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1.发明公开公开(公告)号：US20240145429A1
公开(公告)日：2024-05-02
申请号：US18496634
申请日：2023-10-27
IPC分类号： H01L23/00 , H01L21/56 , H01L23/31 , H01L23/495
CPC分类号： H01L24/82 , H01L21/561 , H01L23/3135 , H01L23/49513 , H01L24/24 , H01L24/32 , H01L24/73 , H01L24/92 , H01L2224/24105 , H01L2224/24247 , H01L2224/245 , H01L2224/32245 , H01L2224/73267 , H01L2224/82101 , H01L2224/82103 , H01L2224/92244 , H01L2924/01029
摘要： Laser direct structuring, LDS material is molded onto semiconductor dice arranged on die pads in a leadframe and the semiconductor dice are electrically coupled with electrically conductive leads in the leadframe via electrical connections that comprise electrically conductive formations exposed at the front surface of the LDS material, electrically conductive vias between the semiconductor dice and the front surface of the LDS material, as well as electrically conductive lines over the front surface of the LDS material that couple selected ones of the electrically conductive formations with selected ones of the second electrically conductive vias. The electrically conductive vias and lines are provided applying laser beam energy to the front surface of the laser direct structuring material at spatial positions located as a function of the electrically conductive formations exposed at the front surface of the LDS material acting as fiducials. The electrically conductive formations exposed at the front surface of the LDS material may comprise pillar-like extensions of the leadframe leads, electrically conductive material grown on the leads in cavities in the front surface of the LDS material or electrically conductive leads in a lead frame where the die pads are downset with respect to the leads.
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公开(公告)号：US20230386980A1
公开(公告)日：2023-11-30
申请号：US18324897
申请日：2023-05-26
发明人： Michele DERAI , Guendalina CATALANO
IPC分类号： H01L23/495 , H01L23/29 , H01L21/56 , H01L23/00 , H01L23/498
CPC分类号： H01L23/49513 , H01L23/29 , H01L21/563 , H01L24/03 , H01L24/05 , H01L23/49827 , H01L2224/05009 , H01L2224/05155 , H01L2224/05164 , H01L2224/05124 , H01L2224/05147
摘要： A semiconductor die is attached on a die-attachment portion of a substrate such as a leadframe. The semiconductor die has a front surface opposite the substrate and one or more contact pads at the front surface having an outer surface finishing of a first electrically conductive material such as NiPd or Al. An encapsulation of laser direct structuring, LDS material is molded onto the semiconductor die attached on the substrate. Laser beam energy is applied to selected locations of the front surface of the encapsulation of LDS material to activate the LDS material at the selected locations and structure therein electrically conductive formations comprising one or more vias towards the contact pad. The vias comprise a second electrically conductive material that is different from the first electrically conductive material of the outer surface finishing of the contact pad. Prior to growing the second electrically conductive material a nickel layer is formed over the outer surface finishing of the contact pad, wherein the nickel layer promotes adhesion between the second electrically conductive material and the first electrically conductive material.
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公开(公告)号：US20210305191A1
公开(公告)日：2021-09-30
申请号：US17199340
申请日：2021-03-11
IPC分类号： H01L23/00 , H01L21/56 , H01L23/495
摘要： A method comprises molding laser direct structuring material onto at least one semiconductor die, forming resist material on the laser direct structuring material, producing mutually aligned patterns of electrically-conductive formations in the laser direct structuring material and etched-out portions of the resist material having lateral walls sidewise of said electrically-conductive formations via laser beam energy, and forming electrically-conductive material at said etched-out portions of the resist material, the electrically-conductive material having lateral confinement surfaces at said lateral walls of said etched-out portions of the resist material.
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公开(公告)号：US20230369279A1
公开(公告)日：2023-11-16
申请号：US18144347
申请日：2023-05-08
IPC分类号： H01L23/00 , H01L23/495
CPC分类号： H01L24/40 , H01L23/49582 , H01L24/32 , H01L24/37 , H01L24/73 , H01L24/83 , H01L24/84 , H01L24/92 , H01L23/49513 , H01L2224/32245 , H01L2224/37013 , H01L2224/40245 , H01L2224/40499 , H01L2224/73263 , H01L2224/83192 , H01L2224/83801 , H01L2224/84801 , H01L2224/92246 , H01L2924/01029 , H01L2924/01047
摘要： A semiconductor die is attached on a die-attachment portion of a planar substrate. A planar electrically conductive clip in mounted onto the semiconductor die. The semiconductor die is sandwiched between the die-attachment portion and the electrically conductive clip. A distal portion of the electrically conductive clip extending away from the semiconductor die is spaced from an electrically conductive lead of the planar substrate by a gap. This gap is filled by a mass of gap-filling material transferred to an upper surface of the electrically conductive lead via Laser Induced Forward Transfer (LIFT) processing. A mass of the gap-filling material is sized and dimensioned to substantially fill the gap.
