公开(公告)号：US20220085150A1

公开(公告)日：2022-03-17

申请号：US17536524

申请日：2021-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyukwoo KWON ,  Ha-young YI ,  Byoungdeog CHOI ,  Seongmin CHOO

IPC: H01L49/02 ,  H01L21/311 ,  H01L27/108

Abstract: A semiconductor device includes a substrate, a bottom electrode on the substrate, a first support layer on the substrate next to a sidewall of the bottom electrode, a dielectric layer covering the sidewall and a top surface of the bottom electrode, and a top electrode on the dielectric layer. The bottom electrode includes a first part having a plurality of protrusions that protrude from a sidewall of the first part. The first part of the bottom electrode may be on the first support layer.

公开(公告)号：US20200027947A1

公开(公告)日：2020-01-23

申请号：US16282548

申请日：2019-02-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyukwoo Kwon ,  Ha-Young YI ,  Byoungdeog CHOI ,  Seongmin CHOO

IPC: H01L49/02 ,  H01L27/108 ,  H01L21/311

Abstract: A semiconductor device includes a substrate, a bottom electrode on the substrate, a first support layer on the substrate next to a sidewall of the bottom electrode, a dielectric layer covering the sidewall and a top surface of the bottom electrode, and a top electrode on the dielectric layer. The bottom electrode includes a first part having a plurality of protrusions that protrude from a sidewall of the first part. The first part of the bottom electrode may be on the first support layer.

公开(公告)号：US20200006345A1

公开(公告)日：2020-01-02

申请号：US16257260

申请日：2019-01-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seongmin CHOO ,  Hyukwoo KWON ,  Jangseop KIM

IPC: H01L27/108

Abstract: A semiconductor memory device includes lower electrodes, each of the lower electrodes surrounding an inner space, an upper support layer on top surfaces of the lower electrodes, the upper support layer being on the inner spaces surrounded by the lower electrodes, and an upper electrode on the upper support layer, the upper electrode filling first and second regions, the second region penetrating the upper support layer, and the first region extending from the second region into between the lower electrodes. Each of the lower electrodes includes a first portion overlapping with the first region, a top surface of the first portion being exposed by the upper support layer, and a second portion covered by the upper support layer, a top surface of the second portion being in contact with the upper support layer.