公开(公告)号：US20230378204A1

公开(公告)日：2023-11-23

申请号：US18228959

申请日：2023-08-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seoksan KIM ,  Minwoong SEO ,  Myunglae CHU ,  Jong-yeon LEE ,  Min-Jun CHOI

IPC: H01L27/146 ,  H04N25/77

CPC classification number: H01L27/14605 ,  H04N25/77

Abstract: An image sensor device including: a first digital pixel including a first photodetector and first memory cells to store a first digital signal corresponding to a first output from the first photodetector; and a second digital pixel including a second photodetector and second memory cells to store a second digital signal corresponding to a second output from the second photodetector, the second digital pixel is adjacent to one side of the first digital pixel, the first memory cells and the second memory cells are connected with a plurality of bit lines, the first memory cells are connected with a first word line and a third word line, the second memory cells are connected with a second word line and a fourth word line, the second word line is between the first and third word lines, and the third word line is between the second and fourth word lines.

公开(公告)号：US20210091129A1

公开(公告)日：2021-03-25

申请号：US16882597

申请日：2020-05-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEOKSAN KIM ,  MINWOONG SEO ,  Myunglae CHU ,  Jong-yeon LEE ,  MIN-JUN CHOI

IPC: H01L27/146 ,  H04N5/3745

Abstract: An image sensor device including: a first digital pixel including a first photodetector and first memory cells to store a first digital signal corresponding to a first output from the first photodetector; and a second digital pixel including a second photodetector and second memory cells to store a second digital signal corresponding to a second output from the second photodetector, the second digital pixel is adjacent to one side of the first digital pixel, the first memory cells and the second memory cells are connected with a plurality of bit lines, the first memory cells are connected with a first word line and a third word line, the second memory cells are connected with a second word line and a fourth word line, the second word line is between the first and third word lines, and the third word line is between the second and fourth word lines.