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1.发明申请公开(公告)号：US20140367668A1
公开(公告)日：2014-12-18
申请号：US14372702
申请日：2013-01-18
Applicant: SONY CORPORATION
Inventor： Nobutoshi Fujii , Hayato Iwamoto
IPC: H01L27/30 , H01L27/146
CPC classification number: H01L27/307 , G02B3/0012 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14647 , H01L27/14685
Abstract: A method of manufacturing a photoelectric conversion device includes: forming a first electrode on a first surface side of a substrate that has two opposing surfaces; forming an electrode section on a second surface side of the substrate, the electrode section being used for external connection; and after forming the first electrode and the electrode section, forming an organic photoelectric conversion layer and a second electrode on the first electrode.
Abstract translation: 一种制造光电转换装置的方法包括：在具有两个相对表面的基板的第一表面侧上形成第一电极; 在所述基板的第二表面侧上形成电极部，所述电极部用于外部连接; 在形成第一电极和电极部之后，在第一电极上形成有机光电转换层和第二电极。
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公开(公告)号：US11127771B2
公开(公告)日：2021-09-21
申请号：US16169735
申请日：2018-10-24
Applicant: SONY CORPORATION
Inventor： Yusuke Tanaka , Toshifumi Wakano , Keiji Tatani , Takashi Nagano , Hayato Iwamoto , Keiichi Nakazawa , Tomoyuki Hirano , Shinpei Yamaguchi , Shunsuke Maruyama
IPC: H01L27/148 , H01L27/146
Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device includes a silicon substrate, and at least a first photodiode formed in the silicon substrate. The device also includes an epitaxial layer with a first surface adjacent a surface of the silicon substrate, and a transfer transistor with a gate electrode that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided. A floating diffusion is formed in an epitaxial layer, and a plurality of transfer gate electrodes that are each electrically connected to the floating diffusion by one of the transfer gate electrodes is provided.
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公开(公告)号：US09941326B2
公开(公告)日：2018-04-10
申请号：US14989508
申请日：2016-01-06
Applicant: Sony Corporation
Inventor： Nobutoshi Fujii , Kenichi Aoyagi , Yoshiya Hagimoto , Hayato Iwamoto
IPC: H01L21/00 , H01L27/146 , H01L25/00 , H01L31/18 , H01L25/065
CPC classification number: H01L27/14687 , H01L25/0657 , H01L25/50 , H01L27/14634 , H01L27/1464 , H01L27/14683 , H01L27/14689 , H01L27/1469 , H01L31/1876 , H01L2924/0002 , Y02E10/50 , Y02P70/521 , H01L2924/00
Abstract: The present technology includes: bonding a device formation side of a first substrate having a first device and a device formation side of a second substrate having a second device in opposition to each other; forming a protective film on at least an edge of the second substrate having the second device; and reducing a thickness of the first substrate.
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4.发明授权Substrate processing method, substrate processing apparatus, and storage medium 有权基板处理方法，基板处理装置和存储介质公开(公告)号：US09362106B2
公开(公告)日：2016-06-07
申请号：US13910249
申请日：2013-06-05
Applicant: Sony Corporation , Tokyo Electron Limited
Inventor： Hayato Iwamoto , Yoshiya Hagimoto , Tomoki Tetsuka , Shinichiro Shimomura , Teruomi Minami , Hiroki Sakurai , Hirotaka Maruyama , Yosuke Kawabuchi , Hiroshi Tanaka
IPC: H01L21/461 , H01L21/02 , H01L21/67 , H01L21/306
CPC classification number: H01L21/02019 , H01L21/02052 , H01L21/30608 , H01L21/6708
Abstract: A wafer is held horizontally and rotated by a substrate holding mechanism. An aqueous alkaline solution is supplied to a wafer by a nozzle and caused to flow from a central portion to a peripheral edge portion of the wafer, thereby etching the wafer. An amount of oxygen, which is equal to or more than the amount of oxygen in atmospheric air involved in the aqueous alkaline solution flowing on the wafer, is previously dissolved in the aqueous alkaline solution.
