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1.发明申请公开(公告)号：US20150340417A1
公开(公告)日：2015-11-26
申请号：US14815327
申请日：2015-07-31
Applicant: Samsung Display Co., Ltd.
Inventor： Hyun-Joong CHUNG , Jin-Seong PARK , Jong-Han JEONG , Jae-Kyeong JEONG , Yeon-Gon MO , Min-Kyu KIM , Tae-Kyung AHN , Hui-Won YANG , Kwang-Suk KIM , Eun-Hyun KIM , Jae-Wook KANG , Jang-Soon IM
IPC: H01L27/32 , H01L29/786 , H01L29/66 , H01L51/56
CPC classification number: H01L27/3248 , H01L27/1225 , H01L27/3258 , H01L27/3262 , H01L29/66969 , H01L29/7869 , H01L51/52 , H01L51/5237 , H01L51/56 , H01L2227/323 , H01L2251/5346
Abstract: An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer.
Abstract translation: 公开了一种有机发光显示装置，其可被配置为防止水分或氧气从外部穿透有机发光显示装置。 进一步公开了易于应用于大型显示装置和/或可容易地批量生产的有机发光显示装置。 另外公开了一种制造有机发光显示装置的方法。 有机发光显示装置可以包括例如薄膜晶体管（TFT），其包括栅电极，与栅电极绝缘的有源层，与栅电极绝缘的源电极和漏电极，并与活性层接触和 设置在所述源极和漏极之间的绝缘层和所述有源层; 以及与TFT电连接的有机发光二极管。 绝缘层可以包括例如与活性层接触的第一绝缘层; 以及由金属氧化物形成并设置在第一绝缘层上的第二绝缘层。
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2.发明申请THIN FILM TRANSISTOR, THIN FILM TRANSISTOR SUBSTRATE, DISPLAY APPARATUS AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR 有权薄膜晶体管，薄膜晶体管基板，显示装置及制造薄膜晶体管的方法公开(公告)号：US20150255278A1
公开(公告)日：2015-09-10
申请号：US14478273
申请日：2014-09-05
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Byung-Du AHN , Tae-Young KIM , Yeon-Gon MO
IPC: H01L21/02 , G02F1/1368 , H01L27/32 , H01L29/786 , H01L29/66
CPC classification number: H01L21/02472 , G02F1/1368 , H01L21/02441 , H01L27/1225 , H01L27/1248 , H01L27/3248 , H01L29/66969 , H01L29/78606 , H01L29/7869
Abstract: A thin film transistor including a gate electrode; an active layer insulated from the gate electrode; a source electrode and a drain electrode that are insulated from the gate electrode and are electrically connected to the active layer; a first etch stopper layer that is formed of an insulation material and contacts a portion of the active layer located between areas of the active layer that are electrically connected to the source electrode and the drain electrode; a second etch stopper layer on the first etch stopper layer, the second etch stopper layer being formed of an insulation material of a same type as the insulation material used to form the first etch stopper layer, the second etch stopper layer having a higher density than the first etch stopper layer; and a third etch stopper layer on the second etch stopper layer.