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公开(公告)号：US20220199564A1
公开(公告)日：2022-06-23
申请号：US17549515
申请日：2021-12-13
发明人： Michele DERAI , Guendalina CATALANO
IPC分类号： H01L23/00 , H01L23/495
摘要： A semiconductor device includes a support substrate with leads arranged therearound, a semiconductor die on the support substrate, and a layer of laser-activatable material molded onto the die and the leads. The leads include proximal portions facing towards the support substrate and distal portions facing away from the support substrate. The semiconductor die includes bonding pads at a front surface thereof which is opposed to the support substrate, and is arranged onto the proximal portions of the leads. The semiconductor device has electrically-conductive formations laser-structured at selected locations of the laser-activatable material. The electrically-conductive formations include first vias extending between the bonding pads and a front surface of the laser-activatable material, second vias extending between the distal portions of the leads and the front surface of the laser-activatable material, and lines extending at the front surface of the laser-activatable material and connecting selected first vias to selected second vias.
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6.发明公开公开(公告)号：US20230187296A1
公开(公告)日：2023-06-15
申请号：US18062479
申请日：2022-12-06
IPC分类号： H01L23/31 , H01L23/495 , H01L21/48
CPC分类号： H01L23/3142 , H01L23/3114 , H01L23/49513 , H01L21/4821
摘要： The present disclosure is directed to a method of manufacturing semiconductor devices that includes providing a substrate such as a leadframe having a non-etched adhesion promoter, NEAP layer over the die mounting surface and attaching thereon a semiconductor die having an attachment surface including a first and a second die areas that are wettable by electrically conductive solder material. The NEAP layer is selectively removed, e.g., via laser ablation, from the first substrate area and the second substrate area of the die mounting surface of the substrate. The first substrate area and the second substrate area of the substrate having complementary shapes with respect to the first and second die areas of the semiconductor die. Electrically conductive solder material is dispensed on the first and second substrate areas of the substrate. A semiconductor die is flipped onto the substrate with the first die area and the second die area aligned with the first substrate area and the second substrate area of the substrate having the solder material dispensed thereon. The electrically conductive solder material thus provides electrical coupling of: the first die area and the first substrate area, and the second die area and the second substrate area.
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公开(公告)号：US20230230948A1
公开(公告)日：2023-07-20
申请号：US18191726
申请日：2023-03-28
IPC分类号： H01L23/00 , H01L21/56 , H01L23/495
CPC分类号： H01L24/19 , H01L21/561 , H01L23/49503 , H01L24/24 , H01L24/96 , H01L2224/24175
摘要： A method comprises molding laser direct structuring material onto at least one semiconductor die, forming resist material on the laser direct structuring material, producing mutually aligned patterns of electrically-conductive formations in the laser direct structuring material and etched-out portions of the resist material having lateral walls sidewise of said electrically-conductive formations via laser beam energy, and forming electrically-conductive material at said etched-out portions of the resist material, the electrically-conductive material having lateral confinement surfaces at said lateral walls of said etched-out portions of the resist material.
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公开(公告)号：US20230066285A1
公开(公告)日：2023-03-02
申请号：US17895783
申请日：2022-08-25
IPC分类号： H01L23/31 , H01L23/29 , H01L23/495 , H01L25/065 , H01L21/683 , H01L21/56
摘要： A semiconductor device comprises: one or more semiconductor dice arranged on a substrate such as a leadframe, an insulating encapsulation of, e.g., LDS material molded onto the semiconductor die or dice arranged on the substrate, the encapsulation having a surface opposite the substrate, and electrically conductive formations (e.g., die-to-lead 181, 182, 183 or die-to-die 201, 202) provided in the encapsulation and coupled to the semiconductor die or dice arranged on the substrate. A tape is laminated onto the surface of the encapsulation opposite the substrate and electrically conductive contacts to the electrically conductive formations extend through the tape laminated onto the encapsulation. The length of the electrically conductive contacts is thus reduced to the thickness of the tape laminated onto the encapsulation, thus facilitating producing, e.g., “vertical” MOSFET power devices having a reduced drain-source “on” resistance, RDSON.
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