公开(公告)号：US10128396B2

公开(公告)日：2018-11-13

申请号：US14055397

申请日：2013-10-16

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Cosimo Gerardi ,  Cristina Tringali ,  Sebastiano Ravesi ,  Marina Foti ,  NoemiGraziana Sparta′ ,  Corrado Accardi ,  Stella Loverso

IPC: H01L31/00 ,  H01L31/075 ,  H01L31/0376 ,  H01L31/0392 ,  H01L31/18 ,  H01L31/20

Abstract: A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.

公开(公告)号：US09331151B2

公开(公告)日：2016-05-03

申请号：US14788159

申请日：2015-06-30

Applicant: STMicroelectronics S.r.l.

Inventor： Sebastiano Ravesi ,  Corrado Accardi ,  Cristina Tringali ,  Noemi Graziana Sparta′ ,  Stella Loverso ,  Filippo Giannazzo

IPC: H01L23/58 ,  H01L21/322 ,  H01L29/16 ,  H01L21/02 ,  H01L21/762 ,  H01L29/786 ,  H01L31/028

CPC classification number: H01L29/1606 ,  G01R31/2648 ,  H01L21/02376 ,  H01L21/7624 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78684 ,  H01L31/028

Abstract: The present disclosure regards a method for coupling a graphene layer to a substrate having at least one hydrophilic surface, the method comprising the steps of providing the substrate having at least one hydrophilic surface, depositing on the hydrophilic surface a layer of a solvent selected in the group constituted by acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone and mixtures thereof and depositing on the solvent layer a graphene layer. It moreover regards an electronic device comprising the graphene/substrate structure obtained.

公开(公告)号：US12165871B2

公开(公告)日：2024-12-10

申请号：US17083181

申请日：2020-10-28

Applicant: STMicroelectronics S.r.l.

Inventor： Ferdinando Iucolano ,  Cristina Tringali

IPC: H01L29/778 ,  H01L21/285 ,  H01L21/3213 ,  H01L29/20 ,  H01L29/205 ,  H01L29/47 ,  H01L29/66

Abstract: A method for manufacturing a HEMT device includes forming, on a heterostructure, a dielectric layer, forming a through opening through the dielectric layer, and forming a gate electrode in the through opening. Forming the gate electrode includes forming a sacrificial structure, depositing by evaporation a first gate metal layer layer, carrying out a lift-off of the sacrificial structure, depositing a second gate metal layer by sputtering, and depositing a third gate metal layer. The second gate metal layer layer forms a barrier against the diffusion of metal atoms towards the heterostructure.

公开(公告)号：US11257975B2

公开(公告)日：2022-02-22

申请号：US16167796

申请日：2018-10-23

Applicant: STMicroelectronics S.r.l.

Inventor： Cosimo Gerardi ,  Cristina Tringali ,  Sebastiano Ravesi ,  Marina Foti ,  NoemiGraziana Sparta' ,  Corrado Accardi ,  Stella Loverso

IPC: H01L31/075 ,  H01L31/0376 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0392

Abstract: A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.

公开(公告)号：US11018008B2

公开(公告)日：2021-05-25

申请号：US16209680

申请日：2018-12-04

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Edoardo Zanetti ,  Simone Rascuná ,  Mario Giuseppe Saggio ,  Alfio Guarnera ,  Leonardo Fragapane ,  Cristina Tringali

IPC: H01L21/04 ,  H01L21/285 ,  H01L29/872 ,  H01L29/66 ,  H01L29/16 ,  H01L29/78 ,  H01L29/06

Abstract: A manufacturing method of an electronic device includes: forming a drift layer of an N type; forming a trench in the drift layer; forming an edge-termination structure alongside the trench by implanting dopant species of a P type; and forming a depression region between the trench and the edge-termination structure by digging the drift layer. The steps of forming the depression region and the trench are carried out at the same time. The step of forming the depression region comprises patterning the drift layer to form a structural connection with the edge-termination structure having a first slope, and the step of forming the trench comprises etching the drift layer to define side walls of the trench, which have a second slope steeper than the first slope.

