公开(公告)号：US20200312783A1

公开(公告)日：2020-10-01

申请号：US16668289

申请日：2019-10-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoung-Gug MIN ,  Younhee KANG ,  Min-Woo SONG

IPC: H01L23/552 ,  H01L25/00 ,  H01L23/498

Abstract: A semiconductor package including a first semiconductor chip having an upper surface, a lower surface that is opposite to the upper surface, and a sidewall between the upper surface and the lower surface; a capping insulation layer covering the upper surface and the sidewall of the first semiconductor chip; and a shielding layer on the capping insulation layer, wherein a lower portion of the capping insulation layer includes a laterally protruding capping protrusion contacting a lower surface of the shielding layer.

公开(公告)号：US20130280881A1

公开(公告)日：2013-10-24

申请号：US13923470

申请日：2013-06-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Weon-Hong KIM ,  Min-Woo SONG ,  Jung-Min PARK

IPC: H01L49/02

CPC classification number: H01L28/60 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3142 ,  H01L21/31604 ,  H01L21/31641 ,  H01L27/10852 ,  H01L28/40

Abstract: A semiconductor device including a substrate; a bottom electrode on the substrate; a first dielectric layer on the bottom electrode, the first dielectric layer including a first metal oxide including at least one of Hf, Al, Zr, La, Ba, Sr, Ti, and Pb; a second dielectric layer on the first dielectric layer, the second dielectric layer including a second metal oxide including at least one of Hf, Al, Zr, La, Ba, Sr, Ti, and Pb, wherein the first metal oxide and the second metal oxide are different materials; a third dielectric layer on the second dielectric layer, the third dielectric layer including a metal carbon oxynitride; and an upper electrode on the third dielectric layer.

Abstract translation: 一种包括衬底的半导体器件; 基底上的底电极; 所述第一电介质层包括包含Hf，Al，Zr，La，Ba，Sr，Ti和Pb中的至少一种的第一金属氧化物; 在所述第一电介质层上的第二电介质层，所述第二电介质层包括包含Hf，Al，Zr，La，Ba，Sr，Ti和Pb中的至少一种的第二金属氧化物，其中所述第一金属氧化物和所述第二金属 氧化物是不同的材料; 第二电介质层上的第三电介质层，第三电介质层包括金属碳氮氧化物; 以及第三电介质层上的上电极。

公开(公告)号：US20170230747A1

公开(公告)日：2017-08-10

申请号：US15328230

申请日：2014-12-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-Woo SONG

IPC: H04R1/10

CPC classification number: H04R1/1083 ,  H04R1/10 ,  H04R1/1041 ,  H04R3/00 ,  H04R5/04 ,  H04R2201/107 ,  H04R2420/03 ,  H04R2420/05

Abstract: An earset, according to various examples, comprises: an electronic device connection unit having a microphone terminal connected to a microphone of the earset, an audio ground terminal connected to an audio ground of the earset, a right speaker terminal, and a left speaker terminal; and a switch for allowing, according to a voltage of the microphone terminal, a right speaker and a left speaker of the earset to be mutually connected with one of the right speaker terminal and the left speaker terminal, and the other one of the right speaker terminal and the left speaker terminal to be connected with a shield ground of the earset. Other examples are possible.

公开(公告)号：US20160116443A1

公开(公告)日：2016-04-28

申请号：US14922687

申请日：2015-10-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-Jun CHOI ,  Min-Woo SONG

IPC: G01N29/12 ,  G01N29/44 ,  H04R29/00

CPC classification number: G01H13/00 ,  G01M3/24

Abstract: An electronic device is provided. The electronic device includes a speaker configured to output a reference signal in the form of a sound and a processor configured to calculate a lowest resonant frequency from a signal sensed by feeding back the reference signal transmitted to the speaker and to determine whether the electronic device is waterproofed based on the calculated lowest resonant frequency.

Abstract translation: 提供电子设备。 该电子设备包括：扬声器，被配置为输出声音形式的参考信号;以及处理器，被配置为通过反馈传输到扬声器的参考信号而感测到的信号来计算最低谐振频率，并且确定电子设备是否是 基于计算出的最低谐振频率进行防水。

公开(公告)号：US20220199549A1

公开(公告)日：2022-06-23

申请号：US17693545

申请日：2022-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoung-Gug MIN ,  Younhee KANG ,  Min-Woo SONG

IPC: H01L23/552 ,  H01L23/498 ,  H01L25/00

Abstract: A semiconductor package including a first semiconductor chip having an upper surface, a lower surface that is opposite to the upper surface, and a sidewall between the upper surface and the lower surface; a capping insulation layer covering the upper surface and the sidewall of the first semiconductor chip; and a shielding layer on the capping insulation layer, wherein a lower portion of the capping insulation layer includes a laterally protruding capping protrusion contacting a lower surface of the shielding layer.

公开(公告)号：US20200073460A1

公开(公告)日：2020-03-05

申请号：US16466089

申请日：2017-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Min LEE ,  Kwang-Eun GO ,  Kang-Sik KIM ,  Dong-Sub KIM ,  Young-San KIM ,  Won-Min KIM ,  Young-Hyun BAN ,  Min-Woo SONG ,  Chung-Hyo JUNG

IPC: G06F1/3206 ,  G06F1/08 ,  G06F1/324 ,  G06F1/20 ,  G06F1/3234

Abstract: Various embodiments of the present invention relate to an electronic device and a method for controlling heat generated on the surface of the electronic device. The electronic device may comprise a display and a processor, wherein the processor: displays, on the display, graphic elements at the request of a first application; during a first period of time, acquires first information corresponding to the graphic performance of the displayed graphic elements, and identifies a clock control level for controlling operation performance according to execution of the first application; and during a second period of time following the first period of time, identifies a clock value corresponding to the identified clock control level on the basis of the acquired first information, and controls the operation performance according to execution of the first application by using the identified clock value.