Abstract translation: 一种薄膜晶体管，包括栅电极; 与栅电极绝缘的有源层; 源电极和漏电极，与栅电极绝缘并且电连接到有源层; 第一蚀刻停止层，其由绝缘材料形成并且与位于有源层的与源电极和漏电极电连接的区域之间的有源层的一部分接触; 在第一蚀刻停止层上的第二蚀刻停止层，第二蚀刻停止层由与用于形成第一蚀刻停止层的绝缘材料相同类型的绝缘材料形成，第二蚀刻停止层的密度高于 第一蚀刻停止层; 以及第二蚀刻停止层上的第三蚀刻停止层。
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3.发明申请METHODS OF FORMING OXIDE SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING DISPLAY DEVICES HAVING OXIDE SEMICONDUCTOR DEVICES 有权形成氧化物半导体器件的方法和制造具有氧化物半导体器件的显示器件的方法公开(公告)号：US20150140699A1
公开(公告)日：2015-05-21
申请号：US14455805
申请日：2014-08-08
Inventor： Yeon-Hong Kim , Byung-Du AHN , Hyeon-Sik KIM , Yeon-Gon MO , Ji-Hun LIM , Hyun-Jae KIM
CPC classification number: H01L21/02664 , H01L21/02422 , H01L21/02488 , H01L21/02554 , H01L21/02565 , H01L2227/323
Abstract: A method of forming an oxide semiconductor device may be provided. In the method, a substrate comprising a first major surface and a second major surface that faces away from the first major surface may be provided. An oxide semiconductor device may be formed over the first major surface to provide an intermediate device, and the semiconductor device may comprise an oxide active layer. The intermediate device may be subjected to ultraviolet (UV) light (e.g., ultraviolet ray irradiation process) for a first period, and subjected to heat (e.g., thermal treatment process) for a second period. The first and second periods may at least partly overlap.
Abstract translation: 可以提供形成氧化物半导体器件的方法。 在该方法中，可以提供包括第一主表面和远离第一主表面的第二主表面的基板。 可以在第一主表面上形成氧化物半导体器件以提供中间器件，并且半导体器件可以包括氧化物有源层。 中间装置可以经受第一阶段的紫外线（UV）光（例如紫外线照射处理），并进行第二时段的加热（例如热处理）。 第一和第二周期可以至少部分重叠。
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公开(公告)号：US20150145840A1
公开(公告)日：2015-05-28
申请号：US14548124
申请日：2014-11-19
Applicant: Samsung Display Co., Ltd.
Inventor： Ji-Hun LIM , Hyeon-Sik KIM , Yeon-Gon MO , Byung-Du AHN , Hyang-Shik KONG
IPC: G09G3/36 , H01L27/12 , G06F3/041 , H01L31/103 , H01L29/786 , H01L31/032 , G06F3/042 , H01L27/144
CPC classification number: G09G3/3607 , G06F3/0412 , G06F3/042 , G09G3/02 , G09G3/3648 , G09G2300/0809 , G09G2360/141 , G09G2360/142 , G09G2360/144 , G09G2360/145 , H01L27/1225 , H01L27/1251 , H01L27/1446 , H01L29/7869
Abstract: A pixel circuit and a display device having the pixel circuit are disclosed. One inventive aspect includes a switching thin-film TFT and a light sensing TFT. The switching thin-film TFT includes a first source electrode electrically connected to a data line. A first gate electrode of the switching thin-film TFT and a second source electrode of the light sensing TFT are electrically connected to a first gate line. A first drain electrode of the switching thin-film TFT and a second drain electrode of the light sensing TFT are electrically connected to a pixel electrode.
Abstract translation: 公开了具有像素电路的像素电路和显示装置。 本发明的一个方面包括开关薄膜TFT和感光TFT。 开关薄膜TFT包括与数据线电连接的第一源电极。 开关薄膜TFT的第一栅电极和感光TFT的第二源电极电连接到第一栅极线。 开关薄膜TFT的第一漏电极和感光TFT的第二漏极电连接到像素电极。
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Patent Agency Ranking
公开(公告)号：US20150064839A1
公开(公告)日：2015-03-05
申请号：US14333744
申请日：2014-07-17
Inventor： Chaun-Gi CHOI , Yeon-Gon MO , Hyun-Jae KIM , Hyun-Soo LIM , Si-Joon KIM , Tae-Soo JUNG , You-Seung RIM
CPC classification number: H01L29/24 , H01L21/02565 , H01L21/02628 , H01L29/66969 , H01L29/78693
Abstract: A method of forming a tin oxide semiconductor thin film includes preparing a precursor solution including a tin oxide semiconductor, coating the precursor solution on a substrate; and performing a heat treatment on the substrate coated with the precursor solution. A tin compound having a different tin valence according to a semiconductor type of the tin oxide semiconductor may be used in the precursor solution.
