公开(公告)号：US20170345886A1

公开(公告)日：2017-11-30

申请号：US15601186

申请日：2017-05-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ha-young YI ,  Youn-seok CHOI ,  Young-min KO ,  Mun-jun KIM ,  Hong-gun KIM ,  Seung-heon LEE

IPC: H01L49/02 ,  H01L27/108

CPC classification number: H01L28/90 ,  H01L27/10808 ,  H01L27/10814 ,  H01L27/10855 ,  H01L28/87 ,  H01L28/91

Abstract: A semiconductor device includes a plurality of electrode structures formed on a substrate; and an upper supporter group and a lower supporter between upper ends and lower ends of the plurality of electrode structures The upper supporter group includes a plurality of supporters, and at least some of the plurality of supporters each have an upper surface and a lower surface. One of the upper surface and the lower surface has a curved profile, and the other surface has a flat profile.

公开(公告)号：US20210057518A1

公开(公告)日：2021-02-25

申请号：US17094104

申请日：2020-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ha-young YI ,  Youn-seok CHOI ,  Young-min KO ,  Mun-jun KIM ,  Hong-gun KIM ,  Seung-Heon LEE

IPC: H01L49/02 ,  H01L27/108

Abstract: A semiconductor device includes a plurality of electrode structures formed on a substrate; and an upper supporter group and a lower supporter between upper ends and lower ends of the plurality of electrode structures The upper supporter group includes a plurality of supporters, and at least some of the plurality of supporters each have an upper surface and a lower surface. One of the upper surface and the lower surface has a curved profile, and the other surface has a flat profile.

公开(公告)号：US20220085150A1

公开(公告)日：2022-03-17

申请号：US17536524

申请日：2021-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyukwoo KWON ,  Ha-young YI ,  Byoungdeog CHOI ,  Seongmin CHOO

IPC: H01L49/02 ,  H01L21/311 ,  H01L27/108

Abstract: A semiconductor device includes a substrate, a bottom electrode on the substrate, a first support layer on the substrate next to a sidewall of the bottom electrode, a dielectric layer covering the sidewall and a top surface of the bottom electrode, and a top electrode on the dielectric layer. The bottom electrode includes a first part having a plurality of protrusions that protrude from a sidewall of the first part. The first part of the bottom electrode may be on the first support layer.

公开(公告)号：US20190131386A1

公开(公告)日：2019-05-02

申请号：US16229950

申请日：2018-12-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ha-young YI ,  Youn-seok CHOI ,  Young-min KO ,  Mun-jun KIM ,  Hong-gun KIM ,  Seung-heon LEE

IPC: H01L49/02 ,  H01L27/108

Abstract: A semiconductor device includes a plurality of electrode structures formed on a substrate; and an upper supporter group and a lower supporter between upper ends and lower ends of the plurality of electrode structures The upper supporter group includes a plurality of supporters, and at least some of the plurality of supporters each have an upper surface and a lower surface. One of the upper surface and the lower surface has a curved profile, and the other surface has a flat profile.

公开(公告)号：US20200083319A1

公开(公告)日：2020-03-12

申请号：US16679871

申请日：2019-11-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ha-young YI ,  Youn-seok Choi ,  Young-min Ko ,  Mun-jun Kim ,  Hong-gun Kim ,  Seung-heon Lee

IPC: H01L49/02 ,  H01L27/108

Abstract: A semiconductor device includes a plurality of electrode structures formed on a substrate; and an upper supporter group and a lower supporter between upper ends and lower ends of the plurality of electrode structures The upper supporter group includes a plurality of supporters, and at least some of the plurality of supporters each have an upper surface and a lower surface. One of the upper surface and the lower surface has a curved profile, and the other surface has a flat profile.