Abstract translation: 晶片被水平地保持并由基板保持机构旋转。 通过喷嘴将水性碱性溶液供给到晶片，并使其从晶片的中心部分流向周边边缘部分，从而蚀刻晶片。 预先将一定量的氧气等于或大于在流过晶片的碱性水溶液中所涉及的大气中的氧气的量，将其溶解在碱性水溶液中。
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5.发明申请DISPLAY DEVICE, METHOD OF MANUFACTURING DISPLAY DEVICE, AND ELECTRONIC APPARATUS 审中-公开显示装置，制造显示装置的方法和电子装置公开(公告)号：US20150277017A1
公开(公告)日：2015-10-01
申请号：US14432871
申请日：2013-11-12
Applicant: SONY CORPORATION
Inventor： Kenichi Aoyagi , Hayato Iwamoto
CPC classification number: G02B6/005 , B32B37/24 , B32B38/0004 , B32B2037/243 , B32B2307/402 , B32B2457/20 , F21V9/08 , G02B6/0068 , H01L27/3211 , H01L27/322 , H01L27/3246 , H01L27/3283 , H01L51/5271 , Y10T156/10 , Y10T156/1082
Abstract: There is provided a display device including a plurality of light-emitting elements that are disposed on a first substrate, and a guide member that is disposed in a boundary between pixel regions corresponding to the light-emitting elements and guides light emitted from each of the light-emitting elements between the first substrate and a second substrate facing the first substrate in a main light emission direction of each of the light-emitting elements.
Abstract translation: 提供了一种显示装置，其包括设置在第一基板上的多个发光元件，以及引导构件，其被布置在与发光元件对应的像素区域之间的边界中并引导从每个发光元件发射的光 在每个发光元件的主发光方向上的第一基板和面对第一基板的第二基板之间的发光元件。
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Patent Agency Ranking
公开(公告)号：US11094725B2
公开(公告)日：2021-08-17
申请号：US16121418
申请日：2018-09-04
Applicant: SONY CORPORATION
Inventor： Yusuke Tanaka , Toshifumi Wakano , Keiji Tatani , Takashi Nagano , Hayato Iwamoto , Keiichi Nakazawa , Tomoyuki Hirano , Shinpei Yamaguchi , Shunsuke Maruyama
IPC: H01L27/148 , H01L27/146
Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device includes a silicon substrate, and at least a first photodiode formed in the silicon substrate. The device also includes an epitaxial layer with a first surface adjacent a surface of the silicon substrate, and a transfer transistor with a gate electrode that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided. A floating diffusion is formed in an epitaxial layer, and a plurality of transfer gate electrodes that are each electrically connected to the floating diffusion by one of the transfer gate electrodes is provided.
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7.发明授权Photoelectric conversion device, method of manufacturing photoelectric conversion device, solid-state imaging unit, and electronic apparatus 有权光电转换装置，光电转换装置的制造方法，固态成像装置以及电子装置公开(公告)号：US09276043B2
公开(公告)日：2016-03-01
申请号：US14372702
申请日：2013-01-18
Applicant: SONY CORPORATION
Inventor： Nobutoshi Fujii , Hayato Iwamoto
IPC: H01L31/0232 , H01L31/113 , C25D5/02 , H01L27/30 , H01L27/146 , G02B3/00
CPC classification number: H01L27/307 , G02B3/0012 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14647 , H01L27/14685
Abstract: A method of manufacturing a photoelectric conversion device includes: forming a first electrode on a first surface side of a substrate that has two opposing surfaces; forming an electrode section on a second surface side of the substrate, the electrode section being used for external connection; and after forming the first electrode and the electrode section, forming an organic photoelectric conversion layer and a second electrode on the first electrode.
