公开(公告)号：US20160190328A1

公开(公告)日：2016-06-30

申请号：US14832606

申请日：2015-08-21

Applicant: Samsung Display Co., Ltd.

Inventor： Shin-Hyuk YANG ,  Eun-Hyun KIM ,  Tae-Young KIM

IPC: H01L29/786 ,  H01L29/423 ,  G02F1/1343 ,  H01L27/32 ,  G02F1/1368 ,  H01L29/24 ,  H01L29/417

CPC classification number: H01L29/7869 ,  G02F1/134309 ,  G02F1/1368 ,  H01L27/3248 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78696

Abstract: A thin film transistor including a gate electrode disposed on a substrate, a channel overlapping the gate electrode, a source electrode electrically connected to the channel, and a drain electrode electrically connected to the channel and spaced apart from the source electrode. The channel includes a first channel layer contacting the source electrode and the drain electrode, and a second channel layer disposed on the first channel layer and spaced apart from the source electrode and the drain electrode.

Abstract translation: 一种薄膜晶体管，包括设置在基板上的栅电极，与栅电极重叠的沟道，与沟道电连接的源电极，以及与该沟道电连接并与源电极间隔开的漏电极。 沟道包括与源电极和漏极接触的第一沟道层，以及设置在第一沟道层上并与源电极和漏电极隔开的第二沟道层。

公开(公告)号：US20160254334A1

公开(公告)日：2016-09-01

申请号：US14817900

申请日：2015-08-04

Applicant: Samsung Display Co., Ltd.

Inventor： Shin-Hyuk YANG ,  Tae-Young KIM ,  Hye-Hyang PARK

IPC: H01L27/32 ,  H01L29/66 ,  H01L21/4757 ,  H01L29/423 ,  H01L21/477 ,  H01L29/786 ,  H01L29/24

CPC classification number: H01L27/3262 ,  H01L21/47576 ,  H01L21/477 ,  H01L27/3248 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2227/323

Abstract: An oxide semiconductor device includes a first insulation layer pattern and a second insulation layer pattern disposed on a substrate, an active layer disposed on the first and second insulation layer patterns, the active layer including a source region including the first insulation layer pattern, a drain region including the second insulation layer pattern, and a channel region disposed between the source and drain regions, a source electrode contacting the source region, and a drain electrode contacting the drain region.

Abstract translation: 氧化物半导体器件包括第一绝缘层图案和设置在基板上的第二绝缘层图案，设置在第一绝缘层图案和第二绝缘层图案上的有源层，有源层包括包含第一绝缘层图案的源极区域，漏极 包括第二绝缘层图案的区域和设置在源极和漏极区域之间的沟道区域，与源极区域接触的源极电极和与漏极区域接触的漏极电极。

公开(公告)号：US20150255278A1

公开(公告)日：2015-09-10

申请号：US14478273

申请日：2014-09-05

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Byung-Du AHN ,  Tae-Young KIM ,  Yeon-Gon MO

IPC: H01L21/02 ,  G02F1/1368 ,  H01L27/32 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L21/02472 ,  G02F1/1368 ,  H01L21/02441 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/3248 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

Abstract: A thin film transistor including a gate electrode; an active layer insulated from the gate electrode; a source electrode and a drain electrode that are insulated from the gate electrode and are electrically connected to the active layer; a first etch stopper layer that is formed of an insulation material and contacts a portion of the active layer located between areas of the active layer that are electrically connected to the source electrode and the drain electrode; a second etch stopper layer on the first etch stopper layer, the second etch stopper layer being formed of an insulation material of a same type as the insulation material used to form the first etch stopper layer, the second etch stopper layer having a higher density than the first etch stopper layer; and a third etch stopper layer on the second etch stopper layer.

Abstract translation: 一种薄膜晶体管，包括栅电极; 与栅电极绝缘的有源层; 源电极和漏电极，与栅电极绝缘并且电连接到有源层; 第一蚀刻停止层，其由绝缘材料形成并且与位于有源层的与源电极和漏电极电连接的区域之间的有源层的一部分接触; 在第一蚀刻停止层上的第二蚀刻停止层，第二蚀刻停止层由与用于形成第一蚀刻停止层的绝缘材料相同类型的绝缘材料形成，第二蚀刻停止层的密度高于 第一蚀刻停止层; 以及第二蚀刻停止层上的第三蚀刻停止层。