公开(公告)号：US09281343B2

公开(公告)日：2016-03-08

申请号：US13761930

申请日：2013-02-07

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong-Su Lee ,  Yoon-Ho Khang ,  Se-Hwan Yu ,  Dong-Jo Kim ,  Min-Jung Lee

IPC: H01L27/12 ,  H01L27/15 ,  G02F1/1345 ,  G02F1/1362

CPC classification number: H01L27/156 ,  G02F1/13458 ,  G02F1/136213 ,  G02F1/136227 ,  G02F2001/136295 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1248

Abstract: A thin film transistor display panel includes: a gate electrode, a source electrode and a drain electrode which are included in a thin film transistor on a substrate; a data line connected to the source electrode; a pixel link member connecting the drain electrode to a pixel electrode; and a gate pad connected to the gate electrode through a gate line and including a first gate subpad, a second gate subpad and a gate pad link member, in which the pixel link member and the gate pad link member are substantially same in thickness.

Abstract translation: 薄膜晶体管显示面板包括：栅电极，源电极和漏电极，其包括在基板上的薄膜晶体管中; 连接到源电极的数据线; 将漏电极连接到像素电极的像素连接构件; 以及栅极焊盘，其通过栅极线连接到栅电极，并且包括第一栅极子板，第二栅极子板和栅极焊盘连接部件，其中像素连接部件和栅极焊盘连接部件的厚度基本相同。

公开(公告)号：US20150001487A1

公开(公告)日：2015-01-01

申请号：US14103354

申请日：2013-12-11

Applicant: Samsung Display Co., Ltd.

Inventor： Do-Hyun Kwon ,  Il-Jeong Lee ,  Min-Jung Lee ,  Sung-Eun Lee ,  Jung-Kyu Lee ,  Kwang-Young Choi

IPC: H01L27/32 ,  H01L51/56 ,  H01L27/12

CPC classification number: H01L27/1259 ,  H01L27/1248 ,  H01L27/3258 ,  H01L51/5246

Abstract: A display device includes a substrate, an active layer, a gate insulation layer, a gate electrode, an interlayer insulation layer, a clad layer, a source electrode, and a drain electrode. The active layer is disposed on the substrate. The gate insulation layer is disposed on the active layer. The gate electrode is disposed on the gate insulation layer. The interlayer insulation layer is disposed on the gate electrode. A dielectric constant of the interlayer insulation layer is less than a dielectric constant of the gate insulation layer. The clad layer is disposed on the interlayer insulation layer. The source and drain electrodes are disposed on the clad layer.

Abstract translation: 显示装置包括基板，有源层，栅极绝缘层，栅极电极，层间绝缘层，覆盖层，源极电极和漏极电极。 有源层设置在基板上。 栅极绝缘层设置在有源层上。 栅电极设置在栅绝缘层上。 层间绝缘层设置在栅电极上。 层间绝缘层的介电常数小于栅极绝缘层的介电常数。 包覆层设置在层间绝缘层上。 源极和漏极设置在覆盖层上。

公开(公告)号：US09929191B2

公开(公告)日：2018-03-27

申请号：US15006295

申请日：2016-01-26

Applicant: Samsung Display Co., Ltd.

Inventor： Sang-Ho Park ,  Su-Hyoung Kang ,  Dong-Hwan Shim ,  Yoon-Ho Khang ,  Se-Hwan Yu ,  Min-Jung Lee ,  Yong-Su Lee

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L21/28

CPC classification number: H01L27/127 ,  H01L21/28008 ,  H01L27/124 ,  H01L27/1262 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78633 ,  H01L29/7869

Abstract: A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.

公开(公告)号：US09276086B2

公开(公告)日：2016-03-01

申请号：US14623693

申请日：2015-02-17

Applicant: Samsung Display Co., Ltd.

Inventor： Sang-Ho Park ,  Su-Hyoung Kang ,  Dong-Hwan Shim ,  Yoon-Ho Khang ,  Se-Hwan Yu ,  Min-Jung Lee ,  Yong-Su Lee

IPC: H01L21/00 ,  H01L29/66 ,  H01L29/786 ,  H01L21/28

CPC classification number: H01L27/127 ,  H01L21/28008 ,  H01L27/124 ,  H01L27/1262 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78633 ,  H01L29/7869

Abstract: A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.

公开(公告)号：US09190426B2

公开(公告)日：2015-11-17

申请号：US14103354

申请日：2013-12-11

Applicant: Samsung Display Co., Ltd.

Inventor： Do-Hyun Kwon ,  Il-Jeong Lee ,  Min-Jung Lee ,  Sung-Eun Lee ,  Jung-Kyu Lee ,  Kwang-Young Choi

IPC: H01L29/04 ,  H01L31/036 ,  H01L27/12 ,  H01L27/32 ,  H01L51/52

CPC classification number: H01L27/1259 ,  H01L27/1248 ,  H01L27/3258 ,  H01L51/5246

Abstract: A display device includes a substrate, an active layer, a gate insulation layer, a gate electrode, an interlayer insulation layer, a clad layer, a source electrode, and a drain electrode. The active layer is disposed on the substrate. The gate insulation layer is disposed on the active layer. The gate electrode is disposed on the gate insulation layer. The interlayer insulation layer is disposed on the gate electrode. A dielectric constant of the interlayer insulation layer is less than a dielectric constant of the gate insulation layer. The clad layer is disposed on the interlayer insulation layer. The source and drain electrodes are disposed on the clad layer.