Abstract translation: 一种制造光电转换装置的方法包括：在具有两个相对表面的基板的第一表面侧上形成第一电极; 在所述基板的第二表面侧上形成电极部，所述电极部用于外部连接; 在形成第一电极和电极部之后，在第一电极上形成有机光电转换层和第二电极。
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8.发明授权Method of manufacturing an image sensor by joining a pixel circuit substrate and a logic circuit substrate and thereafter thinning the pixel circuit substrate 有权通过连接像素电路基板和逻辑电路基板，然后使像素电路基板变薄来制造图像传感器的方法公开(公告)号：US09263496B2
公开(公告)日：2016-02-16
申请号：US14371550
申请日：2013-01-08
Applicant: Sony Corporation
Inventor： Nobutoshi Fujii , Kenichi Aoyagi , Yoshiya Hagimoto , Hayato Iwamoto
IPC: H01L21/00 , H01L27/146 , H01L25/00 , H01L31/18 , H01L25/065
CPC classification number: H01L27/14687 , H01L25/0657 , H01L25/50 , H01L27/14634 , H01L27/1464 , H01L27/14683 , H01L27/14689 , H01L27/1469 , H01L31/1876 , H01L2924/0002 , Y02E10/50 , Y02P70/521 , H01L2924/00
Abstract: The present technology includes: bonding a device formation side of a first substrate having a first device and a device formation side of a second substrate having a second device in opposition to each other; forming a protective film on at least an edge of the second substrate having the second device; and reducing a thickness of the first substrate.
Abstract translation: 本技术包括：将具有第一器件的第一衬底的器件形成侧和具有第二器件的第二衬底的器件形成侧彼此相对地接合; 在具有第二装置的第二基板的至少边缘上形成保护膜; 并减小第一基板的厚度。
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9.发明申请METHOD OF MANUFACTURING AN IMAGE SENSOR BY JOINING A PIXEL CIRCUIT SUBSTRATE AND A LOGIC CIRCUIT SUBSTRATE AND THEREAFTER THINNING THE PIXEL CIRCUIT SUBSTRATE 审中-公开通过连接像素电路基板和逻辑电路基板制造图像传感器的方法，以及对像素电路基板进行净化的方法公开(公告)号：US20160118436A1
公开(公告)日：2016-04-28
申请号：US14989508
申请日：2016-01-06
Applicant: Sony Corporation
Inventor： Nobutoshi Fujii , Kenichi Aoyagi , Yoshiya Hagimoto , Hayato Iwamoto
IPC: H01L27/146
CPC classification number: H01L27/14687 , H01L25/0657 , H01L25/50 , H01L27/14634 , H01L27/1464 , H01L27/14683 , H01L27/14689 , H01L27/1469 , H01L31/1876 , H01L2924/0002 , Y02E10/50 , Y02P70/521 , H01L2924/00
Abstract: The present technology includes: bonding a device formation side of a first substrate having a first device and a device formation side of a second substrate having a second device in opposition to each other; forming a protective film on at least an edge of the second substrate having the second device; and reducing a thickness of the first substrate.
Abstract translation: 本技术包括：将具有第一器件的第一衬底的器件形成侧和具有第二器件的第二衬底的器件形成侧彼此相对地接合; 在具有第二装置的第二基板的至少边缘上形成保护膜; 并减小第一基板的厚度。
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公开(公告)号：US20150004738A1
公开(公告)日：2015-01-01
申请号：US14371550
申请日：2013-01-08
Applicant: Sony Corporation
Inventor： Nobutoshi Fujii , Kenichi Aoyagi , Yoshiya Hagimoto , Hayato Iwamoto
IPC: H01L27/146
CPC classification number: H01L27/14687 , H01L25/0657 , H01L25/50 , H01L27/14634 , H01L27/1464 , H01L27/14683 , H01L27/14689 , H01L27/1469 , H01L31/1876 , H01L2924/0002 , Y02E10/50 , Y02P70/521 , H01L2924/00
Abstract: The present technology includes: bonding a device formation side of a first substrate having a first device and a device formation side of a second substrate having a second device in opposition to each other; forming a protective film on at least an edge of the second substrate having the second device; and reducing a thickness of the first substrate.
Abstract translation: 本技术包括：将具有第一器件的第一衬底的器件形成侧和具有第二器件的第二衬底的器件形成侧彼此相对地接合; 在具有第二装置的第二基板的至少边缘上形成保护膜; 并减小第一基板的厚度。
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