公开(公告)号：US20200219914A1

公开(公告)日：2020-07-09

申请号：US16589488

申请日：2019-10-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHANGHWA KIM ,  KWANSIK KIM ,  YOONKYOUNG KIM ,  SANG-SU PARK ,  BEOMSUK LEE ,  TAEYON LEE ,  MIN-JUN CHOI

IPC: H01L27/146 ,  H01L27/148

Abstract: An image sensor and a method of fabricating the same, the image sensor including a semiconductor substrate having a first surface and a second surface facing each other; a first photoelectric conversion part disposed on the second surface of the semiconductor substrate; a first floating diffusion region provided in the semiconductor substrate adjacent to the first surface; a first interlayered insulating layer covering the first surface; a first channel pattern on the first interlayered insulating layer; and a first transfer gate electrode disposed adjacent to the first channel pattern and that controls transfer of charge generated in the first photoelectric conversion part to the first floating diffusion region through the first channel pattern.