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    SOLID-STATE IMAGING DEVICE, PRODUCTION METHOD THEREOF, AND ELECTRONIC DEVICE
    3.
    发明申请
    SOLID-STATE IMAGING DEVICE, PRODUCTION METHOD THEREOF, AND ELECTRONIC DEVICE 审中-公开
    固体成像装置，其制造方法和电子装置

    公开(公告)号：US20140327052A1

    公开(公告)日：2014-11-06

    申请号：US14244485

    申请日：2014-04-03

    Applicant: Sony Corporation

    Inventor： Keiji Tatani ,  Takuji Matsumoto ,  Yasushi Tateshita ,  Fumihiko Koga ,  Takashi Nagano ,  Takahiro Toyoshima ,  Tetsuji Yamaguchi ,  Keiichi Nakazawa ,  Naoyuki Miyashita ,  Yoshihiko Nagahama

    IPC: H01L27/146 ,  H01L27/148

    CPC classification number: H01L27/1463 ,  H01L27/14609 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14689 ,  H01L27/14831

    Abstract: Disclosed is a solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed.

    Abstract translation: 公开了一种固态成像装置，其包括像素部分，外围电路部分，在外围电路部分中的半导体衬底上形成有STI结构的第一隔离区域和形成有STI结构的第二隔离区域 半导体衬底。 埋在半导体衬底中的第二隔离区的部分比第一隔离区的半导体衬底的部分浅，第二隔离区的上表面的高度等于第一隔离区的高度。 还公开了制造固态成像装置的方法和设置有固态成像装置的电子装置。

    Solid-state image sensor, electronic apparatus, and imaging method
    4.
    发明授权
    Solid-state image sensor, electronic apparatus, and imaging method 有权

    公开(公告)号：US10181485B2

    公开(公告)日：2019-01-15

    申请号：US15128629

    申请日：2015-03-17

    Applicant: SONY CORPORATION

    Inventor： Keiji Tatani ,  Tomoharu Ogita ,  Takashi Nagano

    IPC: H01L27/146 ,  H04N5/232 ,  H04N5/369 ,  H04N5/374 ,  H04N5/378 ,  H04N9/04 ,  H04N5/3745

    Abstract: The present disclosure relates to a solid-state image sensor, an electronic apparatus and an imaging method by which specific processing other than normal processing can be sped up with reduced power consumption. The solid-state image sensor includes a pixel outputting a pixel signal used to construct an image and a logic circuit driving the pixel, and is configured of a stacked structure in which a first semiconductor substrate including a plurality of the pixels and a second semiconductor substrate including the logic circuit are joined together. In addition, among the plurality of pixels, a specific pixel is connected to the logic circuit independently of a normal pixel, the specific pixel being the pixel that outputs the pixel signal used in the specific processing other than imaging processing in which the image is imaged. The present technology can be applied to a stacked solid-state image sensor, for example.

    Solid-state imaging device, method of manufacturing the same, and electronic apparatus
    7.
    发明授权
    Solid-state imaging device, method of manufacturing the same, and electronic apparatus 有权

    公开(公告)号：US11094725B2

    公开(公告)日：2021-08-17

    申请号：US16121418

    申请日：2018-09-04

    Applicant: SONY CORPORATION

    Inventor： Yusuke Tanaka ,  Toshifumi Wakano ,  Keiji Tatani ,  Takashi Nagano ,  Hayato Iwamoto ,  Keiichi Nakazawa ,  Tomoyuki Hirano ,  Shinpei Yamaguchi ,  Shunsuke Maruyama

    IPC: H01L27/148 ,  H01L27/146

    Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device includes a silicon substrate, and at least a first photodiode formed in the silicon substrate. The device also includes an epitaxial layer with a first surface adjacent a surface of the silicon substrate, and a transfer transistor with a gate electrode that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided. A floating diffusion is formed in an epitaxial layer, and a plurality of transfer gate electrodes that are each electrically connected to the floating diffusion by one of the transfer gate electrodes is provided.

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