公开(公告)号：US20210057532A1

公开(公告)日：2021-02-25

申请号：US17088779

申请日：2020-11-04

Applicant: Samsung Display Co., Ltd.

Inventor： Chan Woo YANG ,  Hyune OK SHIN ,  Chang Oh JEONG ,  Su Kyoung Yang ,  Dong Min LEE

IPC: H01L29/417 ,  H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L29/45

Abstract: A thin film transistor including a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 Å or more to 144 Å or less.