公开(公告)号：US10917942B2

公开(公告)日：2021-02-09

申请号：US16045834

申请日：2018-07-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinhong Kim ,  Seyun Kim ,  Haengdeog Koh ,  Doyoon Kim ,  Hajin Kim ,  Soichiro Mizusaki ,  Minjong Bae ,  Changsoo Lee

IPC: H05B1/02 ,  H05B3/14 ,  H05B3/26

Abstract: Provided are a structure, a planar heater including the same, a heating device including the planar heater, and a method of preparing the structure. The structure includes a metal substrate, an insulating layer disposed on the metal substrate, an electrode layer disposed on the insulating layer, and an electrically conductive layer disposed on the electrode layer, wherein a difference in a coefficient of thermal expansion (CTE) between the metal substrate and the insulating layer is 4 parts per million per degree Kelvin change in temperature (ppm/K) or less.

公开(公告)号：US10652957B2

公开(公告)日：2020-05-12

申请号：US15374273

申请日：2016-12-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seyun Kim ,  Soichiro Mizusaki ,  Haengdeog Koh ,  Doyoon Kim ,  Hajin Kim ,  Changsoo Lee ,  Intaek Han

IPC: H05B3/18 ,  H05B3/14 ,  H05B3/12 ,  H05B3/26 ,  C23D5/02 ,  C23D7/00 ,  F24C7/04 ,  H05B3/20

Abstract: A heating element includes a matrix material and a nanomaterial filler, wherein the nanomaterial filler includes at least one of a nano-sheet and a nanorod.

公开(公告)号：US20180163969A1

公开(公告)日：2018-06-14

申请号：US15633832

申请日：2017-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changsoo Lee ,  Doyoon Kim ,  Hajin Kim ,  Haengdeog Koh ,  Seyun Kim ,  Jinhong Kim ,  Taehun Kim ,  Soichiro Mizusaki ,  Minjong Bae ,  Hiesang Sohn ,  Kunwoo Choi

IPC: F24C7/06 ,  F24C15/00 ,  A47J37/06 ,  H05B3/26

CPC classification number: F24C7/062 ,  A47J37/0629 ,  F24C7/046 ,  F24C7/067 ,  F24C15/007 ,  H05B3/08 ,  H05B3/145 ,  H05B3/26 ,  H05B3/62 ,  H05B2203/002 ,  H05B2214/02

Abstract: A planar heating apparatus includes a substrate, first electrodes on the substrate, second electrodes alternately arranged with the first electrodes, an electrode connector connecting end portions of the first or second electrodes to each other and a power connector connected to the electrode connector and to which a power supply is connected. The power connector extends outside of the substrate.

公开(公告)号：US20180099487A1

公开(公告)日：2018-04-12

申请号：US15723339

申请日：2017-10-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haengdeog Koh ,  Doyoon Kim ,  Seyun Kim ,  Jinhong Kim ,  Hajin Kim ,  Soichiro MIZUSAKI ,  Minjong Bae ,  Hiesang Sohn ,  Changsoo Lee

IPC: B32B17/10 ,  C01G55/00 ,  C03C8/02

CPC classification number: B32B17/10174 ,  B32B17/10944 ,  B82Y30/00 ,  C01G55/004 ,  C01P2002/02 ,  C01P2004/03 ,  C01P2004/50 ,  C01P2004/51 ,  C01P2004/62 ,  C01P2004/64 ,  C03C3/093 ,  C03C8/02 ,  C03C14/002 ,  C03C14/006 ,  C03C17/008 ,  C03C2214/02 ,  C03C2214/16 ,  C03C2217/452 ,  C03C2217/48

Abstract: A composite material structure including a matrix material layer; and a plurality of one-dimensional nanostructure distributed in the matrix material layer and having an electrical conductivity which is greater than an electrical conductivity of the matrix material layer, wherein the plurality of one-dimensional nanostructures includes a first one-dimensional nanostructure and a second one-dimensional nanostructure in contact with each other.

公开(公告)号：US11903222B2

公开(公告)日：2024-02-13

申请号：US18185817

申请日：2023-03-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yumin Kim ,  Seyun Kim ,  Jinhong Kim ,  Soichiro Mizusaki ,  Youngjin Cho

IPC: H10B63/00 ,  H10N70/00 ,  H10N70/20

CPC classification number: H10B63/84 ,  H10B63/34 ,  H10N70/011 ,  H10N70/231 ,  H10N70/841 ,  H10N70/8828 ,  H10N70/8833

Abstract: A memory device may include an insulating structure including a first surface and a protrusion portion protruding from the first surface in a first direction, a recording material layer on the insulating structure and extending along a protruding surface of the protrusion portion to cover the protrusion portion and extending onto the first surface of the insulating structure, a channel layer on the recording material layer and extending along a surface of the recording material layer, a gate insulating layer on the channel layer; and a gate electrode formed on the gate insulating layer at a location facing a second surface of the insulating structure. The second surface of the insulating structure may be a protruding upper surface of the protrusion portion.

