公开(公告)号：US20160056155A1

公开(公告)日：2016-02-25

申请号：US14833983

申请日：2015-08-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JAE-HO PARK ,  TAEJOONG SON ,  SANGHOON BAEK ,  JINTAE KIM ,  GIYOUNG YANG ,  HYOSIG WON

IPC: H01L27/088 ,  H01L29/417 ,  H01L29/06 ,  H01L29/08

CPC classification number: H01L29/0642 ,  H01L21/768 ,  H01L21/76816 ,  H01L21/823871 ,  H01L27/0207 ,  H01L27/092 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/41758 ,  H01L29/41791

Abstract: A semiconductor device includes a substrate having an active region, a gate structure intersecting the active region and extending in a first direction parallel to a top surface of the substrate, a first source/drain region and a second source/drain region disposed in the active region at both sides of the gate structure, respectively, and a first modified contact and a second modified contact in contact with the first source/drain region and the second source/drain region, respectively. The distance between the gate structure and the first modified contact is smaller than the distance between the gate structure and the second modified contact.

Abstract translation: 半导体器件包括具有有源区的衬底，与有源区相交且在平行于衬底顶表面的第一方向上延伸的栅极结构，设置在有源区中的第一源极/漏极区和第二源极/漏极区 分别与第一源极/漏极区域和第二源极/漏极区域接触的第一修改触点和第二修改触点。 栅极结构和第一改性接触之间的距离小于栅极结构和第二改性接触之间的距离。