公开(公告)号：US20190280021A1

公开(公告)日：2019-09-12

申请号：US16286744

申请日：2019-02-27

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoungwon LEE ,  Taehoon YANG ,  Jongchan LEE ,  Woonghee JEONG ,  Yongsu LEE

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: A thin film transistor substrate, a display device, a method of manufacturing a thin film transistor substrate, and a method of manufacturing a display device, the thin film transistor substrate including a substrate; a first thin film transistor on the substrate, the first thin film transistor including a first active pattern, and a first gate electrode arranged to overlap at least a part of the first active pattern; and a second thin film transistor on the substrate, the second thin film transistor including a second active pattern that includes a plurality of protrusions on an upper surface thereof, and a second gate electrode arranged to overlap at least a part of the second active pattern.

公开(公告)号：US20180366526A1

公开(公告)日：2018-12-20

申请号：US15871271

申请日：2018-01-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jongchan LEE ,  Taehoon YANG ,  Woonghee JEONG ,  Kyoungwon LEE ,  Yongsu LEE

IPC: H01L27/32 ,  H01L27/12

Abstract: A display device includes at least one transistor. The transistor has an active pattern including a first active area and a second active area. The first active area includes a first channel area and an n-doped area contacting the first channel area. The second active area includes a second channel area and a p-doped area contacting the second channel area. A first insulation layer covers at least a portion of the active pattern. A first gate electrode is disposed on the first insulation layer and at least partially overlaps the first channel area. A second gate electrode is disposed on the first insulation layer and at least partially overlaps the second channel area. A taper angle of the second gate electrode is larger than a taper angle of the first gate electrode.

公开(公告)号：US20180366493A1

公开(公告)日：2018-12-20

申请号：US15869748

申请日：2018-01-12

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Woonghee JEONG ,  Taehoon YANG ,  Kyoungwon LEE ,  Jongchan LEE ,  Yongsu LEE

IPC: H01L27/12 ,  H01L27/092 ,  H01L29/45 ,  H01L27/32

CPC classification number: H01L27/124 ,  H01L27/3258 ,  H01L27/3276 ,  H01L29/78621

Abstract: A display device includes a common active pattern, a first gate electrode, and a second gate electrode. The common active pattern includes an NMOS area, a PMOS area, and a silicide area in a same layer as the NMOS area and the PMOS area. The silicide area electrically connects the NMOS area to the PMOS area. The NMOS area includes a first channel area and an n-doped area contacting the first channel area. The PMOS area includes a second channel area and a p-doped area contacting the second channel area. The first gate electrode overlaps the first channel area, and the second gate electrode overlaps the second channel area.

公开(公告)号：US20160013323A1

公开(公告)日：2016-01-14

申请号：US14565880

申请日：2014-12-10

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Woonghee JEONG ,  Yoonho KHANG ,  Myounghwa KIM ,  Youngki SHIN ,  Kyoungwon LEE

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/78603 ,  H01L27/1222 ,  H01L27/1274 ,  H01L29/66757 ,  H01L29/78675

Abstract: A thin film transistor substrate includes a substrate, an anodized aluminum layer on the substrate, a polycrystalline silicon layer covering the anodized aluminum layer, and an insulating layer covering the polycrystalline silicon layer.

Abstract translation: 薄膜晶体管衬底包括衬底，衬底上的阳极氧化铝层，覆盖阳极化铝层的多晶硅层和覆盖多晶硅层的绝缘层。

公开(公告)号：US20210159288A1

公开(公告)日：2021-05-27

申请号：US16892963

申请日：2020-06-04

Applicant: Samsung Display Co., Ltd.

Inventor： Jongchan LEE ,  Kibum KIM ,  Myeonghun SONG ,  Jeonghyun LEE ,  Sanghee JANG ,  Woonghee JEONG

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52

Abstract: A method of manufacturing a display device includes preparing a substrate, wherein the substrate includes a pixel area and a transmission area, forming insulating layers in the pixel area and in the transmission area, forming a pixel electrode on the insulating layers in the pixel area and forming a pixel-defining layer on the pixel electrode, wherein the pixel-defining layer exposes at least part of the pixel electrode, forming a metal layer on the pixel-defining layer in the pixel area, the at least part of the pixel electrode exposed by the pixel-defining layer in the pixel area, and the insulating layers in the transmission area, removing the metal layer on the insulating layers in the transmission area, and removing the insulating layers in the transmission area.

公开(公告)号：US20200176576A1

公开(公告)日：2020-06-04

申请号：US16781081

申请日：2020-02-04

Applicant: Samsung Display Co., LTD.

Inventor： Jongchan LEE ,  Taehoon YANG ,  Woonghee JEONG ,  Kyoungwon LEE ,  Yongsu LEE

IPC: H01L29/417 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: A display device includes a first insulation layer on a first gate electrode, an active pattern on the first insulation layer and including an NMOS area and a PMOS area, the PMOS area overlapping the first gate electrode, a second insulation layer on the active pattern. The active pattern includes an NMOS area and a PMOS area, with the PMOS area overlapping the first gate electrode. In addition, a second gate electrode is on the second insulation layer and overlaps the NMOS area. An active-protecting pattern is in the same layer as the second gate electrode and passes through the second insulation layer to contact the PMOS area. A third insulation layer is on the active-protecting pattern and the second gate electrode. A data metal electrode passes through the third insulation layer and contacts the active-protecting pattern.

公开(公告)号：US20180366525A1

公开(公告)日：2018-12-20

申请号：US15870095

申请日：2018-01-12

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jongchan LEE ,  Taehoon YANG ,  Woonghee JEONG ,  Kyoungwon LEE ,  Yongsu LEE

IPC: H01L27/32 ,  H01L49/02

CPC classification number: H01L29/41783 ,  H01L27/1222 ,  H01L27/1251 ,  H01L27/127 ,  H01L29/66575 ,  H01L29/66696 ,  H01L29/78675 ,  H01L29/78678

Abstract: A display device includes a first insulation layer on a first gate electrode, an active pattern on the first insulation layer and including an NMOS area and a PMOS area, the PMOS area overlapping the first gate electrode, a second insulation layer on the active pattern. The active pattern includes an NMOS area and a PMOS area, with the PMOS area overlapping the first gate electrode. In addition, a second gate electrode is on the second insulation layer and overlaps the NMOS area. An active-protecting pattern is in the same layer as the second gate electrode and passes through the second insulation layer to contact the PMOS area. A third insulation layer is on the active-protecting pattern and the second gate electrode. A data metal electrode passes through the third insulation layer and contacts the active-protecting pattern.