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    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
    1.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES 审中-公开
    半导体器件及制造半导体器件的方法

    公开(公告)号：US20160118503A1

    公开(公告)日：2016-04-28

    申请号：US14842540

    申请日：2015-09-01

    Applicant: Samsung Display Co., Ltd.

    Inventor： Je-Hun LEE ,  Eun-Hyun KIM ,  Sang-Won SHIN ,  Eun-Young LEE

    IPC: H01L29/786 ,  H01L21/443 ,  H01L21/02 ,  H01L29/423 ,  H01L29/66

    Abstract: A semiconductor device may include a substrate, a gate electrode disposed on the substrate, a gate insulation layer disposed on the substrate to cover the gate electrode, an active layer including an oxide semiconductor disposed on the gate insulation layer, an insulating interlayer disposed on the gate insulation layer to cover the active layer, a protection structure including a plurality of metal oxide layers disposed on the insulating interlayer, and a source electrode and a drain electrode disposed on the protection structure.

    Abstract translation: 半导体器件可以包括衬底，设置在衬底上的栅极电极，设置在衬底上以覆盖栅电极的栅极绝缘层，包括设置在栅极绝缘层上的氧化物半导体的有源层，设置在栅绝缘层上的绝缘层 栅绝缘层覆盖有源层，包括设置在绝缘中间层上的多个金属氧化物层的保护结构以及设置在保护结构上的源电极和漏电极。

    ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    有机发光显示装置及其制造方法

    公开(公告)号：US20150340417A1

    公开(公告)日：2015-11-26

    申请号：US14815327

    申请日：2015-07-31

    Applicant: Samsung Display Co., Ltd.

    Inventor： Hyun-Joong CHUNG ,  Jin-Seong PARK ,  Jong-Han JEONG ,  Jae-Kyeong JEONG ,  Yeon-Gon MO ,  Min-Kyu KIM ,  Tae-Kyung AHN ,  Hui-Won YANG ,  Kwang-Suk KIM ,  Eun-Hyun KIM ,  Jae-Wook KANG ,  Jang-Soon IM

    IPC: H01L27/32 ,  H01L29/786 ,  H01L29/66 ,  H01L51/56

    CPC classification number: H01L27/3248 ,  H01L27/1225 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/7869 ,  H01L51/52 ,  H01L51/5237 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/5346

    Abstract: An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer.

    Abstract translation: 公开了一种有机发光显示装置，其可被配置为防止水分或氧气从外部穿透有机发光显示装置。 进一步公开了易于应用于大型显示​​装置和/或可容易地批量生产的有机发光显示装置。 另外公开了一种制造有机发光显示装置的方法。 有机发光显示装置可以包括例如薄膜晶体管（TFT），其包括栅电极，与栅电极绝缘的有源层，与栅电极绝缘的源电极和漏电极，并与活性层接触和 设置在所述源极和漏极之间的绝缘层和所述有源层; 以及与TFT电连接的有机发光二极管。 绝缘层可以包括例如与活性层接触的第一绝缘层; 以及由金属氧化物形成并设置在第一绝缘层上的第二绝缘层。

    THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
    薄膜晶体管及其制造方法

    公开(公告)号：US20150194530A1

    公开(公告)日：2015-07-09

    申请号：US14315712

    申请日：2014-06-26

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Eun-Hyun KIM

    IPC: H01L29/786 ,  H01L29/66

    CPC classification number: H01L29/7869 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696

    Abstract: A thin film transistor includes a gate electrode on a substrate, a gate insulating layer on the gate electrode, a semiconductor layer on the gate insulating layer, the semiconductor layer overlapping at least a portion of the gate electrode, a plurality of etch stoppers on the semiconductor layer, and a source electrode and a drain electrode spaced apart from each other and disposed on the etch stoppers and the semiconductor layer, wherein a plurality of channel regions are defined in the semiconductor layer by the etch stoppers on the semiconductor layer.

    Abstract translation: 薄膜晶体管包括在基板上的栅极电极，栅电极上的栅极绝缘层，栅极绝缘层上的半导体层，与栅极电极的至少一部分重叠的半导体层， 半导体层，以及源极电极和漏电极，彼此间​​隔开并设置在蚀刻停止器和半导体层上，其中通过半导体层上的蚀刻阻挡层在半导体层中限定多个沟道区。

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