Abstract translation: 显示装置包括基板，有源层，栅极绝缘层，栅极电极，层间绝缘层，覆盖层，源极电极和漏极电极。 有源层设置在基板上。 栅极绝缘层设置在有源层上。 栅电极设置在栅绝缘层上。 层间绝缘层设置在栅电极上。 层间绝缘层的介电常数小于栅极绝缘层的介电常数。 包覆层设置在层间绝缘层上。 源极和漏极设置在覆盖层上。

公开(公告)号：US09437661B2

公开(公告)日：2016-09-06

申请号：US14877044

申请日：2015-10-07

Applicant: Samsung Display Co., Ltd.

Inventor： Do-Hyun Kwon ,  Min-Jung Lee ,  Sung-Eun Lee ,  Il-Jeong Lee ,  Jung-Kyu Lee ,  Kwang-Young Choi

IPC: H01L27/32 ,  H01L29/423 ,  H01L29/49

CPC classification number: H01L27/3262 ,  H01L29/42384 ,  H01L29/4908 ,  H01L2227/323

Abstract: A thin film transistor substrate includes a semiconductor pattern on a base substrate, a first insulation member disposed on the semiconductor pattern, a second insulation pattern disposed on the first insulation member, and a gate electrode disposed on the first insulation member and the second insulation pattern. The second insulation pattern overlaps a first end portion of the semiconductor pattern, and exposes a second end portion of the semiconductor pattern opposite to the first end portion. The gate electrode overlaps both the first insulation member and the second insulation pattern.

Abstract translation: 薄膜晶体管基板包括在基底基板上的半导体图形，设置在半导体图案上的第一绝缘构件，设置在第一绝缘构件上的第二绝缘图案，以及设置在第一绝缘构件和第二绝缘图案上的栅电极 。 第二绝缘图案与半导体图案的第一端部重叠，并且暴露出与第一端部部分相反的半导体图案的第二端部。 栅电极与第一绝缘构件和第二绝缘图案重叠。

公开(公告)号：US09263590B2

公开(公告)日：2016-02-16

申请号：US14558937

申请日：2014-12-03

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jung-Kyu Lee ,  Do-Hyun Kwon ,  Min-Jung Lee ,  Sung-Eun Lee ,  Moo-Soon Ko

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/10

CPC classification number: H01L29/78675 ,  H01L29/1033 ,  H01L29/66757 ,  H01L29/78627 ,  H01L29/78696

Abstract: A thin film transistor (TFT) includes a semiconductor active layer, a gate electrode, a source electrode, and a drain electrode. The semiconductor active layer includes a first doped region as a source region, a second doped region as a drain region, an undoped region between the first and second doped regions. A third doped region is disposed between the second doped region and the undoped region. The gate electrode is insulated from the semiconductor active layer and overlaps the third doped region and the undoped region. The source electrode and the drain electrode are connected to the first and second doped regions.

Abstract translation: 薄膜晶体管（TFT）包括半导体有源层，栅电极，源电极和漏电极。 半导体有源层包括作为源极区域的第一掺杂区域，作为漏极区域的第二掺杂区域，第一和第二掺杂区域之间的未掺杂区域。 第三掺杂区域设置在第二掺杂区域与未掺杂区域之间。 栅电极与半导体有源层绝缘，并与第三掺杂区和未掺杂区重叠。 源电极和漏电极连接到第一和第二掺杂区域。

公开(公告)号：US09184253B2

公开(公告)日：2015-11-10

申请号：US14156624

申请日：2014-01-16

Applicant: Samsung Display Co., LTD.

Inventor： Do-Hyun Kwon ,  Min-Jung Lee ,  Sung-Eun Lee ,  Il-Jeong Lee ,  Jung-Kyu Lee ,  Kwang-Young Choi

IPC: H01L29/49 ,  H01L29/423 ,  H01L27/32

CPC classification number: H01L27/3262 ,  H01L29/42384 ,  H01L29/4908 ,  H01L2227/323

Abstract: A thin film transistor substrate includes a semiconductor pattern on a base substrate, a first insulation member disposed on the semiconductor pattern, a second insulation pattern disposed on the first insulation member, and a gate electrode disposed on the first insulation member and the second insulation pattern. The second insulation pattern overlaps a first end portion of the semiconductor pattern, and exposes a second end portion of the semiconductor pattern opposite to the first end portion. The gate electrode overlaps both the first insulation member and the second insulation pattern.

Abstract translation: 薄膜晶体管基板包括在基底基板上的半导体图形，设置在半导体图案上的第一绝缘构件，设置在第一绝缘构件上的第二绝缘图案，以及设置在第一绝缘构件和第二绝缘图案上的栅电极 。 第二绝缘图案与半导体图案的第一端部重叠，并且暴露出与第一端部部分相反的半导体图案的第二端部。 栅电极与第一绝缘构件和第二绝缘图案重叠。

公开(公告)号：US08963154B2

公开(公告)日：2015-02-24

申请号：US13755730

申请日：2013-01-31

Applicant: Samsung Display Co., Ltd.

Inventor： Sang-Ho Park ,  Su-Hyoung Kang ,  Dong-Hwan Shim ,  Yoon-Ho Khang ,  Se-Hwan Yu ,  Min-Jung Lee ,  Yong-Su Lee

IPC: H01L29/04 ,  H01L29/10 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L27/127 ,  H01L21/28008 ,  H01L27/124 ,  H01L27/1262 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78633 ,  H01L29/7869

Abstract: A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.

Abstract translation: 薄膜晶体管基板包括基底基板，设置在基底基板上的有源图案，设置在有源图案上的栅极绝缘图案，设置在栅极绝缘图案上并与沟道重叠的栅电极，以及布置的阻光图案 在基底基板和活性图案之间并且具有大于活性图案的尺寸。 有源图案包括源电极，漏电极和设置在源电极和漏极之间的沟道。