Display device
    1.
    发明授权

    公开(公告)号:US11587975B2

    公开(公告)日:2023-02-21

    申请号:US16998470

    申请日:2020-08-20

    Abstract: A display device includes a substrate; a semiconductor layer disposed on the substrate; a gate insulating film disposed on the semiconductor layer; a gate layer disposed on the gate insulating film and insulated from the semiconductor layer; an insulating film disposed on the semiconductor layer and the gate layer; and a metal layer disposed on the insulating film, wherein the semiconductor layer and the gate layer are electrically connected through the metal layer, and the semiconductor layer overlaps the gate layer in a plan view.

    Display device including pixels with driving transistors that have different amounts of unit transistors

    公开(公告)号:US10861385B2

    公开(公告)日:2020-12-08

    申请号:US15155165

    申请日:2016-05-16

    Abstract: A display device includes: a first pixel including a first organic light emitting diode and a first driving transistor for controlling a driving current flowing to the first organic light emitting diode; a second pixel including a second organic light emitting diode and a second driving transistor for controlling a driving current flowing to the second organic light emitting diode; and a third pixel including a third organic light emitting diode and a third driving transistor for controlling a driving current flowing to the third organic light emitting diode, wherein the first driving transistor, the second driving transistor, and the third driving transistor include a different number of unit transistors from one another, and the first pixel, the second pixel, and the third pixel have different colors from one another.

    Thin film transistor array panel and manufacturing method thereof

    公开(公告)号:US10217767B2

    公开(公告)日:2019-02-26

    申请号:US15434150

    申请日:2017-02-16

    Abstract: A thin film transistor array panel includes a substrate and a thin film transistor disposed on a surface of the substrate. The thin film transistor includes a semiconductor, a source electrode, and a drain electrode that are disposed on a same layer as one another. The semiconductor is between the source electrode and the drain electrode. The thin film transistor array panel further includes a buffer layer disposed between the semiconductor and the substrate and including an inorganic insulating material. The first edge of the buffer layer is substantially parallel to an adjacent edge of the semiconductor, a second edge of the buffer layer is substantially parallel to an adjacent edge of the source electrode, and a third edge of the buffer layer is substantially parallel to an adjacent edge of the drain electrode.

    Thin film transistor array panel and manufacturing method thereof

    公开(公告)号:US11362111B2

    公开(公告)日:2022-06-14

    申请号:US16991245

    申请日:2020-08-12

    Abstract: A thin film transistor array panel includes a substrate and a thin film transistor disposed on a surface of the substrate. The thin film transistor includes a semiconductor, a source electrode, and a drain electrode that are disposed on a same layer as one another. The semiconductor is between the source electrode and the drain electrode. The thin film transistor array panel further includes a buffer layer disposed between the semiconductor and the substrate and including an inorganic insulating material. The first edge of the buffer layer is substantially parallel to an adjacent edge of the semiconductor, a second edge of the buffer layer is substantially parallel to an adjacent edge of the source electrode, and a third edge of the buffer layer is substantially parallel to an adjacent edge of the drain electrode.

    Organic light emitting diode display and manufacturing method thereof

    公开(公告)号:US10347705B2

    公开(公告)日:2019-07-09

    申请号:US15251678

    申请日:2016-08-30

    Abstract: An organic light emitting diode display, includes a substrate; a thin film transistor and a storage capacitor that are disposed and spaced apart from each other on the substrate; and an organic light emitting diode that is connected to the thin film transistor. The storage capacitor includes a capacitor lower electrode, a capacitor insulating layer disposed on the capacitor lower electrode, and a capacitor upper electrode disposed on the capacitor insulating layer. The capacitor lower electrode is a conducting oxide semiconductor into which hydrogen has diffused.

    DISPLAY DEVICE
    8.
    发明申请
    DISPLAY DEVICE 审中-公开
    显示设备

    公开(公告)号:US20170047003A1

    公开(公告)日:2017-02-16

    申请号:US15155165

    申请日:2016-05-16

    Abstract: A display device includes: a first pixel including a first organic light emitting diode and a first driving transistor for controlling a driving current flowing to the first organic light emitting diode; a second pixel including a second organic light emitting diode and a second driving transistor for controlling a driving current flowing to the second organic light emitting diode; and a third pixel including a third organic light emitting diode and a third driving transistor for controlling a driving current flowing to the third organic light emitting diode, wherein the first driving transistor, the second driving transistor, and the third driving transistor include a different number of unit transistors from one another, and the first pixel, the second pixel, and the third pixel have different colors from one another.

    Abstract translation: 显示装置包括:包括第一有机发光二极管的第一像素和用于控制流向第一有机发光二极管的驱动电流的第一驱动晶体管; 包括第二有机发光二极管的第二像素和用于控制流向第二有机发光二极管的驱动电流的第二驱动晶体管; 以及包括第三有机发光二极管的第三像素和用于控制流向第三有机发光二极管的驱动电流的第三驱动晶体管,其中第一驱动晶体管,第二驱动晶体管和第三驱动晶体管包括不同数目 的单位晶体管,并且第一像素,第二像素和第三像素具有彼此不同的颜色。

    Thin film transistor array panel and manufacturing method thereof

    公开(公告)号:US10748936B2

    公开(公告)日:2020-08-18

    申请号:US16232244

    申请日:2018-12-26

    Abstract: A thin film transistor array panel includes a substrate and a thin film transistor disposed on a surface of the substrate. The thin film transistor includes a semiconductor, a source electrode, and a drain electrode that are disposed on a same layer as one another. The semiconductor is between the source electrode and the drain electrode. The thin film transistor array panel further includes a buffer layer disposed between the semiconductor and the substrate and including an inorganic insulating material. The first edge of the buffer layer is substantially parallel to an adjacent edge of the semiconductor, a second edge of the buffer layer is substantially parallel to an adjacent edge of the source electrode, and a third edge of the buffer layer is substantially parallel to an adjacent edge of the drain electrode.

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