公开(公告)号：US20230154534A1

公开(公告)日：2023-05-18

申请号：US18156543

申请日：2023-01-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngjin Cho ,  Jungho Yoon ,  Seyun Kim ,  Jinhong Kim ,  Soichiro Mizusaki

IPC: G11C13/00 ,  G06N3/04 ,  H10B63/00 ,  H10N70/00

CPC classification number: G11C13/0069 ,  G06N3/04 ,  G11C13/004 ,  H10B63/34 ,  H10N70/8833

Abstract: A vertical nonvolatile memory device including a memory cell string using a resistance change material is disclosed. Each memory cell string of the nonvolatile memory device includes a semiconductor layer extending in a first direction and having a first surface opposite a second surface, a plurality of gates and a plurality of insulators alternately arranged in the first direction and extending in a second direction perpendicular to the first direction, a gate insulating layer extending in the first direction between the plurality of gates and the semiconductor layer and between the plurality of insulators and the semiconductor layer, and a dielectric film extending in the first direction on the surface of the semiconductor layer and having a plurality of movable oxygen vacancies distributed therein.

公开(公告)号：US11605428B2

公开(公告)日：2023-03-14

申请号：US17146999

申请日：2021-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngjin Cho ,  Jungho Yoon ,  Seyun Kim ,  Jinhong Kim ,  Soichiro Mizusaki

IPC: G11C11/00 ,  G11C13/00 ,  G06N3/04 ,  H01L27/24 ,  H01L45/00

Abstract: A vertical nonvolatile memory device including a memory cell string using a resistance change material is disclosed. Each memory cell string of the nonvolatile memory device includes a semiconductor layer extending in a first direction and having a first surface opposite a second surface, a plurality of gates and a plurality of insulators alternately arranged in the first direction and extending in a second direction perpendicular to the first direction, a gate insulating layer extending in the first direction between the plurality of gates and the semiconductor layer and between the plurality of insulators and the semiconductor layer, and a dielectric film extending in the first direction on the surface of the semiconductor layer and having a plurality of movable oxygen vacancies distributed therein.

公开(公告)号：US11575084B2

公开(公告)日：2023-02-07

申请号：US16999285

申请日：2020-08-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seyun Kim ,  Jinhong Kim ,  Soichiro Mizusaki ,  Jungho Yoon ,  Youngjin Cho

IPC: H01L45/00 ,  H01L27/24

Abstract: A variable resistance memory device includes a variable resistance layer, a first conductive element, and a second conductive element. The variable resistance layer includes a first layer and a second layer. The first layer is formed of a first material. The second layer is on the first layer and formed of a second material having a density different from a density of the first material. The first conductive element and a second conductive element are located on the variable resistance layer and spaced apart from each other in order to form a current path in the variable resistance layer. The current path is in a direction perpendicular to a direction in which the first layer and the second layer are stacked.

公开(公告)号：US10893578B2

公开(公告)日：2021-01-12

申请号：US16145753

申请日：2018-09-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haengdeog Koh ,  Hajin Kim ,  Minjong Bae ,  Doyoon Kim ,  Seyun Kim ,  Jinhong Kim ,  Soichiro Mizusaki ,  Changsoo Lee

IPC: H05B3/14 ,  C08K7/00 ,  C08K3/40 ,  C08K9/06 ,  H01B1/14 ,  C08K9/04 ,  C08K3/22 ,  C03C8/00

Abstract: A composition for forming a heating element; a dried and sintered product thereof; and a method of preparing the composition for forming a heating element, the composition including a matrix particle, a composite filler, and a solvent, wherein the composite filler includes a core and a coating layer disposed on the core, the core includes a nanosheet filler, and the composition has a pH in a range of about 5 to about 9.

公开(公告)号：US20180168000A1

公开(公告)日：2018-06-14

申请号：US15836002

申请日：2017-12-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hiesang Sohn ,  Seyun Kim ,  Haengdeog Koh ,  Doyoon Kim ,  Soichiro Mizusaki ,  Jinhong Kim ,  Hajin Kim ,  Minjong Bae ,  Changsoo Lee

IPC: H05B1/02 ,  H05B3/14 ,  C03C4/14 ,  C03C14/00 ,  B29C70/02 ,  B29C70/88

CPC classification number: H05B1/0263 ,  B29C70/025 ,  B29C70/88 ,  C03C4/14 ,  C03C8/14 ,  C03C8/16 ,  C03C14/004 ,  C03C17/007 ,  C03C17/008 ,  C03C2217/452 ,  C03C2217/48 ,  H05B3/14 ,  H05B3/141 ,  H05B3/146 ,  H05B3/26 ,  H05B2203/013

Abstract: A heating element includes a plurality of matrix particles and a conductive inorganic filler disposed at interfaces between the plurality of matrix particles to provide a conductive network.