公开(公告)号：US11854809B2

公开(公告)日：2023-12-26

申请号：US18061795

申请日：2022-12-05

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Edoardo Zanetti ,  Simone Rascuna' ,  Mario Giuseppe Saggio ,  Alfio Guarnera ,  Leonardo Fragapane ,  Cristina Tringali

IPC: H01L21/04 ,  H01L21/285 ,  H01L29/872 ,  H01L29/66 ,  H01L29/16 ,  H01L29/78 ,  H01L29/06

CPC classification number: H01L21/046 ,  H01L21/0495 ,  H01L21/28537 ,  H01L29/0619 ,  H01L29/0661 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/66143 ,  H01L29/66734 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872 ,  H01L29/8725

Abstract: A manufacturing method of an electronic device includes: forming a drift layer of an N type; forming a trench in the drift layer; forming an edge-termination structure alongside the trench by implanting dopant species of a P type; and forming a depression region between the trench and the edge-termination structure by digging the drift layer. The steps of forming the depression region and the trench are carried out at the same time. The step of forming the depression region comprises patterning the drift layer to form a structural connection with the edge-termination structure having a first slope, and the step of forming the trench comprises etching the drift layer to define side walls of the trench, which have a second slope steeper than the first slope.

公开(公告)号：US11545362B2

公开(公告)日：2023-01-03

申请号：US17244393

申请日：2021-04-29

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Edoardo Zanetti ,  Simone Rascuna' ,  Mario Giuseppe Saggio ,  Alfio Guarnera ,  Leonardo Fragapane ,  Cristina Tringali

IPC: H01L29/16 ,  H01L21/04 ,  H01L21/285 ,  H01L29/872 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06

Abstract: A manufacturing method of an electronic device includes: forming a drift layer of an N type; forming a trench in the drift layer; forming an edge-termination structure alongside the trench by implanting dopant species of a P type; and forming a depression region between the trench and the edge-termination structure by digging the drift layer. The steps of forming the depression region and the trench are carried out at the same time. The step of forming the depression region comprises patterning the drift layer to form a structural connection with the edge-termination structure having a first slope, and the step of forming the trench comprises etching the drift layer to define side walls of the trench, which have a second slope steeper than the first slope.

公开(公告)号：US20220199846A1

公开(公告)日：2022-06-23

申请号：US17649837

申请日：2022-02-03

Applicant: STMicroelectronics S.r.l.

Inventor： Cosimo Gerardi ,  Cristina Tringali ,  Sebastiano Ravesi ,  Marina Foti ,  NoemiGraziana Sparta' ,  Corrado Accardi ,  Stella Loverso

IPC: H01L31/075 ,  H01L31/0376 ,  H01L31/0392 ,  H01L31/18 ,  H01L31/20

Abstract: A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.

公开(公告)号：US12278283B2

公开(公告)日：2025-04-15

申请号：US18477372

申请日：2023-09-28

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Ferdinando Iucolano ,  Cristina Tringali

IPC: H01L29/66 ,  H01L21/285 ,  H01L29/06 ,  H01L29/47 ,  H01L29/778 ,  H01L29/20 ,  H01L29/205

Abstract: An HEMT includes a semiconductor body, which includes a semiconductor heterostructure, and a conductive gate region. The gate region includes: a contact region, which is made of a first metal material and contacts the semiconductor body to form a Schottky junction; a barrier region, which is made of a second metal material and is set on the contact region; and a top region, which extends on the barrier region and is made of a third metal material, which has a resistivity lower than the resistivity of the first metal material. The HEMT moreover comprises a dielectric region, which includes at least one front dielectric subregion, which extends over the contact region, delimiting a front opening that gives out onto the contact region; and wherein the barrier region extends into the front opening and over at least part of the front dielectric subregion.

公开(公告)号：US12166143B2

公开(公告)日：2024-12-10

申请号：US17649837

申请日：2022-02-03

Applicant: STMicroelectronics S.r.l.

Inventor： Cosimo Gerardi ,  Cristina Tringali ,  Sebastiano Ravesi ,  Marina Foti ,  NoemiGraziana Sparta′ ,  Corrado Accardi ,  Stella Loverso

IPC: H01L21/02 ,  H01L31/0376 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20

Abstract: A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.