公开(公告)号：US20230378204A1

公开(公告)日：2023-11-23

申请号：US18228959

申请日：2023-08-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seoksan KIM ,  Minwoong SEO ,  Myunglae CHU ,  Jong-yeon LEE ,  Min-Jun CHOI

IPC: H01L27/146 ,  H04N25/77

CPC classification number: H01L27/14605 ,  H04N25/77

Abstract: An image sensor device including: a first digital pixel including a first photodetector and first memory cells to store a first digital signal corresponding to a first output from the first photodetector; and a second digital pixel including a second photodetector and second memory cells to store a second digital signal corresponding to a second output from the second photodetector, the second digital pixel is adjacent to one side of the first digital pixel, the first memory cells and the second memory cells are connected with a plurality of bit lines, the first memory cells are connected with a first word line and a third word line, the second memory cells are connected with a second word line and a fourth word line, the second word line is between the first and third word lines, and the third word line is between the second and fourth word lines.

公开(公告)号：US20230146645A1

公开(公告)日：2023-05-11

申请号：US17887887

申请日：2022-08-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyuk Soon CHOI ,  Sang-Su PARK ,  Hee Sung SHIM ,  Dae Kun AHN ,  Min-Jun CHOI

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14627

Abstract: An image sensor is provided. The image sensor includes a substrate including a plurality of unit pixels, each of unit pixels includes a photoelectric conversion element; a first trench formed in the substrate in a lattice shape to isolate the plurality of unit pixels; a plurality of first capacitor structures extended along a sidewall of the first trench in the first trench, including a first electrode, a second electrode, and a first dielectric layer between the first electrode and the second electrode; and a first capacitor isolation pattern at a lattice point of the first trench to isolate the plurality of first capacitor structures.

公开(公告)号：US20230039809A1

公开(公告)日：2023-02-09

申请号：US17725750

申请日：2022-04-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-Jun CHOI ,  Won Oh RYU ,  Hyeon Woo LEE ,  Gyu Hyun LIM

IPC: H01L27/146 ,  H01L23/48 ,  H01L23/00

Abstract: An image sensor comprises a first and second chips. The first chip includes a first semiconductor substrate, a photoelectric conversion layer in the first semiconductor substrate, a color filter, a micro lens, a first transistor adjacent to the photoelectric conversion layer, a first insulating layer, and a first metal layer in the first insulating layer and connected to the first transistor. The second chip includes a second insulating layer, a second semiconductor substrate, a second transistor on the second semiconductor substrate, a second metal layer in the second insulating layer and connected to a gate structure of the second transistor through a gate contact, a landing metal layer below the second metal layer, and a through via in direct contact with the landing metal layer and vertically passing through the second semiconductor substrate. A width of the through via becomes narrower as the width approaches the third surface.

公开(公告)号：US20160116443A1

公开(公告)日：2016-04-28

申请号：US14922687

申请日：2015-10-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-Jun CHOI ,  Min-Woo SONG

IPC: G01N29/12 ,  G01N29/44 ,  H04R29/00

CPC classification number: G01H13/00 ,  G01M3/24

Abstract: An electronic device is provided. The electronic device includes a speaker configured to output a reference signal in the form of a sound and a processor configured to calculate a lowest resonant frequency from a signal sensed by feeding back the reference signal transmitted to the speaker and to determine whether the electronic device is waterproofed based on the calculated lowest resonant frequency.

Abstract translation: 提供电子设备。 该电子设备包括：扬声器，被配置为输出声音形式的参考信号;以及处理器，被配置为通过反馈传输到扬声器的参考信号而感测到的信号来计算最低谐振频率，并且确定电子设备是否是 基于计算出的最低谐振频率进行防水。