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公开(公告)号:US09698268B2
公开(公告)日:2017-07-04
申请号:US15158859
申请日:2016-05-19
Applicant: Samsung Electronics Co., Ltd.
Inventor: Shigenobu Maeda , Bo-Ram Kim
IPC: H01L21/70 , H01L29/78 , H01L29/66 , H01L29/10 , H01L27/092 , H01L27/108 , H01L27/11 , H01L29/06 , H01L29/267
CPC classification number: H01L29/785 , H01L27/0924 , H01L27/108 , H01L27/11 , H01L29/0649 , H01L29/1054 , H01L29/267 , H01L29/66795 , H01L29/66818
Abstract: Methods of forming a semiconductor device are provided. A method of forming a semiconductor device includes forming a semiconductor layer on a fin, where the fin and the semiconductor layer include first and second semiconductor materials, respectively. Moreover, the method includes defining first and second active fins that include the second semiconductor material, by removing at least a portion of the fin. Related semiconductor devices are also provided.
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公开(公告)号:USD754745S1
公开(公告)日:2016-04-26
申请号:US29470465
申请日:2013-10-22
Applicant: Samsung Electronics Co., Ltd.
Designer: Bo-Ram Kim , Eunyoung You
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公开(公告)号:US20160268416A1
公开(公告)日:2016-09-15
申请号:US15158859
申请日:2016-05-19
Applicant: Samsung Electronics Co., Ltd.
Inventor: Shigenobu Maeda , Bo-Ram Kim
IPC: H01L29/78 , H01L29/267 , H01L27/11 , H01L29/06 , H01L27/092 , H01L27/108
CPC classification number: H01L29/785 , H01L27/0924 , H01L27/108 , H01L27/11 , H01L29/0649 , H01L29/1054 , H01L29/267 , H01L29/66795 , H01L29/66818
Abstract: Methods of forming a semiconductor device are provided. A method of forming a semiconductor device includes forming a semiconductor layer on a fin, where the fin and the semiconductor layer include first and second semiconductor materials, respectively. Moreover, the method includes defining first and second active fins that include the second semiconductor material, by removing at least a portion of the fin. Related semiconductor devices are also provided.
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公开(公告)号:USD752106S1
公开(公告)日:2016-03-22
申请号:US29470453
申请日:2013-10-22
Applicant: Samsung Electronics Co., Ltd.
Designer: Bo-Ram Kim , Eunyoung You
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