IMAGE SENSOR DEVICE
    1.
    发明申请

    公开(公告)号:US20210091129A1

    公开(公告)日:2021-03-25

    申请号:US16882597

    申请日:2020-05-25

    Abstract: An image sensor device including: a first digital pixel including a first photodetector and first memory cells to store a first digital signal corresponding to a first output from the first photodetector; and a second digital pixel including a second photodetector and second memory cells to store a second digital signal corresponding to a second output from the second photodetector, the second digital pixel is adjacent to one side of the first digital pixel, the first memory cells and the second memory cells are connected with a plurality of bit lines, the first memory cells are connected with a first word line and a third word line, the second memory cells are connected with a second word line and a fourth word line, the second word line is between the first and third word lines, and the third word line is between the second and fourth word lines.

    IMAGE SENSOR AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20200219914A1

    公开(公告)日:2020-07-09

    申请号:US16589488

    申请日:2019-10-01

    Abstract: An image sensor and a method of fabricating the same, the image sensor including a semiconductor substrate having a first surface and a second surface facing each other; a first photoelectric conversion part disposed on the second surface of the semiconductor substrate; a first floating diffusion region provided in the semiconductor substrate adjacent to the first surface; a first interlayered insulating layer covering the first surface; a first channel pattern on the first interlayered insulating layer; and a first transfer gate electrode disposed adjacent to the first channel pattern and that controls transfer of charge generated in the first photoelectric conversion part to the first floating diffusion region through the first channel pattern.

Patent Agency Ranking