Abstract translation: 形成氧化锡半导体薄膜的方法包括制备包含氧化锡半导体的前体溶液，将前体溶液涂覆在基板上; 并在涂覆有前体溶液的基材上进行热处理。 可以在前体溶液中使用根据氧化锡半导体的半导体类型具有不同锡价的锡化合物。
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6.发明申请COMPOSITION FOR TIN OXIDE SEMICONDUCTOR AND METHOD OF FORMATION OF TIN OXIDE SEMICONDUCTOR THIN FILM 有权氧化锡半导体的组成及形成氧化锡半导体薄膜的方法公开(公告)号：US20150011044A1
公开(公告)日：2015-01-08
申请号：US14097685
申请日：2013-12-05
Inventor： Chaun-Gi CHOI , Yeon-Gon MO , Hyun-Jae KIM , Hyun-Soo LIM , Si-Joon KIM , Tae-Soo JUNG , You-Seung RIM
IPC: H01L21/02
CPC classification number: H01L21/02565 , H01L21/02628
Abstract: Provided is a composition for forming tin oxide semiconductor including a tin precursor compound, an antimony precursor compound, and a solvent, according to an aspect of the present disclosure. Also provided is a method of forming a tin oxide semiconductor thin film. The method includes preparing a composition including a tin precursor compound and an antimony precursor compound dissolved in a solvent; disposing the composition on a substrate; and performing a heat treatment on the substrate coated with the composition.
Abstract translation: 提供根据本公开的一个方面的用于形成包含锡前体化合物，锑前体化合物和溶剂的氧化锡半导体的组合物。 还提供了形成氧化锡半导体薄膜的方法。 该方法包括制备包含溶解在溶剂中的锡前体化合物和锑前体化合物的组合物; 将组合物置于基材上; 并在涂覆有该组合物的基材上进行热处理。
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公开(公告)号：US20130341614A1
公开(公告)日：2013-12-26
申请号：US14010164
申请日：2013-08-26
Applicant: Samsung Display Co., Ltd.
Inventor： Hyun-Joong CHUNG , Jin-Seong PARK , Jong-Han JEONG , Jae-Kyeong JEONG , Yeon-Gon MO , Min-Kyu KIM , Tae-Kyung AHN , Hui-Won YANG , Kwang-Suk KIM , Eun-Hyun KIM , Jae-Wook KANG , Jae-Soon IM
IPC: H01L51/52
CPC classification number: H01L27/3248 , H01L27/1225 , H01L27/3258 , H01L27/3262 , H01L29/66969 , H01L29/7869 , H01L51/52 , H01L51/5237 , H01L51/56 , H01L2227/323 , H01L2251/5346
Abstract: An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer.
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8.发明申请公开(公告)号：US20130240879A1
公开(公告)日：2013-09-19
申请号：US13889752
申请日：2013-05-08
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Min-Kyu KIM , Jong-Han JEONG , Tae-kyung AHN , Jae-Kyeong JEONG , Yeon-Gon MO , Jin-Seong PARK , Hyun-Joong CHUNG , Kwang-Suk KIM , Hui-Won YANG
IPC: H01L29/786
CPC classification number: H01L29/7869 , H01L29/78606
Abstract: A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.
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公开(公告)号：US20130109119A1
公开(公告)日：2013-05-02
申请号：US13678256
申请日：2012-11-15
Applicant: Samsung Display Co., Ltd.
Inventor： Hyun-Joong CHUNG , Jin-Seong PARK , Jong-Han JEONG , Jae-Kyeong JEONG , Yeon-Gon MO , Min-Kyu KIM , Tae-Kyung AHN , Hui-Won YANG , Kwang-Suk KIM , Eun-Hyun KIM , Jae-Wook KANG , Jae-Soon IM
IPC: H01L51/56
CPC classification number: H01L27/3248 , H01L27/1225 , H01L27/3258 , H01L27/3262 , H01L29/66969 , H01L29/7869 , H01L51/52 , H01L51/5237 , H01L51/56 , H01L2227/323 , H01L2251/5346
Abstract: An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer.
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