Invention Grant
- Patent Title: Photoelectric conversion device, method of manufacturing photoelectric conversion device, solid-state imaging unit, and electronic apparatus
- Patent Title (中): 光电转换装置，光电转换装置的制造方法，固态成像装置以及电子装置
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Application No.: US14372702Application Date: 2013-01-18
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Publication No.: US09276043B2Publication Date: 2016-03-01
- Inventor: Nobutoshi Fujii , Hayato Iwamoto
- Applicant: SONY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: SONY CORPORATION
- Current Assignee: SONY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Sheridan Ross P.C.
- Priority: JP2012-012654 20120125
- International Application: PCT/JP2013/050893 WO 20130118
- International Announcement: WO2013/111676 WO 20130801
- Main IPC: H01L31/0232
- IPC: H01L31/0232 ; H01L31/113 ; C25D5/02 ; H01L27/30 ; H01L27/146 ; G02B3/00
Abstract:
A method of manufacturing a photoelectric conversion device includes: forming a first electrode on a first surface side of a substrate that has two opposing surfaces; forming an electrode section on a second surface side of the substrate, the electrode section being used for external connection; and after forming the first electrode and the electrode section, forming an organic photoelectric conversion layer and a second electrode on the first electrode.
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