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公开(公告)号：US20230323205A1
公开(公告)日：2023-10-12
申请号：US18043320
申请日：2021-07-21
发明人： Sei NEGORO , Kenji KOBAYASHI
IPC分类号： C09K13/00 , H01L21/67 , H01L21/306
CPC分类号： C09K13/00 , H01L21/6708 , H01L21/30608
摘要： According to the present invention, a substrate W is provided with a recess 95. The width of the recess 95 is smaller than the depth of the recess 95. An etching target which is at least one of a single crystal of silicon, a polysilicon and an amorphous silicon is exposed in at least a part of the upper part of a lateral surface 95s and in at least a part of the lower part of the lateral surface 95s. The etching target is etched by supplying an alkaline first etching liquid, in which an inert gas is dissolved, to the substrate W. The etching target is etched by supplying an alkaline second etching liquid, in which a dissolution gas is dissolved, and which has a dissolved oxygen concentration higher than that of the first etching liquid, to the substrate W before or after the first etching liquid is supplied to the substrate W.
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公开(公告)号：US20210313191A1
公开(公告)日：2021-10-07
申请号：US17262807
申请日：2019-07-04
发明人： Sei NEGORO , Kenji KOBAYASHI
IPC分类号： H01L21/3213 , H01L21/02 , H01L21/3205 , H01L21/67 , H01L21/687
摘要： An alkaline etchant containing a quaternary ammonium hydroxide, water, and an inhibitory substance for inhibiting contact between hydroxide ions generated from the quaternary ammonium hydroxide and objects P1 to P3 to be etched is prepared. The prepared etchant is supplied to a substrate in which the polysilicon-containing objects P1 to P3 to be etched and objects O1 to O3 not to be etched, which are different from the objects P1 to P3 to be etched, are exposed, thereby etching the objects P1 to P3 to be etched while preventing the objects O1 to O3 not to be etched from being etched.
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公开(公告)号：US20220277966A1
公开(公告)日：2022-09-01
申请号：US17676900
申请日：2022-02-22
IPC分类号： H01L21/67 , H01L21/673
摘要： A substrate treating apparatus includes a treating housing and a gas supply unit. The treating housing treats substrates in the interior thereof. The gas supply unit supplies a gas to the interior of the treating housing. The gas supply unit has a filter, a duct, and a fan. The filter is located in an upper part of the treating housing. The filter blows off the gas to the interior of the treating housing. The duct is provided in the exterior of the treating housing. The duct is connected to the filter. The fan is provided in the exterior of the treating housing. The fan is connected to the duct. The fan is located in a position not overlapping the filter in plan view. At least part of the fan is located in the same height position as the treating housing.
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公开(公告)号：US20210043468A1
公开(公告)日：2021-02-11
申请号：US17078146
申请日：2020-10-23
发明人： Sei NEGORO , Kenji KOBAYASHI
摘要： One of a setting dissolved oxygen concentration and a setting atmosphere oxygen concentration is determined based on a required etching amount. Thereafter, based on the required etching amount and the one of the determined setting dissolved oxygen concentration and setting atmosphere oxygen concentration, the other of the setting dissolved oxygen concentration and the setting atmosphere oxygen concentration is determined. A low oxygen gas whose oxygen concentration is equal or approached to the determined setting atmosphere oxygen concentration flows into a chamber that houses a substrate. Furthermore, an etching liquid whose dissolved oxygen is reduced such that its dissolved oxygen concentration is equal or approached to the determined setting dissolved oxygen concentration is supplied to the entire region of the upper surface of the substrate held horizontally.
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公开(公告)号：US20190240597A1
公开(公告)日：2019-08-08
申请号：US16260338
申请日：2019-01-29
发明人： Sei NEGORO
IPC分类号： B01D19/00 , H01L21/66 , H01L21/306 , H01L21/67
摘要： Processing liquid is stored by a supply tank. The dissolved oxygen concentration of the processing liquid is measured. The dissolved oxygen concentration of the processing liquid in the supply tank is adjusted by supplying concentration adjusting gas having a concentration of inert gas higher than that of air into the supply tank in accordance with the dissolved oxygen concentration of the processing liquid measured. The processing liquid in the supply tank is supplied to a substrate. The processing liquid that has been supplied to the substrate is collected to the supply tank. Unnecessary gas that is a gas other than the concentration adjusting gas and dissolved in the processing liquid during the processing of the substrate is decreased from the processing liquid before the processing liquid is collected to the supply tank.
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6.发明申请公开(公告)号：US20190091640A1
公开(公告)日：2019-03-28
申请号：US16114253
申请日：2018-08-28
发明人： Hajime NISHIDE , Takashi IZUTA , Takatoshi HAYASHI , Katsuhiro FUKUI , Koichi OKAMOTO , Kazuhiro FUJITA , Atsuyasu MIURA , Kenji KOBAYASHI , Sei NEGORO , Hiroki TSUJIKAWA
摘要： A chemical liquid preparation method of preparing a chemical liquid for treating a film formed on a substrate, including a gas dissolving process in which an oxygen-containing gas and an inert-gas-containing gas are dissolved in the chemical liquid by supplying the oxygen-containing gas which contains oxygen gas and the inert-gas-containing gas which contains an inert gas to a chemical liquid, wherein in the gas dissolving process, a dissolved oxygen concentration in the chemical liquid is adjusted by setting a mixing ratio between the oxygen-containing gas and the inert-gas-containing gas supplied to the chemical liquid as a mixing ratio corresponding to a predetermined target dissolved oxygen concentration.
