公开(公告)号：US20140064312A1

公开(公告)日：2014-03-06

申请号：US14032904

申请日：2013-09-20

Applicant: STC.UNM

Inventor： Seung Chang Lee ,  Steven R.J. Brueck

IPC: H01L21/02 ,  H01S5/32 ,  H01L29/15

CPC classification number: H01L21/02603 ,  B82Y10/00 ,  B82Y40/00 ,  B82Y99/00 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02507 ,  H01L21/02521 ,  H01L21/02639 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/127 ,  H01L29/158 ,  H01L29/7783 ,  H01L29/7853 ,  H01L33/06 ,  H01L33/18 ,  H01S5/32 ,  Y10S977/951 ,  Y10S977/962

Abstract: Exemplary embodiments provide semiconductor nanowires and nanowire devices/applications and methods for their formation. In embodiments, in-plane nanowires can be epitaxially grown on a patterned substrate, which are more favorable than vertical ones for device processing and three-dimensional (3D) integrated circuits. In embodiments, the in-plane nanowire can be formed by selective epitaxy utilizing lateral overgrowth and faceting of an epilayer initially grown in a one-dimensional (1D) nanoscale opening. In embodiments, optical, electrical, and thermal connections can be established and controlled between the nanowire, the substrate, and additional electrical or optical components for better device and system performance.

Abstract translation: 示例性实施例提供用于其形成的半导体纳米线和纳米线器件/应用和方法。 在实施例中，平面内纳米线可以在图案化衬底上外延生长，其比用于器件处理和三维（3D）集成电路的垂直纳米线更有利。 在实施方案中，可以通过使用最初在一维（1D）纳米尺度开口中生长的外延层的横向过生长和刻面的选择性外延来形成平面内纳米线。 在实施例中，可以在纳米线，衬底和附加电气或光学部件之间建立和控制光学，电气和热连接，以获得更好的器件和系统性能。

公开(公告)号：US08785226B2

公开(公告)日：2014-07-22

申请号：US14032904

申请日：2013-09-20

Applicant: STC.UNM

Inventor： Seung Chang Lee ,  Steven R. J. Brueck

IPC: H01S5/10 ,  H01S5/323 ,  H01S5/343 ,  H01L21/00

CPC classification number: H01L21/02603 ,  B82Y10/00 ,  B82Y40/00 ,  B82Y99/00 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02507 ,  H01L21/02521 ,  H01L21/02639 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/127 ,  H01L29/158 ,  H01L29/7783 ,  H01L29/7853 ,  H01L33/06 ,  H01L33/18 ,  H01S5/32 ,  Y10S977/951 ,  Y10S977/962

Abstract: Exemplary embodiments provide semiconductor nanowires and nanowire devices/applications and methods for their formation. In embodiments, in-plane nanowires can be epitaxially grown on a patterned substrate, which are more favorable than vertical ones for device processing and three-dimensional (3D) integrated circuits. In embodiments, the in-plane nanowire can be formed by selective epitaxy utilizing lateral overgrowth and faceting of an epilayer initially grown in a one-dimensional (1D) nanoscale opening. In embodiments, optical, electrical, and thermal connections can be established and controlled between the nanowire, the substrate, and additional electrical or optical components for better device and system performance.

Abstract translation: 示例性实施例提供用于其形成的半导体纳米线和纳米线器件/应用和方法。 在实施例中，平面内纳米线可以在图案化衬底上外延生长，其比用于器件处理和三维（3D）集成电路的垂直纳米线更有利。 在实施方案中，可以通过使用最初在一维（1D）纳米尺度开口中生长的外延层的横向过生长和刻面的选择性外延来形成平面内纳米线。 在实施例中，可以在纳米线，衬底和附加电气或光学部件之间建立和控制光学，电气和热连接，以获得更好的器件和系统性能。