公开(公告)号：US12141453B2

公开(公告)日：2024-11-12

申请号：US18130000

申请日：2023-04-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Rowen Alphonso Pereira ,  Chandrashekhar Mallikarjuna Joshi ,  Saugata Das Purkayastha

IPC: G06F12/02 ,  G06F3/06

Abstract: In a method of organizing data during refresh cycles of a memory device, a read request is sent to a non-volatile flash memory including a plurality of source blocks and a plurality of destination blocks. Data of the plurality of source blocks are read upon sending the read request. The frequency of bit error rate (BER) for the data stored in the plurality of source blocks is identified. The data within the plurality of source blocks are grouped and segregated based on the frequency of BER and a threshold value. The plurality of source blocks and the plurality of destination blocks are refreshed by moving the data present in the plurality of source blocks to respective destination blocks based on the segregated data and moving data from the respective destination blocks to other respective destination blocks.

公开(公告)号：US11550724B2

公开(公告)日：2023-01-10

申请号：US17039268

申请日：2020-09-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Saugata Das Purkayastha

IPC: G06F12/08 ,  G06F12/0882 ,  G06F12/0868 ,  G06F13/16 ,  G06F12/02

Abstract: The present disclosure provides a method of logical to physical mapping for a data-storage device comprising a non-volatile memory device. The method comprises maintaining a first type of information representing at least a part of a logical-to-physical address translation map. Further, the method comprises maintaining a second type of information pertaining to the logical-to-physical translation map as a part of a physical page. Further, the method comprises completing a logical-to-physical mapping based on the first and second type of information to thereby determine a physical location, within one or more of the physical pages, of the data stored in each logical page.

公开(公告)号：US11789858B2

公开(公告)日：2023-10-17

申请号：US17060686

申请日：2020-10-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Saugata Das Purkayastha ,  Suresh Vishnoi

IPC: G06F12/084 ,  G06F12/02 ,  G06F12/0804 ,  G06F12/1081 ,  G06F13/16 ,  G06F13/42 ,  G06F12/0891

CPC classification number: G06F12/0238 ,  G06F12/084 ,  G06F12/0804 ,  G06F12/0891 ,  G06F12/1081 ,  G06F13/1673 ,  G06F13/4221 ,  G06F2213/0026

Abstract: A method for performing a write operation includes selecting, by a host, at least a free write buffer from a plurality of write buffers of a shared memory buffer (SMB) by accessing a cache structure within the SMB for tracking the free write buffer; sending, by the host, at least a logical address accessed from the cache structure with respect to the selected write buffer to issue a write-command to a non-volatile memory; receiving a locking instruction of the selected write buffer from the non-volatile memory; updating a status of the selected write buffer within the cache structure based on the received locking instruction; and allowing the non-volatile memory to extract contents of one or more locked write buffers including the selected write buffer.

公开(公告)号：US12299328B2

公开(公告)日：2025-05-13

申请号：US17878639

申请日：2022-08-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Rowen Alphonso Pereira ,  Saugata Das Purkayastha

IPC: G06F12/00 ,  G06F3/06

Abstract: A method of operating a non-volatile memory device is provided. The device includes a latch, a page buffer and blocks, each of which includes pages. The method includes: receiving a page command for a write operation corresponding to a page of one of the blocks; receiving a write command for writing data to the page buffer; latching preexisting latched data or random data generated as latched data; writing the latched data to a page of a new block from among the plurality of blocks that corresponds to a page address based on the write command; and repeatedly updating the page address and repeatedly writing the latched data to additional pages corresponding to each updated page address until each page of the new block has been written to.

公开(公告)号：US11462278B2

公开(公告)日：2022-10-04

申请号：US17000776

申请日：2020-08-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Saugata Das Purkayastha

IPC: G11C16/34 ,  G11C16/08 ,  G11C16/20 ,  G11C7/10 ,  G11C16/30 ,  G11C16/04 ,  G11C16/26 ,  G11C16/10

Abstract: Embodiments herein disclose a method for managing seed value for data scrambling in a NAND memory. The method includes detecting, by a NAND controller, a first scrambling of the data of a word line in the NAND memory. The method further includes caching, by the NAND controller, at least one of a last written data of the word line post the first scrambling for each open block in a Dynamic Random Access Memory (DRAM) for programming the word line, and a super page of the last written data of the word line in the DRAM for programming the super page. The method can be used to manage the seed value which is used for NAND page scrambling, which can reduce retention effect. As a result, the retention recycles for the NAND cells may be reduced, which may improve endurance.

公开(公告)号：US20240329842A1

公开(公告)日：2024-10-03

申请号：US18615545

申请日：2024-03-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Rowen Alphonso PEREIRA ,  Saugata Das Purkayastha ,  Kumar Abhinav ,  Deepak Kumar Pattnaik

IPC: G06F3/06

CPC classification number: G06F3/0611 ,  G06F3/0619 ,  G06F3/0656 ,  G06F3/0679

Abstract: A method performed by a storage device for reducing latency of read operations performed on the storage device, includes: transmitting Host Memory Buffer (HMB) destination information to a host device. The HMB destination information relates to a read destination space reserved within a HMB of the host device. The method also includes receiving a read request from the host device for performing at least one data read operation on a memory of the storage device. The read request specifies data to be read from the memory of the storage device. The method further includes: performing the at least one data read operation on the memory for reading the data specified in the read request and transmitting the data read from the memory to the read destination space reserved within the HMB of the host device.

公开(公告)号：US11733919B2

公开(公告)日：2023-08-22

申请号：US17036872

申请日：2020-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Saugata Das Purkayastha ,  Srikanth Tumkur Shivanand

IPC: G06F3/06 ,  G06F12/02

CPC classification number: G06F3/0659 ,  G06F3/061 ,  G06F3/0679 ,  G06F12/0292 ,  G06F2212/2022

Abstract: A method for offloading a lookup operation to a NAND offload apparatus, including receiving, by the NAND offload apparatus, a NAND read command from a key-value solid-state drive (KV SSD) NAND interface, wherein the NAND offload apparatus is connected between the KV SSD NAND interface and a NAND device using a NAND bus; determining whether the NAND read command includes an information element indicating an indirect read operation; based on the NAND read command including the information element, performing the indirect read operation by the NAND offload apparatus; and based on the NAND read command not including the information element: passing, by the NAND offload apparatus, the NAND read command to the NAND device through the NAND bus, and configuring, by the NAND offload apparatus, a switch an output gate to pass a response message from the NAND device to the KV SSD NAND interface.