公开(公告)号：US20220085150A1

公开(公告)日：2022-03-17

申请号：US17536524

申请日：2021-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyukwoo KWON ,  Ha-young YI ,  Byoungdeog CHOI ,  Seongmin CHOO

IPC: H01L49/02 ,  H01L21/311 ,  H01L27/108

Abstract: A semiconductor device includes a substrate, a bottom electrode on the substrate, a first support layer on the substrate next to a sidewall of the bottom electrode, a dielectric layer covering the sidewall and a top surface of the bottom electrode, and a top electrode on the dielectric layer. The bottom electrode includes a first part having a plurality of protrusions that protrude from a sidewall of the first part. The first part of the bottom electrode may be on the first support layer.

公开(公告)号：US20200027947A1

公开(公告)日：2020-01-23

申请号：US16282548

申请日：2019-02-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyukwoo Kwon ,  Ha-Young YI ,  Byoungdeog CHOI ,  Seongmin CHOO

IPC: H01L49/02 ,  H01L27/108 ,  H01L21/311

Abstract: A semiconductor device includes a substrate, a bottom electrode on the substrate, a first support layer on the substrate next to a sidewall of the bottom electrode, a dielectric layer covering the sidewall and a top surface of the bottom electrode, and a top electrode on the dielectric layer. The bottom electrode includes a first part having a plurality of protrusions that protrude from a sidewall of the first part. The first part of the bottom electrode may be on the first support layer.

公开(公告)号：US20210320015A1

公开(公告)日：2021-10-14

申请号：US17355478

申请日：2021-06-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byoungdeog CHOI ,  Jangseop KIM

IPC: H01L21/56 ,  H01L21/033 ,  H01L21/311

Abstract: A method of fabricating a semiconductor may include forming on a substrate a mold structure including a mold layer, a buffer layer, and a support layer, performing on the mold structure an anisotropic etching process to form a plurality of through holes in the mold structure, and forming a plurality of bottom electrodes in the through holes. The buffer layer has a nitrogen content amount that increases as approaching the support layer from the mold layer. The buffer layer has an oxygen content amount that increases as approaching the mold layer from the support layer.

公开(公告)号：US20210159113A1

公开(公告)日：2021-05-27

申请号：US17144226

申请日：2021-01-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoungdeog CHOI ,  JungWoo SEO ,  Sangyeon HAN ,  Hyun-Woo CHUNG ,  Hongrae KIM ,  Yoosang HWANG

IPC: H01L21/768 ,  H01L23/498 ,  H01L27/22 ,  H01L27/24 ,  H01L45/00 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L27/108

Abstract: A semiconductor device includes a pair of line patterns disposed on a substrate. A contact plug is disposed between the pair of line patterns and an air gap is disposed between the contact plug and the line patterns. A landing pad extends from a top end of the contact plug to cover a first part of the air gap and an insulating layer is disposed on a second part of the air gap, which is not covered by the landing pad.

公开(公告)号：US20200013668A1

公开(公告)日：2020-01-09

申请号：US16577429

申请日：2019-09-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoungdeog CHOI ,  JungWoo SEO ,  Sangyeon HAN ,  Hyun-Woo CHUNG ,  Hongrae KIM ,  Yoosang HWANG

IPC: H01L21/768 ,  H01L23/498 ,  H01L27/22 ,  H01L27/24 ,  H01L45/00 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L27/108

Abstract: A semiconductor device includes bit line structures on a substrate, the bit line structures extending along a first direction and being spaced apart from each other along a second direction perpendicular to the first direction, contact plugs spaced apart from each other along the first direction and being on active regions of the substrate between adjacent bit line structures, a linear spacer on each longitudinal sidewall of a bit line structure, landing pads on the contact plugs, respectively, the landing pads being electrically connected to the contact plugs, respectively, and landing pads that are adjacent to each other along the first direction being offset with respect to each other along the second direction, as viewed in a top view, a conductive pad between each of the contact plugs and a corresponding active region, a vertical axes of the conductive pad and corresponding active region being horizontally offset.

公开(公告)号：US20160362785A1

公开(公告)日：2016-12-15

申请号：US15048995

申请日：2016-02-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongyoung KIM ,  Yongsoon CHOI ,  Honggun KIM ,  Jongmyeong LEE ,  Byoungdeog CHOI

IPC: C23C16/455 ,  C23C16/30

CPC classification number: C23C16/45512 ,  C23C16/30 ,  C23C16/45561 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449

Abstract: An apparatus for manufacturing semiconductor devices having a gas mixer includes a gas supply and a reaction chamber, and the gas supply includes an upper gas mixer, an intermediate gas mixer disposed under the upper gas mixer, a lower gas mixer disposed under the intermediate gas mixer, a first gas supply pipe which is disposed on an upper portion of the upper gas mixer and supplies a first gas to the upper gas mixer, a second gas supply pipe which is disposed on an upper end portion of a side surface of the upper gas mixer and supplies a second gas to the upper gas mixer, and a third gas supply pipe which is disposed on a side surface of the intermediate gas mixer and supplies a third gas to the intermediate gas mixer.

Abstract translation: 一种用于制造具有气体混合器的半导体器件的装置包括气体供应和反应室，并且气体供应包括上部气体混合器，设置在上部气体混合器下方的中间气体混合器，设置在中间气体混合器下方的下部气体混合器 第一气体供给管，其设置在上部气体混合器的上部，并向第一气体混合器供给第一气体;第二气体供给管，其设置在上部气体的侧面的上端部; 混合器并将第二气体供应到上部气体混合器，以及第三气体供应管，其设置在中间混合气体的侧表面上并将第三气体供应到中间气体混合器。