公开(公告)号：US20130328042A1

公开(公告)日：2013-12-12

申请号：US13679910

申请日：2012-11-16

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Doo Hyoung LEE ,  Chan Woo YANG ,  Seung-Ho JUNG ,  Doo Na KIM ,  Bo Sung KIM ,  Eun Hye PARK ,  June Whan CHOI

IPC: H01L29/786 ,  H01B1/06 ,  H01L29/66

CPC classification number: H01L29/66969 ,  H01B1/06 ,  H01L21/02565 ,  H01L21/02628 ,  H01L29/7869

Abstract: A thin film transistor substrate according to an exemplary embodiment of the present invention includes a semiconductor layer including metal disposed on an insulating substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode overlapping the semiconductor layer, wherein the metal in the semiconductor layer comprises indium (In), zinc (Zn), and tin (Sn), and a molar ratio (R, R[mol %]=[In]/[In+Zn+Sn]/100) of indium (In) to the metals in the semiconductor layer is less than about 20%, and more specifically, the molar ratio (R, R[mol %]=[In]/[In+Zn+Sn]/100) of indium (In) of the metals in the semiconductor layer is about 5% to about 13%.

Abstract translation: 根据本发明的示例性实施例的薄膜晶体管基板包括：半导体层，包括设置在绝缘基板上的金属，与半导体层重叠的栅极电极以及与半导体层重叠的源电极和漏电极，其中金属 在半导体层中包含铟（In），锌（Zn）和锡（Sn），并且铟的摩尔比（R，R [mol％] = [In] / [In + Zn + Sn] / 100） （In）/ [In + Zn + Sn] / 100）的摩尔比（R，R [mol％] = [In] / [In + Zn + Sn] / 100）小于约20％ In）的半导体层中的金属为约5％至约13％。

公开(公告)号：US20190088752A1

公开(公告)日：2019-03-21

申请号：US16192802

申请日：2018-11-16

Applicant: Samsung Display Co., Ltd.

Inventor： Chan Woo YANG ,  Hyune Ok SHIN ,  Chang Oh JEONG ,  Su Kyoung YANG ,  Dong Min LEE

IPC: H01L29/417 ,  H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L29/45 ,  C22C29/12

Abstract: A thin film transistor includes a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 Å or more to 144 ∈ or less.

公开(公告)号：US20160293633A1

公开(公告)日：2016-10-06

申请号：US14926416

申请日：2015-10-29

Applicant: Samsung Display Co., Ltd.

Inventor： Chan Woo YANG ,  Hyun Eok SHIN ,  Su Kyoung YANG ,  Dong Min LEE

IPC: H01L27/12 ,  G02F1/1368 ,  G02F1/1362 ,  H01L29/786

CPC classification number: H01L27/124 ,  H01L27/1225 ,  H01L27/1262 ,  H01L27/1288 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin-film transistor array panel includes a gate line disposed on a first substrate, the gate line including a gate electrode, a semiconductor layer disposed on the first substrate, the semiconductor layer including an oxide semiconductor, a data wire layer disposed on the first substrate, the data wire layer including a data line crossing the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode, a capping layer disposed on the data wire layer, a tilt layer disposed on the capping layer, and a passivation layer disposed on the tilt layer, in which the tilt layer includes a silsesquioxane-based copolymer.

Abstract translation: 薄膜晶体管阵列面板包括设置在第一基板上的栅极线，栅极线包括栅电极，设置在第一基板上的半导体层，包括氧化物半导体的半导体层，设置在第一基板上的数据线层 基板，包括与栅极线交叉的数据线的数据线层，连接到数据线的源电极和面对源电极的漏电极，设置在数据线层上的覆盖层，设置在封盖上的倾斜层 层和设置在倾斜层上的钝化层，其中倾斜层包括倍半硅氧烷基共聚物。

公开(公告)号：US20210057532A1

公开(公告)日：2021-02-25

申请号：US17088779

申请日：2020-11-04

Applicant: Samsung Display Co., Ltd.

Inventor： Chan Woo YANG ,  Hyune OK SHIN ,  Chang Oh JEONG ,  Su Kyoung Yang ,  Dong Min LEE

IPC: H01L29/417 ,  H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L29/45

Abstract: A thin film transistor including a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 Å or more to 144 Å or less.

公开(公告)号：US20170358764A1

公开(公告)日：2017-12-14

申请号：US15595119

申请日：2017-05-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hyun Eok SHIN ,  Joon Yong PARK ,  Chan Woo YANG ,  Dong Min LEE ,  Ju Hyun LEE

IPC: H01L51/05 ,  G09G3/3233 ,  H01L51/52

CPC classification number: G09G3/3233 ,  G09G2300/0439 ,  G09G2320/043 ,  H01L51/5203 ,  H01L51/5271

Abstract: A display device includes a reflective layer on a first electrode, the reflective layer including silver or a silver alloy, an inorganic layer on the reflective layer, the inorganic layer having a work function that is lower than that of the reflective layer, an emission layer on the inorganic layer, an organic layer on the emission layer, and a second electrode on the organic layer.

公开(公告)号：US20160149161A1

公开(公告)日：2016-05-26

申请号：US14698265

申请日：2015-04-28

Applicant: Samsung Display Co., Ltd.

Inventor： Dong Min LEE ,  Hyun Eok SHIN ,  Chan Woo YANG ,  Su Kyoung YANG

IPC: H01L51/52 ,  H01L27/32 ,  H01L51/56

CPC classification number: H01L51/5271 ,  H01L51/5265 ,  H01L2251/301 ,  H01L2251/558

Abstract: An organic light-emitting diode (OLED) display device includes a substrate; a transistor device disposed on the substrate; a first electrode electrically connected to the transistor device; an organic light-emitting layer disposed on the first electrode; and a second electrode disposed on the organic light-emitting layer. The OLED display device further includes a transflective layer contacting a lower surface of the first electrode and having a relatively higher refractive index than the first electrode.