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公开(公告)号：US20230298895A1
公开(公告)日：2023-09-21
申请号：US18043323
申请日：2021-07-14
发明人： Sei NEGORO , Kenji KOBAYASHI
IPC分类号： H01L21/306
CPC分类号： H01L21/30604
摘要： In the present invention, an alkaline first etching liquid is fed to a substrate, whereby an etching target representing a silicon monocrystal and/or polysilicon is etched. An alkaline second etching liquid is fed to the substrate after or before the first etching liquid is fed to the substrate, whereby the etching target is etched, the second etching liquid containing a compound that inhibits contact between hydroxide ions and the etching target, the difference between the maximum value and the minimum value of the etching speed with respect to the (110) face, the (100) face, and the (111) face of silicon being smaller in the second etching liquid than in the first etching liquid, and the maximum value of the etching speed being smaller in the second etching liquid than in the first etching liquid.
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公开(公告)号：US20220208563A1
公开(公告)日：2022-06-30
申请号：US17550076
申请日：2021-12-14
发明人： Sei NEGORO , Masayuki ORISAKA
IPC分类号： H01L21/67
摘要： A substrate processing apparatus includes a spin chuck that holds a substrate, and a fluid nozzle disposed to face a principal surface of the substrate which is held by the spin chuck. The fluid nozzle includes a gas discharge port from which a gas is discharged radially from the center side of the principal surface of the substrate to the peripheral edge side, and a gas flow passage through which the gas is supplied to the gas discharge port, the gas flow passage having a tubular shape along an intersecting direction with respect to the principal surface of the substrate. The gas flow passage has a gas retaining portion whose flow passage cross-sectional area is larger than other portions of the gas flow passage, and a rectifying structure provided in a portion of the gas flow passage different from the gas retaining portion, the rectifying structure that rectifies a flow of the gas in the gas flow passage.
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公开(公告)号：US20190221450A1
公开(公告)日：2019-07-18
申请号：US16232103
申请日：2018-12-26
发明人： Sei NEGORO , Kenji KOBAYASHI
CPC分类号： H01L21/6708 , B05C5/002 , H01L21/67017
摘要： One of a setting dissolved oxygen concentration and a setting atmosphere oxygen concentration is determined based on a required etching amount. Thereafter, based on the required etching amount and the one of the determined setting dissolved oxygen concentration and setting atmosphere oxygen concentration, the other of the setting dissolved oxygen concentration and the setting atmosphere oxygen concentration is determined. A low oxygen gas whose oxygen concentration is equal or approached to the determined setting atmosphere oxygen concentration flows into a chamber that houses a substrate. Furthermore, an etching liquid whose dissolved oxygen is reduced such that its dissolved oxygen concentration is equal or approached to the determined setting dissolved oxygen concentration is supplied to the entire region of the upper surface of the substrate held horizontally.
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公开(公告)号：US20240342672A1
公开(公告)日：2024-10-17
申请号：US18755680
申请日：2024-06-27
发明人： Hajime NISHIDE , Takashi IZUTA , Takatoshi HAYASHI , Katsuhiro FUKUI , Koichi OKAMOTO , Kazuhiro FUJITA , Atsuyasu MIURA , Kenji KOBAYASHI , Sei NEGORO , Hiroki TSUJIKAWA
IPC分类号： B01F35/82 , B01F23/231 , B01F23/237 , B01F35/21 , B01F35/22 , G05D11/00 , G05D21/02 , H01L21/306 , H01L21/3213 , H01L21/67 , B01F101/58
CPC分类号： B01F35/82 , B01F23/231 , B01F23/237611 , B01F23/237612 , B01F23/23765 , B01F35/2132 , B01F35/2202 , G05D11/00 , G05D21/02 , H01L21/30608 , H01L21/32134 , H01L21/67017 , H01L21/67028 , H01L21/67051 , H01L21/67075 , H01L21/6708 , B01F2101/58
摘要： A chemical liquid preparation method of preparing a TMAH-containing chemical liquid, including, a correspondence relationship preparing step of preparing a correspondence relationship between a supply flow rate ratio between an oxygen-containing gas and an inert-gas-containing gas and a convergent dissolved oxygen concentration in the TMAH-containing chemical liquid that is converged to when the oxygen-containing gas and the inert-gas-containing gas are supplied into the TMAH-containing chemical liquid; a concentration setting step of setting a target dissolved oxygen concentration in the TMAH-containing chemical liquid; a supply-flow-rate-ratio acquiring step of acquiring the supply flow rate ratio between the oxygen-containing gas and the inert-gas-containing gas corresponding to the target dissolved oxygen concentration in accordance with the correspondence relationship prepared in the correspondence relationship preparing step; and a gas supplying step of supplying the oxygen-containing gas and the inert-gas-containing gas with the supply flow rate ratio acquired in the supply-flow-rate-ratio acquiring step.
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