摘要:
An internal voltage generation circuit including a drive control signal generator and an internal voltage driver. The drive control signal generator generates a drive control signal in response to an active pulse signal and a drive signal. The internal voltage driver, electrically coupled to the drive control signal generator, divides a level of an internal voltage signal in response to the drive control signal to generate a division voltage signal, compares a level of the division voltage signal with a level of a reference voltage signal to generate the drive signal, and drives the internal voltage signal in response to the drive signal.
摘要:
A sense amplifier driving device may include a sense amplifier driving block configured to supply a post overdriving voltage to a pull-up power line coupled to a sense amplifier, the post overdriving voltage supplied to the sense amplifier during a post overdriving operation period in correspondence to a pull-up driving signal. The sense amplifier driving device may include a driving signal generation block configured to compare a reference voltage, set by a voltage trimming signal, with a level of a power supply voltage, and generate the pull-up driving signal for controlling whether to perform a post overdriving operation.
摘要:
A power control device and a semiconductor memory device including the same may be provided. The power control device, may include an amplifier configured to amplify an input signal having a second power-supply voltage level to a first power-supply voltage level having a voltage level different from the second power-supply voltage level. The power control device may include an output portion configured to set an output signal of the amplifier to a specific logic level upon receiving a control signal, and output the output signal having the specific logic level.
摘要:
A sense amplifier driving device, and more particularly, a technology for improving the post overdriving operation characteristic of a semiconductor device. A sense amplifier driving device includes a driving signal generation block configured to compare a reference voltage set by a voltage trimming signal and a level of a power supply voltage, and generate a pull-up driving signal for controlling an operation of a sense amplifier; and a sense amplifier driving block configured to supply a driving voltage to a pull-up power line of the sense amplifier for an active operation period in correspondence to the pull-up driving signal, the driving signal generation block including a voltage divider configured to divide the power supply voltage, and output a divided voltage; and a voltage comparison section configured to compare the reference voltage and the divided voltage, and output a control signal for controlling an overdriving operation of the sense amplifier.
摘要:
A test circuit of a semiconductor apparatus includes a test temperature information generation section, an erroneous operation prevention unit, and a refresh cycle adjustment unit. The test temperature information generation section outputs test temperature information having a plurality of bits in a test operation mode, and irregularly changes logic values of the plurality of bits and transition time points of the logic values. The erroneous operation prevention unit generates a temperature compensation signal in response to the test temperature information. The refresh cycle adjustment unit changes a cycle of a reference refresh signal in response to the temperature compensation signal, and generates a refresh signal.