Abstract translation: 有机发光二极管（OLED）显示装置包括：基板; 设置在所述基板上的晶体管器件; 电连接到所述晶体管器件的第一电极; 设置在所述第一电极上的有机发光层; 以及设置在有机发光层上的第二电极。 OLED显示装置还包括与第一电极的下表面接触且具有比第一电极相对更高的折射率的透反射层。

公开(公告)号：US20180314107A1

公开(公告)日：2018-11-01

申请号：US15847633

申请日：2017-12-19

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Yong PARK ,  Gyung Min BAEK ,  Hyun Eok SHIN ,  Sang Won SHIN ,  Chan Woo YANG ,  Ju Hyun LEE

IPC: G02F1/1335 ,  G02F1/1368

Abstract: An exemplary embodiment provides a color conversion display panel including: a substrate including a display area and a light-blocking area; a metal oxide layer disposed on the substrate to overlap the display area and the light-blocking area; a reflective metal layer disposed on the metal oxide layer to overlap the light-blocking area; a color conversion layer disposed on the metal oxide layer which overlaps the display area to include semiconductor nanocrystals; and a transmission layer disposed on the metal oxide layer which overlaps the display area.

公开(公告)号：US20170153372A1

公开(公告)日：2017-06-01

申请号：US15184255

申请日：2016-06-16

Applicant: Samsung Display Co. Ltd.

Inventor： Su Kyoung YANG ,  Moon Jung AN ,  Chan Woo YANG ,  Dong Min LEE ,  Ju Hyun LEE ,  Gug Rae JO

IPC: G02B5/30 ,  C23C14/08 ,  C23C14/34 ,  C23C14/04

CPC classification number: G02B5/3058 ,  C23C14/0042 ,  C23C14/042 ,  C23C14/08 ,  C23C14/081 ,  C23C14/083 ,  C23C14/085 ,  C23C14/087 ,  C23C14/10 ,  C23C14/205 ,  C23C14/3457

Abstract: A wire grid polarizer plate includes a transparent substrate, metal partition walls and metal oxide partition walls. The metal partition walls are disposed on the transparent substrate and spaced apart from one another. The metal partition walls includes at least one metal selected from aluminum (Al), titan (Ti), molybdenum (Mo), chrome (Cr), silver (Ag), copper (Cu), nickel (Ni) and cobalt (Co). The metal oxide partition walls are disposed on the metal partition walls. The metal oxide partition walls includes an oxide of the at least one metal. An average of surface roughness of the wire grid polarizer plate is about 4 nm or less when a thickness of the metal oxide partition walls is equal to about 300 Å.

公开(公告)号：US20170117298A1

公开(公告)日：2017-04-27

申请号：US15264490

申请日：2016-09-13

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Gwang Min CHA ,  Su Kyoung YANG ,  Chan Woo YANG

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/786 ,  H01L29/45 ,  H01L29/423 ,  H01L21/4763 ,  H01L21/02 ,  H01L23/532 ,  H01L29/66

CPC classification number: H01L27/124 ,  H01L21/0206 ,  H01L21/02175 ,  H01L21/02244 ,  H01L21/47635 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L27/1225 ,  H01L27/1259 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: A display device and a method of manufacturing the display device are provided. According to an exemplary embodiment, a display device includes: a substrate; a gate electrode disposed on the substrate; a semiconductor pattern disposed on the gate electrode; data wiring disposed on the semiconductor pattern and having a data line, a source electrode, and a drain electrode; a first barrier layer disposed between the data wiring and the semiconductor pattern; and undercuts disposed on at least one side of each segment of the first barrier layer.

公开(公告)号：US20160293635A1

公开(公告)日：2016-10-06

申请号：US14984638

申请日：2015-12-30

Applicant: Samsung Display Co., Ltd.

Inventor： Chang Oh JEONG ,  Hyun Eok SHIN ,  Su Kyoung YANG ,  Chan Woo YANG ,  Dong Min LEE

IPC: H01L27/12 ,  H01L51/52 ,  G02F1/1343 ,  H01L29/423 ,  G02F1/1368 ,  H01L27/32 ,  H01L51/00

CPC classification number: H01L27/124 ,  G02F2001/13629 ,  H01L27/1259 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/42384 ,  H01L29/4908 ,  H01L51/5281 ,  H01L2251/306

Abstract: A display device includes a gate line, a data line crossing the gate line, and a first transistor including a gate electrode electrically coupled to the gate line and a first electrode electrically coupled to the data line. At least one of the gate electrode of the first transistor, the first electrode of the first transistor, and a second electrode of the first transistor includes at least one of a first conductor layer and a second conductor layer. The first conductor layer includes a first metal layer and a second metal layer disposed on the first metal layer. The second conductor layer includes a third metal layer and a fourth metal layer disposed on the third metal layer. The second metal layer has a lower reflectivity than the first metal layer. The fourth metal layer has a lower reflectivity lower than the third metal layer.

Abstract translation: 显示装置包括栅极线，与栅极线交叉的数据线，以及包括电耦合到栅极线的栅电极的第一晶体管和与数据线电耦合的第一电极。 第一晶体管的栅电极，第一晶体管的第一电极和第一晶体管的第二电极中的至少一个包括第一导体层和第二导体层中的至少一个。 第一导体层包括设置在第一金属层上的第一金属层和第二金属层。 第二导体层包括设置在第三金属层上的第三金属层和第四金属层。 第二金属层的反射率比第一金属层低。 第四金属层的反射率比第三金属层低。