公开(公告)号：US20230238066A1

公开(公告)日：2023-07-27

申请号：US18128596

申请日：2023-03-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joonsuc JANG ,  Hyunggon KIM ,  Sangbum YUN ,  Dongwook KIM ,  Kyungsoo PARK ,  Sejin BAEK

IPC: G11C16/34 ,  G11C16/10 ,  G11C16/26 ,  G11C16/30 ,  G11C7/10 ,  G11C16/24

CPC classification number: G11C16/3459 ,  G11C16/10 ,  G11C16/26 ,  G11C16/30 ,  G11C7/1087 ,  G11C7/1048 ,  G11C7/1045 ,  G11C7/106 ,  G11C16/24

Abstract: A method of programming a nonvolatile memory device includes performing a single-pulse program operation in a program loop, determining whether a condition is satisfied in the a program loop, and performing a multi-pulse program operation in a next program loop when the condition is satisfied. The single-pulse program operation includes applying a first program pulse and applying plural verification pulses, the multi-pulse program operation includes applying a second program pulse, applying a third program pulse, and applying plural verification pulses, and each of the second program pulse and the third program pulse has a level lower than a level of the first program pulse.

公开(公告)号：US20220139473A1

公开(公告)日：2022-05-05

申请号：US17385493

申请日：2021-07-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byungsoo KIM ,  Hyunggon KIM ,  Kyungsoo PARK ,  Sejin BAEK ,  Sangbum YUN

IPC: G11C16/34 ,  G11C16/10 ,  G11C16/26 ,  G11C16/30 ,  G11C16/24 ,  G11C16/08 ,  G11C16/04

Abstract: A non-volatile memory device including a memory cell array including a plurality of cell strings, wherein each cell string of the plurality of cell stings includes a string selection transistor, a plurality of memory cells, and a ground selection transistor connected in series between a bit line and a common source line; and a control circuit configured to perform a program operation on a selected memory cell from among the plurality of memory cells and pre-charge a selected cell string including the selected memory cell in a pre-charge section included in a verification section, wherein the selected cell string is pre-charged as a first pre-charge voltage is applied to a selected bit line connected to the selected memory cell.

公开(公告)号：US20220076766A1

公开(公告)日：2022-03-10

申请号：US17201828

申请日：2021-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joonsuc JANG ,  Hyunggon KIM ,  Sangbum YUN ,  Dongwook KIM ,  Kyungsoo PARK ,  Sejin BAEK

IPC: G11C16/34 ,  G11C16/10 ,  G11C16/26 ,  G11C16/30 ,  G11C16/24 ,  G11C7/10

Abstract: A method of programming a nonvolatile memory device includes performing a single-pulse program operation in a program loop, determining whether a condition is satisfied in the a program loop, and performing a multi-pulse program operation in a next program loop when the condition is satisfied. The single-pulse program operation includes applying a first program pulse and applying plural verification pulses, the multi-pulse program operation includes applying a second program pulse, applying a third program pulse, and applying plural verification pulses, and each of the second program pulse and the third program pulse has a level lower than a level of the first program pulse.