公开(公告)号：US12022690B2

公开(公告)日：2024-06-25

申请号：US17244857

申请日：2021-04-29

Applicant: Samsung Display Co., Ltd. ,  Industry-Academic Cooperation Foundation, Yonsei University

Inventor： Jun Hyung Lim ,  Hyungjun Kim ,  Hyungjun Kim ,  Young Jun Kim ,  Ju Sang Park ,  Whang Je Woo

IPC: H10K59/121 ,  H01L21/02 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/76 ,  H01L29/786 ,  H10K59/12 ,  H10K71/00

CPC classification number: H10K59/1213 ,  H10K71/00 ,  H01L21/02568 ,  H01L21/0262 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7606 ,  H01L29/78696 ,  H10K59/1201

Abstract: A method may be used for manufacturing a semiconductor element. The method may include the following steps: preparing a substrate; forming a semiconductor layer on the substrate, wherein the semiconductor layer includes crystallized two-dimensional layers; forming a source electrode and a drain electrode on the semiconductor layer; forming an semiconductor member by wet etching the semiconductor layer using sodium hypochlorite as an etchant, wherein the wet etching results in a residue; and removing the residue using purified water and an inert gas.

公开(公告)号：US20230209994A1

公开(公告)日：2023-06-29

申请号：US18086797

申请日：2022-12-22

Applicant: Samsung Display Co., Ltd. ,  Postech Research And Business Development Foundation

Inventor： Hyungjun Kim ,  Yongyoung Noh ,  Junhyung Lim ,  Huihui Zhu

IPC: H10K85/50 ,  H10K59/125 ,  H10K71/10

CPC classification number: H10K85/50 ,  H10K59/125 ,  H10K71/10 ,  H10K10/462

Abstract: A thin-film transistor including: a gate electrode; a gate insulating layer that is in contact with the gate electrode; a semiconductor layer insulated from the gate electrode by the gate insulating layer; and a source electrode and a drain electrode that are in contact with the semiconductor layer, wherein the semiconductor layer includes a perovskite compound represented by Formula 1:


[A]2[B][X]6:Z  Formula 1



wherein, in Formula 1,
A includes a monovalent organic-cation, a monovalent inorganic-cation, or a combination thereof,
B includes Sn4+,
X includes a monovalent anion, and
Z includes a metal cation or a metalloid cation.

公开(公告)号：US11678547B2

公开(公告)日：2023-06-13

申请号：US17328026

申请日：2021-05-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyungjin Jeon ,  Joonseok Park ,  Soyoung Koo ,  Myounghwa Kim ,  Eoksu Kim ,  Taesang Kim ,  Hyungjun Kim ,  Yeonkeon Moon ,  Geunchul Park ,  Sangwoo Sohn ,  Junhyung Lim ,  Hyelim Choi

IPC: H01L27/32 ,  H01L29/78 ,  H01L51/52 ,  H01L51/56 ,  H01L27/12 ,  H01L49/02

CPC classification number: H01L27/3279 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3265 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/56 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1288 ,  H01L28/60 ,  H01L2227/323

Abstract: A display device includes: a substrate; a first thin film transistor and a second thin film transistor arranged over the substrate; a display element connected to the first thin film transistor; a wiring connected to the second thin film transistor and including a first wiring layer and a second wiring layer; a pattern insulating layer arranged between the first wiring layer and the second wiring layer; a planarization layer covering the wiring; and a connection electrode arranged on the planarization layer and connected to the first wiring layer and the second wiring layer respectively through a first contact hole and a second contact hole.

公开(公告)号：US20240128421A1

公开(公告)日：2024-04-18

申请号：US18364399

申请日：2023-08-02

Applicant: Samsung Display Co., Ltd. ,  Postech Research And Business Development Foundation

Inventor： Hyungjun Kim ,  Yongyoung Noh ,  Junhyung Lim ,  Ao Liu

IPC: H01L33/62 ,  H01L25/16 ,  H01L29/18 ,  H01L29/417 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L33/62 ,  H01L25/167 ,  H01L29/185 ,  H01L29/41733 ,  H01L29/66742 ,  H01L29/78696 ,  H01L2933/0066

Abstract: A display device includes: a substrate; a thin-film transistor on the substrate; and a light-emitting diode electrically connected to the thin-film transistor, wherein the thin-film transistor includes: a semiconductor layer in which a source region, a drain region, and a channel region are defined; a gate electrode insulated from the semiconductor layer and overlapping the semiconductor layer; a source electrode electrically connected to the source region; and a drain electrode electrically connected to the drain region, wherein the semiconductor layer includes a crystallized metal chalcogenide including a transition metal and a chalcogen element and has a layered structure.

公开(公告)号：US11812647B2

公开(公告)日：2023-11-07

申请号：US17841206

申请日：2022-06-15

Applicant: Samsung Display Co., Ltd.

Inventor： Soyoung Koo ,  Eoksu Kim ,  Hyungjun Kim ,  Yunyong Nam ,  Junhyung Lim ,  Kyungjin Jeon

IPC: H10K59/131 ,  G09G3/3266 ,  G09G3/3291 ,  H10K59/122 ,  H10K59/12

CPC classification number: H10K59/131 ,  G09G3/3266 ,  G09G3/3291 ,  H10K59/122 ,  G09G2300/0426 ,  H10K59/1201

Abstract: A display apparatus is disclosed that includes contact holes formed to expose at least a portion of a conductive layer or a semiconductor layer without damage to the surface of the conductive layer or the semiconductor layer, and a method of manufacturing the display apparatus. The display apparatus includes a substrate, a conductive mound arranged on the substrate, a first insulating mound arranged on the substrate, and a semiconductor layer including a first region arranged on the conductive mound, and a second region arranged on the first insulating mound. The second region of the semiconductor layer substantially covers an upper surface of the first insulating mound.

