公开(公告)号：US20230146645A1

公开(公告)日：2023-05-11

申请号：US17887887

申请日：2022-08-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyuk Soon CHOI ,  Sang-Su PARK ,  Hee Sung SHIM ,  Dae Kun AHN ,  Min-Jun CHOI

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14627

Abstract: An image sensor is provided. The image sensor includes a substrate including a plurality of unit pixels, each of unit pixels includes a photoelectric conversion element; a first trench formed in the substrate in a lattice shape to isolate the plurality of unit pixels; a plurality of first capacitor structures extended along a sidewall of the first trench in the first trench, including a first electrode, a second electrode, and a first dielectric layer between the first electrode and the second electrode; and a first capacitor isolation pattern at a lattice point of the first trench to isolate the plurality of first capacitor structures.