公开(公告)号：US09570616B2

公开(公告)日：2017-02-14

申请号：US15069043

申请日：2016-03-14

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yungbin Chung ,  Seungkyeng Cho ,  Chulhyun Baek ,  Injun Choi ,  Bogeon Jeon ,  Eunjeong Cho ,  Sunghoon Yang

IPC: H01L29/786 ,  H01L23/29 ,  H01L23/31 ,  H01L27/32 ,  H01L29/66 ,  H01L21/02 ,  H01L27/12 ,  G02F1/1343 ,  G02F1/1368 ,  G02F1/1341

CPC classification number: H01L29/78606 ,  G02F1/133345 ,  G02F1/1341 ,  G02F1/134309 ,  G02F1/1368 ,  H01L21/0217 ,  H01L23/291 ,  H01L23/3171 ,  H01L27/1248 ,  H01L27/1262 ,  H01L27/322 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/66765 ,  H01L29/78669

Abstract: A display device includes: a first substrate; a gate electrode on the first substrate; a gate insulating layer on the gate electrode; a semiconductor layer on the gate insulating layer; a source electrode and a drain electrode spaced apart from each other on the semiconductor layer; a first passivation layer including a silicon nitride-based material and on the semiconductor layer, the source electrode, and the drain electrode; a second passivation layer including a silicon nitride-based material and on the first passivation layer; and a third passivation layer including a silicon nitride-based material and on the second passivation layer, where a content ratio of silicon in the first passivation layer is higher than a content ratio of silicon in the second passivation layer, and the content ratio of silicon in the second passivation layer is higher than a content ratio of silicon in the third passivation layer.

Abstract translation: 一种显示装置，包括：第一基板; 第一基板上的栅电极; 栅电极上的栅极绝缘层; 栅极绝缘层上的半导体层; 在半导体层上彼此隔开的源电极和漏电极; 包括氮化硅基材料的第一钝化层，在所述半导体层上，所述源电极和所述漏电极; 包括氮化硅基材料的第二钝化层和在所述第一钝化层上; 以及包括氮化硅基材料的第三钝化层，并且在所述第二钝化层上，其中所述第一钝化层中的硅的含量比率高于所述第二钝化层中的硅的含量比，并且所述硅的含量比 在第二钝化层中比第三钝化层中的硅的含量比高。

公开(公告)号：US20240319831A1

公开(公告)日：2024-09-26

申请号：US18506026

申请日：2023-11-09

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Dongmin Lee ,  Joonyong Park ,  Joonwoo Bae ,  Hyuneok Shin ,  Samtae Jeong ,  Yungbin Chung

IPC: G06F3/044 ,  G06F3/041 ,  H10K59/40

CPC classification number: G06F3/0445 ,  G06F3/0412 ,  H10K59/40 ,  G06F2203/04103 ,  G06F2203/04111

Abstract: A display apparatus includes a first insulating layer, a conductive pattern disposed directly on the first insulating layer, a cladding pattern disposed on side surfaces of the conductive pattern, and a second insulating layer on the conductive pattern and the cladding pattern, wherein the cladding pattern includes a first cladding layer including a first material and a second cladding layer including a second material different from the first material.

公开(公告)号：US11189671B2

公开(公告)日：2021-11-30

申请号：US16124067

申请日：2018-09-06

Applicant: Samsung Display Co., Ltd.

Inventor： Yungbin Chung ,  Sangwook Lee ,  Myunghan Lee ,  Hwa-su Lim ,  Seongkweon Heo

IPC: H01L51/52 ,  H01L27/32 ,  G06F3/041 ,  G02B5/28 ,  G02B5/20

Abstract: A display device may include at least one optical control unit including first refractive index layers, second refractive index layers, and an optical compensation layer. The second refractive index layers may be stacked in an alternating manner with the first refractive index layers and may have a refractive index different from that of the first refractive index layers. The optical compensation layer may be disposed at least on the uppermost refractive index layer of the first and second refractive index layers to be in contact with the uppermost refractive index layer or below the lowermost refractive index layer of the first and second refractive index layers to be in contact with the lowermost refractive index layer. The optical compensation layer may have a thickness less than those of the first and second refractive index layers.

公开(公告)号：US11864411B2

公开(公告)日：2024-01-02

申请号：US17092568

申请日：2020-11-09

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yungbin Chung ,  Sanggun Choi ,  Yeoungkeol Woo ,  Myounggeun Cha ,  Eunjin Kwak

IPC: H10K50/844 ,  H01L29/786 ,  H10K71/00

CPC classification number: H10K50/844 ,  H01L29/786 ,  H10K71/00

Abstract: A display apparatus includes a first substrate, a main pixel circuit located on the first substrate and including a first semiconductor layer, an auxiliary pixel circuit located on the first substrate and including a second semiconductor layer, a buffer layer located between the first substrate and the first semiconductor layer and between the first substrate and the second semiconductor layer, and a barrier layer located between the first substrate and the buffer layer, including one material from among silicon nitride (SiNx), aluminum oxide (Al2O3), and zirconium oxide (Zr2O3), and having a density ranging from about 2 g/cm3 to about 6 g/cm3.

公开(公告)号：US20230172040A1

公开(公告)日：2023-06-01

申请号：US17939360

申请日：2022-09-07

Applicant: Samsung Display Co., Ltd.

