公开(公告)号：US20170170054A1

公开(公告)日：2017-06-15

申请号：US15444567

申请日：2017-02-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JU-YOUN KIM ,  MIN-CHOUL KIM ,  BAIK-MIN SUNG ,  SANG-HYUN WOO

IPC: H01L21/762 ,  H01L27/088

CPC classification number: H01L21/76224 ,  H01L21/76232 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/0653 ,  H01L29/66545 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor device includes a fin protruding from a substrate and extending in a first direction, first and second gate structures intersecting the fin, a recess formed in the fin between the first and second gate structures, a device isolation layer which fills the recess, and which has an upper surface protruded outwardly from the fin and disposed to be coplanar with upper surfaces of the first and second gate structures, a liner formed along a side walls of the device isolation layer protruded outwardly from the fin and a source/drain region disposed at both sides of the recess and spaced apart from the device isolation layer.