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公开(公告)号:US12174513B2
公开(公告)日:2024-12-24
申请号:US17101200
申请日:2020-11-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Junghyun Park , Sunil Kim , Duhyun Lee , Byunggil Jeong
Abstract: Provided is an optical modulating device including an incidence optical system, an optical modulating assembly including a plurality of nano-antennas that form a meta-grating based on a driving signal, the optical modulating assembly being configured to change a traveling direction of incidence light incident at an incidence angle from the incidence optical system based on an effective displacement of the meta-grating according to the driving signal, and an emission optical system configured to emit light steered by the optical modulating assembly, wherein the emission optical system is further configured to emit first-order diffraction light of the incidence light based on the meta-grating.
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公开(公告)号:US20240230412A1
公开(公告)日:2024-07-11
申请号:US18214026
申请日:2023-06-26
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jangwoo YOU , Jinmyoung Kim , Wontaek Seo , Byonggwon Song , Yongseop Yoon , Duhyun Lee , Choongho Rhee
IPC: G01J5/02 , G01J5/0806 , G01K7/01
CPC classification number: G01J5/023 , G01J5/0806 , G01K7/01
Abstract: An infrared sensor includes a substrate, a reflective layer on an upper surface of the substrate, and a composite layer including an absorption layer including a nanostructure and configured to absorb light energy and a sensing layer including a plurality of temperature sensing cells, where the composite layer is above the upper surface of the substrate, and where the infrared ray sensor further includes a resonant cavity between the composite layer and the reflective layer.
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公开(公告)号:US11640074B2
公开(公告)日:2023-05-02
申请号:US16932436
申请日:2020-07-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Duhyun Lee , Changgyun Shin , Sunil Kim , Byounglyong Choi
Abstract: A phase modulation active device and a method of driving the same are provided. The method may include configuring, for the phase modulation active device including a plurality of channels that modulate a phase of incident light, a phase profile indicating a phase modulation target value to be implemented by the phase modulation active device; setting a phase limit value of the phase modulation active device; generating a modified phase profile based on the phase profile by modifying the phase modulation target value, for at least one channel from the plurality of channels that meets or exceeds the phase limit value, to a modified phase modulation target value that is less than the phase limit value in the phase profile; and operating the phase modulation active device based on the modified phase profile. Thus, improved optical modulation performance may be achieved.
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公开(公告)号:US11415819B2
公开(公告)日:2022-08-16
申请号:US16860527
申请日:2020-04-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Duhyun Lee , Bochul Park , Sunil Kim , Junghyun Park , Byunggil Jeong
Abstract: A beam steering apparatus includes a substrate; at least one light source provided on the substrate; a first waveguide configured to transmit a first light beam radiated from the at least one light source; at least one beam splitter configured to split the first light beam transmitted by the first waveguide to obtain a second light beam; a second waveguide configured to receive the second light beam; and a quantum dot optical amplifier provided on the second waveguide and comprising a barrier layer, a quantum dot layer, and a wetting layer, the quantum dot optical amplifier being configured to modulate a phase of the second light beam, and to amplify an intensity of the second light beam.
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公开(公告)号:US11211761B2
公开(公告)日:2021-12-28
申请号:US16883394
申请日:2020-05-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sunil Kim , Duhyun Lee , Changbum Lee , Byounglyong Choi
Abstract: A laser beam steering device and a system including the laser beam steering device are provided. The laser beam steering device includes a refractive index change layer having a refractive index that changes based on an electrical signal; at least one antenna pattern disposed above the refractive index change layer; a wavelength selection layer disposed under the refractive index change layer and configured to correspond to a wavelength of a laser beam incident onto the laser beam steering device; and a driver configured to apply the electrical signal to the refractive index change layer.
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公开(公告)号:US11199753B2
公开(公告)日:2021-12-14
申请号:US16700234
申请日:2019-12-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sunil Kim , Changgyun Shin , Jungwoo Kim , Duhyun Lee
IPC: G02F1/29 , G02F1/13357 , G02F1/1335 , B82Y20/00
Abstract: Provided are a beam steering device and a system including the same. The beam steering device includes a conversion layer having a refractive index which is variable via electrical control and a plurality of nanoantenna pattern layers stacked on the conversion layer. The refractive index of the conversion layer is electrically changed by a driver.
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公开(公告)号:US20210349190A1
公开(公告)日:2021-11-11
申请号:US17379546
申请日:2021-07-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Byunggil Jeong , Jaeduck Jang , Duhyun Lee
Abstract: An optical scanning device includes a light source configured to emit first light in a first wavelength range and second light in a second wavelength range, a beam divider configured to allow the first light to travel in a first direction, and receive the second light, and allow the second light to travel in a second direction different from the first direction, a first optical modulator configured to receive the first light, and modulate a phase of the first light received by the first optical modulator to change a travelling direction of the first light received by the first optical modulator, and a second optical modulator configured to receive the second light, and modulate a phase of the second light received by the second optical modulator to change a travelling direction of the second light received by the second optical modulator.
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公开(公告)号:US10921618B2
公开(公告)日:2021-02-16
申请号:US16170573
申请日:2018-10-25
Inventor: Duhyun Lee , Ruzan Sokhoyan , Yu-Jung Lu , Ghazaleh Kafaie Shirmanesh , Harry Atwater , Ragip Pala , Chanwook Baik
Abstract: An optical modulating device may include a plurality of quantum dot (QD)-containing layers having QDs and a plurality of refractive index change layers. The QD-containing layers may be disposed between the refractive index change layers, respectively. The optical modulating device may be configured to modulate light-emission characteristics of the plurality of QD-containing layers. At least two of the QD-containing layers may have different central emission wavelengths. At least two of the plurality of refractive index change layers may include different materials or have different carrier densities.
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公开(公告)号:US11747614B2
公开(公告)日:2023-09-05
申请号:US17575189
申请日:2022-01-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Junghyun Park , Sunil Kim , Duhyun Lee , Byunggil Jeong
CPC classification number: G02B26/127 , G01S7/4817
Abstract: Provided are a beam scanning device and a system including the beam scanning device. The beam scanning device includes: a spatial light modulator configured to modulate a phase of a light for a corresponding pixel of a plurality of pixels; and a phase mask including a support plate arranged in an output direction of the light that is output from the spatial light modulator and a plurality of nanostructures arranged on the support plate differently for each of the plurality of pixels to control the phase of the light.
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公开(公告)号:US20220171027A1
公开(公告)日:2022-06-02
申请号:US17502885
申请日:2021-10-15
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sunil Kim , Junghyun Park , Duhyun Lee , Byunggil Jeong
IPC: G01S7/481 , G01S17/931 , H01L33/00 , G01S7/4865
Abstract: Provided is a light modulator including a first reflective layer, a cavity layer provided on the first reflective layer, and a second reflective layer provided on the cavity layer opposite to the first reflective layer, the second reflective layer including a plurality of lattice structures, wherein each lattice structure of the plurality of lattice structures have a pin diode structure and includes a p-type semiconductor layer, an intrinsic semiconductor layer, and an n-type semiconductor layer, and wherein a thickness of the p-type semiconductor layer and a thickness the n-type semiconductor layer are in a range from 8% to 16% of a thickness of the intrinsic semiconductor layer.
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