Inventor： Yungbin Chung ,  Eunjin Kwak ,  Jihye Han ,  Chulmin Bae ,  Sangwook Lee

IPC: H01L51/00 ,  H01L27/32 ,  H01L51/56 ,  C23C16/40 ,  C23C16/50

CPC classification number: H01L51/003 ,  H01L27/3244 ,  H01L51/0097 ,  H01L51/56 ,  C23C16/401 ,  C23C16/50 ,  H01L2227/326 ,  H01L2251/5338

Abstract: Provided are a display apparatus, which may be easily separated from a carrier substrate, and a method of manufacturing the same. The method of manufacturing a display apparatus includes: forming, on a carrier substrate, a first inorganic layer including silicon oxide; plasma-treating the first inorganic layer by using nitrous oxide gas; after the plasma-treating, forming a display substrate on the first inorganic layer; forming a display element layer above the display substrate; and separating the display substrate from the carrier substrate.

公开(公告)号：US20210320278A1

公开(公告)日：2021-10-14

申请号：US17092568

申请日：2020-11-09

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yungbin Chung ,  Sanggun Choi ,  Yeoungkeol Woo ,  Myounggeun Cha ,  Eunjin Kwak

IPC: H01L51/52 ,  H01L51/56 ,  H01L29/786

Abstract: A display apparatus includes a first substrate, a main pixel circuit located on the first substrate and including a first semiconductor layer, an auxiliary pixel circuit located on the first substrate and including a second semiconductor layer, a buffer layer located between the first substrate and the first semiconductor layer and between the first substrate and the second semiconductor layer, and a barrier layer located between the first substrate and the buffer layer, including one material from among silicon nitride (SiNx), aluminum oxide (Al2O3), and zirconium oxide (Zr2O3), and having a density ranging from about 2 g/cm3 to about 6 g/cm3.

公开(公告)号：US10101627B2

公开(公告)日：2018-10-16

申请号：US15360736

申请日：2016-11-23

Applicant: Samsung Display Co., Ltd.

Inventor： Taeyoung Ahn ,  Bogeon Jeon ,  Wooseok Jeon ,  Yungbin Chung ,  Eunjeong Cho

IPC: H01L29/49 ,  G02F1/1368 ,  H01L21/027 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  G02F1/136 ,  G02F1/1362

Abstract: A liquid crystal display (LCD) device capable of preventing impurities from permeating into a channel area of a switching element, the LCD device including: a gate electrode above a substrate; a semiconductor layer which overlaps the gate electrode; a drain electrode and a source electrode which overlap the semiconductor layer; an ohmic contact layer between the semiconductor layer and the drain electrode and between the semiconductor layer and the source electrode; a pixel electrode which is connected to one of the drain electrode and the source electrode; and a gate insulating layer between the gate electrode and the semiconductor layer, the gate insulating layer comprising fluorine. A concentration of the fluorine is decreasing, as the fluorine of the gate insulating layer being more adjacent to the substrate.

公开(公告)号：US20240322077A1

公开(公告)日：2024-09-26

申请号：US18602289

申请日：2024-03-12

Applicant: Samsung Display Co., Ltd.

Inventor： Hyuneok Shin ,  Sungjoo Kwon ,  Juhyun Lee ,  Yangho Jung ,  Yungbin Chung ,  Yugwang Jeong

IPC: H01L33/24 ,  H01L25/075

CPC classification number: H01L33/24 ,  H01L25/0753

Abstract: A display apparatus includes a display panel including a display area, multiple first partitions disposed on the display panel in the display area, and a first auxiliary layer arranged on at least a portion of outer surfaces of the first partitions and including an opening arranged between adjacent first partitions.

公开(公告)号：US11658190B2

公开(公告)日：2023-05-23

申请号：US17134585

申请日：2020-12-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yungbin Chung ,  Yeoungkeol Woo ,  Eunjin Kwak

IPC: H01L27/12 ,  H01L27/15 ,  H01L51/00 ,  H01L51/52 ,  H01L27/32 ,  H01L25/16

CPC classification number: H01L27/1262 ,  H01L27/124 ,  H01L27/1237 ,  H01L27/3244 ,  H01L25/167 ,  H01L27/1248 ,  H01L27/15

Abstract: A display apparatus includes a substrate. A first buffer layer is disposed over the substrate. The first buffer layer includes silicon nitride and has an atomic percentage of hydrogen bonded to silicon of about 0.36 to about 1.01. A thin film transistor is disposed over the first buffer layer. The thin film transistor includes an active layer. A display element is electrically connected to the thin film transistor.

公开(公告)号：US10444586B2

公开(公告)日：2019-10-15

申请号：US16129503

申请日：2018-09-12

Applicant: Samsung Display Co., Ltd.

Inventor： Taeyoung Ahn ,  Bogeon Jeon ,  Wooseok Jeon ,  Yungbin Chung ,  Eunjeong Cho

IPC: H01L27/12 ,  G02F1/1368 ,  H01L21/027 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786 ,  G02F1/136 ,  G02F1/1362

Abstract: A liquid crystal display (LCD) device capable of perventing impurities from permeating into a channel area of a switching element, the LCD device including: a gate electrode above a substrate; a semiconductor layer which overlaps the gate electrode; a drain electrode and a source electrode which overlap the semiconductor layer; an ohmic contact layer between the semiconductor layer and the drain electrode and between the semiconductor layer and the source electrode; a pixel electrode which is connected to one of the drain electrode and the source electrode; and a gate insulating layer between the gate electrode and the semiconductor layer, the gate insulating layer comprising fluorine. A concentration of the fluorine is decreasing, as the fluorine of the gate insulating layer being more adjacent to the substrate.