公开(公告)号：US11049929B2

公开(公告)日：2021-06-29

申请号：US16804152

申请日：2020-02-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyungjin Jeon ,  Joonseok Park ,  Soyoung Koo ,  Myounghwa Kim ,  Eoksu Kim ,  Taesang Kim ,  Hyungjun Kim ,  Yeonkeon Moon ,  Geunchul Park ,  Sangwoo Sohn ,  Junhyung Lim ,  Hyelim Choi

IPC: H01L27/32 ,  H01L29/78 ,  H01L51/52 ,  H01L51/56 ,  H01L27/12 ,  H01L49/02

Abstract: A display device includes: a substrate; a first thin film transistor and a second thin film transistor arranged over the substrate; a display element connected to the first thin film transistor; a wiring connected to the second thin film transistor and including a first wiring layer and a second wiring layer; a pattern insulating layer arranged between the first wiring layer and the second wiring layer; a planarization layer covering the wiring; and a connection electrode arranged on the planarization layer and connected to the first wiring layer and the second wiring layer respectively through a first contact hole and a second contact hole.

公开(公告)号：US12225794B2

公开(公告)日：2025-02-11

申请号：US18373277

申请日：2023-09-27

Applicant: Samsung Display Co., Ltd.

Inventor： Soyoung Koo ,  Eoksu Kim ,  Hyungjun Kim ,  Yunyong Nam ,  Junhyung Lim ,  Kyungjin Jeon

IPC: H10K59/131 ,  G09G3/3266 ,  G09G3/3291 ,  H10K59/122 ,  H10K59/12

Abstract: A display apparatus is disclosed that includes contact holes formed to expose at least a portion of a conductive layer or a semiconductor layer without damage to the surface of the conductive layer or the semiconductor layer, and a method of manufacturing the display apparatus. The display apparatus includes a substrate, a conductive mound arranged on the substrate, a first insulating mound arranged on the substrate, and a semiconductor layer including a first region arranged on the conductive mound, and a second region arranged on the first insulating mound. The second region of the semiconductor layer substantially covers an upper surface of the first insulating mound.

公开(公告)号：US12225771B2

公开(公告)日：2025-02-11

申请号：US17318350

申请日：2021-05-12

Applicant: Samsung Display Co., Ltd.

Inventor： Hyungjun Kim ,  Soyoung Koo ,  Eok Su Kim ,  Yunyong Nam ,  Jun Hyung Lim ,  Kyungjin Jeon

IPC: H10K59/121 ,  H10K59/126 ,  H10K71/00 ,  H10K59/12 ,  H10K59/123

Abstract: A display device includes a first transistor including a first transistor including a light blocking pattern on a substrate, an active pattern on the light blocking pattern, and a gate electrode on the active pattern, a second transistor configured to provide a data voltage to the first transistor in response to a gate signal, and a storage capacitor electrically connected to the gate electrode and the light blocking pattern, and including a first conductive pattern in a same layer as the light blocking pattern, a second conductive pattern on the first conductive pattern and overlapping the first conductive pattern, a third conductive pattern in a same layer as the gate electrode, overlapping the second conductive pattern, and electrically connected to the first conductive pattern, and a fourth conductive pattern on the third conductive pattern, overlapping the third conductive pattern, and electrically connected to the second conductive pattern.

公开(公告)号：US20240324339A1

公开(公告)日：2024-09-26

申请号：US18429437

申请日：2024-02-01

Applicant: Samsung Display Co., Ltd.

Inventor： Yunyong Nam ,  Soyoung Koo ,  Eoksu Kim ,  Hyungjun Kim

IPC: H10K59/131 ,  G09G3/3233

CPC classification number: H10K59/131 ,  G09G3/3233 ,  G09G2300/0426 ,  G09G2300/0842

Abstract: A display apparatus includes a substrate including a display area, in which a plurality of pixels are arranged, and a peripheral area outside the display area, a data line arranged in the display area and extending in a first direction, a first semiconductor pattern disposed on the data line and extending in a second direction crossing the first direction, a gate line disposed on the first semiconductor pattern and extending in the first direction to cross the first semiconductor pattern, and an anchor located at an end portion of the gate line and having a width greater than a width of the gate line.

公开(公告)号：US11574987B2

公开(公告)日：2023-02-07

申请号：US17223505

申请日：2021-04-06

Applicant: Samsung Display Co., LTD.

Inventor： Kyungjin Jeon ,  Soyoung Koo ,  Eok Su Kim ,  Hyungjun Kim ,  Yunyong Nam ,  Jun Hyung Lim

IPC: H01L27/32

Abstract: An electronic apparatus includes a first transistor including a first oxide semiconductor pattern, a second transistor including a second oxide semiconductor pattern, a blocking layer including a conductive material, a signal line including a first line and a second line which are disposed on different layers, and a bridge pattern electrically connected to each of the first transistor, the first line of the signal line, and the second line of the signal line, wherein the first line of the signal line and the blocking layer are disposed on a same layer, and the second line of the signal line and the first oxide semiconductor pattern are disposed on a same layer.