公开(公告)号：US20240135523A1

公开(公告)日：2024-04-25

申请号：US18486350

申请日：2023-10-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taesoo Shin ,  Seulgi Ok ,  Kibum Lee ,  Sungwook Hwang

IPC: G06T7/00

CPC classification number: G06T7/0004 ,  G06T2207/30148

Abstract: A method of predicting a semiconductor yield includes receiving wafer level data generated by measuring a plurality of wafers, generating a plurality of virtual chips corresponding to the plurality of wafers based on the wafer level data, mapping a test result of the plurality of wafers to the plurality of virtual chips, computing a defect rate of the plurality of virtual chips according to defects based on a result of the mapping, and computing a defect index of the equipment based on the defect rate.

公开(公告)号：US20240127426A1

公开(公告)日：2024-04-18

申请号：US18204033

申请日：2023-05-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungwook Hwang ,  Tae Soo Shin ,  Seulgi Ok ,  Kibum Lee

IPC: G06T7/00 ,  G06T7/60 ,  G06V10/141 ,  G06V10/60

CPC classification number: G06T7/001 ,  G06T7/60 ,  G06V10/141 ,  G06V10/60 ,  G06T2207/10061 ,  G06T2207/30148

Abstract: A test device includes a memory and a controller. The memory stores reference data including a reference image obtained by photographing a reference pattern on a first semiconductor sample, a first height of the reference pattern, a first shadow length of the reference pattern, and a reference value that represents a correlation between the first height and the first shadow length. The controller receives an image obtained by photographing a pattern on a second semiconductor sample, measures a second shadow length of the pattern from the image, and calculates a second height of the pattern from the second shadow length based on the reference data.

公开(公告)号：US11715666B2

公开(公告)日：2023-08-01

申请号：US17574665

申请日：2022-01-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Hyun Im ,  Kibum Lee ,  Daehyun Kim ,  Ju Hyung We ,  Sungmi Yoon

IPC: H01L21/762 ,  H01L21/763 ,  H01L21/02 ,  H01L27/146 ,  H01L29/78 ,  H01L21/8238 ,  H01L21/8234 ,  H10B12/00 ,  H10B41/27 ,  H10B43/27

CPC classification number: H01L21/76224 ,  H01L21/02238 ,  H01L21/02667 ,  H01L21/763 ,  H01L21/8238 ,  H01L21/823481 ,  H01L21/823878 ,  H01L27/1463 ,  H01L29/785 ,  H10B12/053 ,  H10B12/482 ,  H10B41/27 ,  H10B43/27 ,  H01L21/02532 ,  H01L21/02592

Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a semiconductor substrate that includes a trench defining an active region; a buried dielectric pattern in the trench; a silicon oxide layer between the buried dielectric pattern and an inner wall of the trench; and a polycrystalline silicon layer between the silicon oxide layer and the inner wall of the trench, wherein the polycrystalline silicon layer has a first surface in contact with the semiconductor substrate and a second surface in contact with the silicon oxide layer, and wherein the second surface includes a plurality of silicon grains that are uniformly distributed.

公开(公告)号：US11232973B2

公开(公告)日：2022-01-25

申请号：US16728348

申请日：2019-12-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Hyun Im ,  Kibum Lee ,  Daehyun Kim ,  Ju Hyung We ,  Sungmi Yoon

IPC: H01L21/762 ,  H01L21/763 ,  H01L21/02 ,  H01L27/11556 ,  H01L27/11582 ,  H01L21/8234 ,  H01L27/108 ,  H01L27/146 ,  H01L29/78 ,  H01L21/8238

Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a semiconductor substrate that includes a trench defining an active region; a buried dielectric pattern in the trench; a silicon oxide layer between the buried dielectric pattern and an inner wall of the trench; and a polycrystalline silicon layer between the silicon oxide layer and the inner wall of the trench, wherein the polycrystalline silicon layer has a first surface in contact with the semiconductor substrate and a second surface in contact with the silicon oxide layer, and wherein the second surface includes a plurality of silicon grains that are uniformly distributed.