公开(公告)号：US20200227462A1

公开(公告)日：2020-07-16

申请号：US16830916

申请日：2020-03-26

Applicant: SONY CORPORATION

Inventor： Masaki HANEDA

IPC: H01L27/146 ,  H01L27/14 ,  H01L25/065 ,  H01L23/00 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: The present disclosure relates to a semiconductor device, a manufacturing method, a solid state image sensor, and electronic equipment that can achieve further improvement in reliability. Connection pads are formed in interlayer films provided respectively in interconnection layers of a sensor substrate on which a sensor surface having pixels is formed and a signal processing substrate configured to perform signal processing on the sensor substrate to make an electrical connection between the sensor substrate and the signal processing substrate. Then, a metal oxide film is formed between the interlayer films of the sensor substrate and the signal processing substrate, between the connection pad formed on a side toward the sensor substrate and the interlayer film on a side toward the signal processing substrate, and between the connection pad formed on the side toward the signal processing substrate and the interlayer film on the side toward the sensor substrate. The present technology can be applied to a laminated-type CMOS image sensor, for example.

公开(公告)号：US20180138224A1

公开(公告)日：2018-05-17

申请号：US15574207

申请日：2016-05-06

Applicant: SONY CORPORATION

Inventor： Masaki HANEDA

IPC: H01L27/146 ,  H01L23/00

CPC classification number: H01L27/14634 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L24/89 ,  H01L25/0657 ,  H01L27/14 ,  H01L27/14636 ,  H01L27/1469 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/03616 ,  H01L2224/05007 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05618 ,  H01L2224/05639 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/0566 ,  H01L2224/0801 ,  H01L2224/08121 ,  H01L2224/08145 ,  H01L2224/08147 ,  H01L2224/80009 ,  H01L2224/80097 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80948 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/0104 ,  H01L2924/05442 ,  H01L2924/00014

Abstract: The present disclosure relates to a semiconductor device, a manufacturing method, a solid state image sensor, and electronic equipment that can achieve further improvement in reliability. Connection pads are formed in interlayer films provided respectively in interconnection layers of a sensor substrate on which a sensor surface having pixels is formed and a signal processing substrate configured to perform signal processing on the sensor substrate to make an electrical connection between the sensor substrate and the signal processing substrate. Then, a metal oxide film is formed between the interlayer films of the sensor substrate and the signal processing substrate, between the connection pad formed on a side toward the sensor substrate and the interlayer film on a side toward the signal processing substrate, and between the connection pad formed on the side toward the signal processing substrate and the interlayer film on the side toward the sensor substrate. The present technology can be applied to a laminated-type CMOS image sensor, for example.

公开(公告)号：US20190206919A1

公开(公告)日：2019-07-04

申请号：US16297167

申请日：2019-03-08

Applicant: SONY CORPORATION

Inventor： Masaki HANEDA

IPC: H01L27/146 ,  H01L21/3205 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768 ,  H01L23/00 ,  H01L27/14

CPC classification number: H01L27/14634 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L24/89 ,  H01L25/0657 ,  H01L27/14 ,  H01L27/14636 ,  H01L27/1469 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/03616 ,  H01L2224/05007 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05618 ,  H01L2224/05639 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/0566 ,  H01L2224/0801 ,  H01L2224/08121 ,  H01L2224/08145 ,  H01L2224/08147 ,  H01L2224/80009 ,  H01L2224/80097 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80948 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/0104 ,  H01L2924/05442 ,  H01L2924/00014

Abstract: The present disclosure relates to a semiconductor device, a manufacturing method, a solid state image sensor, and electronic equipment that can achieve further improvement in reliability. Connection pads are formed in interlayer films provided respectively in interconnection layers of a sensor substrate on which a sensor surface having pixels is formed and a signal processing substrate configured to perform signal processing on the sensor substrate to make an electrical connection between the sensor substrate and the signal processing substrate. Then, a metal oxide film is formed between the interlayer films of the sensor substrate and the signal processing substrate, between the connection pad formed on a side toward the sensor substrate and the interlayer film on a side toward the signal processing substrate, and between the connection pad formed on the side toward the signal processing substrate and the interlayer film on the side toward the sensor substrate. The present technology can be applied to a laminated-type CMOS image sensor, for example.

公开(公告)号：US20210183661A1

公开(公告)日：2021-06-17

申请号：US17180359

申请日：2021-02-19

Applicant: SONY CORPORATION

Inventor： Masaki HANEDA

IPC: H01L21/3205 ,  H01L23/00 ,  H01L27/14 ,  H01L23/522 ,  H01L23/532 ,  H01L27/146 ,  H01L21/768 ,  H01L25/065

Abstract: Connection pads are formed in interlayer films provided respectively in interconnection layers of a sensor substrate on which a sensor surface having pixels is formed and a signal processing substrate configured to perform signal processing on the sensor substrate to make an electrical connection between the sensor substrate and the signal processing substrate. Then, a metal oxide film is formed between the interlayer films of the sensor substrate and the signal processing substrate, between the connection pad formed on a side toward the sensor substrate and the interlayer film on a side toward the signal processing substrate, and between the connection pad formed on the side toward the signal processing substrate and the interlayer film on the side toward the sensor substrate. The present technology can be applied to a laminated-type CMOS image sensor, for example.