Abstract:
A photonic integrated circuit chip includes vertical grating couplers defined in a first layer. Second insulating layers overlie the vertical grating coupler and an interconnection structure with metal levels is embedded in the second insulating layers. A cavity extends in depth through the second insulating layers all the way to an intermediate level between the couplers and the metal level closest to the couplers. The cavity has lateral dimensions such that the cavity is capable of receiving a block for holding an array of optical fibers intended to be optically coupled to the couplers.
Abstract:
A microelectromechanical device includes: a substrate; a semiconductor die, bonded to the substrate and incorporating a microstructure; an adhesive film layer between the die and the substrate; and a protective layer between the die and the adhesive film layer. The protective layer has apertures, and the adhesive film layer adheres to the die through the apertures of the protective layer.
Abstract:
System for coupling light to integrated devices, comprising a grating coupler which couples light, such as light from a light source, into an optic fiber. The system includes an optic subsystem comprising a transmitter portion receiving the light emitted by the grating coupler and a receiver portion receiving light from the transmitter and focusing the light into the integrated device, the transmitter portion being configured to modify an angle distribution of the light emitted by the grating coupler and the receiving portion being configured to focus the light with modified angle distribution into the integrated device.
Abstract:
A process for assembly of an integrated device, envisages: providing a first body of semiconductor material integrating at least one electronic circuit and having a top surface; providing a second body of semiconductor material integrating at least one microelectromechanical structure and having a bottom surface; and stacking the second body on the first body with the interposition, between the top surface of the first body and the bottom surface of the second body, of an elastic spacer material. Prior to the stacking step, the step is envisaged of providing, in an integrated manner, at the top surface of the first body a confinement and spacing structure that confines inside it the elastic spacer material and supports the second body at a distance from the first body during the stacking step.
Abstract:
A wafer-level packaging, comprising: a first semiconductor body integrating a MEMS structure; a second semiconductor body, including a surface electrical-contact region and an ASIC coupled to the MEMS structure and to said electrical-contact region; a first coating layer, made of resin, which englobes and protects the first body, the second body, and the electrical-contact region; at least one first conductive through via, which extends through the first coating layer in an area corresponding, and electrically coupled, to the first electrical-contact region; an electrical-contact pad, which extends over the first coating layer, electrically coupled to the first conductive through via; a third semiconductor body, integrating an electronic circuit, glued on the first coating layer; a second coating layer, made of resin, which englobes and protects the third body; at least one second conductive through via, which extends completely through the second coating layer in an area corresponding, and electrically coupled, to the electrical-contact pad; and a further electrical-contact pad electrically coupled to the second conductive through via.
Abstract:
A method of testing a photonic device includes providing a plurality of optical test signals at respective inputs of a first plurality of inputs of an optical input circuit located on a substrate, combining the plurality of optical test signals into a combined optical test signal at an output of the optical input circuit, transmitting the combined optical test signal through the output to an input waveguide of an optical device under test, the optical device under test being located on the substrate, and measuring a response of the optical device under test to the combined optical test signal. Each of the plurality of optical test signals comprises a respective dominant wavelength of a plurality of dominant wavelengths.
Abstract:
A photonic integrated circuit chip includes vertical grating couplers defined in a first layer. Second insulating layers overlie the vertical grating coupler and an interconnection structure with metal levels is embedded in the second insulating layers. A cavity extends in depth through the second insulating layers all the way to an intermediate level between the couplers and the metal level closest to the couplers. The cavity has lateral dimensions such that the cavity is capable of receiving a block for holding an array of optical fibers intended to be optically coupled to the couplers.
Abstract:
An optoelectronic device may include a package having a component for sending/receiving optical signals along a first direction, and a chip of semiconductor material housed within the package. The chip may have a main surface and a portion exposed on the main surface for sending/receiving the optical signals along a second direction different from the first direction. The optoelectronic device may further include a component for deflecting the optical signals between the first direction and the second direction, the component being mounted on the main surface.
Abstract:
An optical integrated circuit device includes an electrically insulating substrate, an optical connection disposed at a boundary of the optical integrated circuit, and a first electrostatic discharge (ESD) protection structure in direct contact with and electrically coupled to the first waveguide. The optical connection includes a first waveguide. The first waveguide is disposed on the electrically insulating substrate and configured to transmit an optical signal. The first ESD protection structure is both electrically non-insulating and substantially optically transparent to the optical signal. An ESD diode including an anode and a cathode is electrically coupled to the first ESD protection structure. A ground connection is electrically coupled to the anode of the ESD diode.
Abstract:
A wafer-level packaging, comprising: a first semiconductor body integrating a MEMS structure; a second semiconductor body, including a surface electrical-contact region and an ASIC coupled to the MEMS structure and to said electrical-contact region; a first coating layer, made of resin, which englobes and protects the first body, the second body, and the electrical-contact region; at least one first conductive through via, which extends through the first coating layer in an area corresponding, and electrically coupled, to the first electrical-contact region; an electrical-contact pad, which extends over the first coating layer, electrically coupled to the first conductive through via; a third semiconductor body, integrating an electronic circuit, glued on the first coating layer; a second coating layer, made of resin, which englobes and protects the third body; at least one second conductive through via, which extends completely through the second coating layer in an area corresponding, and electrically coupled, to the electrical-contact pad; and a further electrical-contact pad electrically coupled to the second conductive through via.