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    Pixel array and devices including the same
    2.
    发明授权
    Pixel array and devices including the same 有权

    公开(公告)号：US12069390B2

    公开(公告)日：2024-08-20

    申请号：US17984086

    申请日：2022-11-09

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hwanwoong Kim ,  Jihun Kim ,  Jung Bin Yun ,  Seungjoon Lee ,  Hongsuk Lee

    IPC: H04N25/75 ,  H01L27/146 ,  H04N25/77

    CPC classification number: H04N25/77 ,  H01L27/1463 ,  H04N25/75

    Abstract: A pixel array including pixels arranged in a matrix shape is provided. The pixels have a same structure and are separated from each other by front deep trench isolation (FDTI). A first pixel among the pixels includes a first floating diffusion region, a first group of photoelectric conversion elements, a first group of charge transfer transistors, a first source follower transistor, and a first transistor, a second transistor, and a first reset transistor connected in series between the first floating diffusion region and a voltage supply line. One of the first transistor, the second transistor, and the first reset transistor is formed in a first sub-pixel region. At least another one of the first transistor, the second transistor, and the first reset transistor is formed in a second sub-pixel region. The first sub-pixel region and the second sub-pixel region are separated from each other by the FDTI.

    SEMICONDUCTOR DEVICES HAVING CONTACT PLUGS
    5.
    发明公开
    SEMICONDUCTOR DEVICES HAVING CONTACT PLUGS 审中-公开

    公开(公告)号：US20240260250A1

    公开(公告)日：2024-08-01

    申请号：US18506405

    申请日：2023-11-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jinseong Lee ,  Jihye Kwon ,  Jihun Kim ,  Kyosuk Chae

    IPC: H10B12/00

    CPC classification number: H10B12/0335 ,  H10B12/482 ,  H10B12/315

    Abstract: A semiconductor device includes a substrate including an active region. A gate structure is disposed in the substrate and extends to traverse the active region in a first horizontal direction. Bit line structures traverse the gate structure and extend in a second horizontal direction, intersecting the first horizontal direction. Fence structures are disposed between the bit line structures. The fence structures are spaced apart from each other in the second horizontal direction. A contact plug is disposed between the bit line structures and between the fence structures. The contact plug includes first and second side surfaces that are spaced apart from each other in the second horizontal direction and third and fourth side surfaces that are spaced apart from each other in the first horizontal direction. A doping concentration of the first side surface is higher than a doping concentration of the third side surface.

    Image sensor including auto-focus pixels that receive the same transmission control signal
    6.
    发明授权
    Image sensor including auto-focus pixels that receive the same transmission control signal 有权

    公开(公告)号：US11863893B2

    公开(公告)日：2024-01-02

    申请号：US17743724

    申请日：2022-05-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jungwook Lim ,  Jihun Kim

    IPC: H04N25/704 ,  H04N25/11 ,  H04N25/77 ,  H04N25/766 ,  H01L27/146

    CPC classification number: H04N25/704 ,  H04N25/11 ,  H04N25/77

    Abstract: An image sensor including: a pixel array including first and second pixel groups, each of the first and second pixel groups includes of pixels arranged in rows and columns; and a row driver configured to provide transmission control signals to the pixel array, the first pixel group includes a first auto-focus (AF) pixel including photodiodes arranged in a first direction, the pixels of the first pixel group output a pixel signal through a first column line, and the second pixel group includes a second AF pixel including photodiodes arranged in a second direction perpendicular to the first direction, the pixels of the second pixel group output a pixel signal through a second column line, and the first AF pixel of the first pixel group and the second AF pixel of the second pixel group receive same transmission control signals.

    Image sensor with pixel separation structure
    9.
    发明授权
    Image sensor with pixel separation structure 有权

    公开(公告)号：US12170296B2

    公开(公告)日：2024-12-17

    申请号：US17491705

    申请日：2021-10-01

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seungjoon Lee ,  Jung Bin Yun ,  Kyungho Lee ,  Jihun Kim ,  Junghyung Pyo

    IPC: H01L27/146

    Abstract: Disclosed is an image sensor comprising a semiconductor substrate that includes first through fourth pixel regions, each including first through fourth photoelectric conversion sections, and a pixel separation structure disposed in the semiconductor substrate and separating the first through fourth pixel regions from each other. The second pixel region is spaced apart in a first direction from the first pixel region. The fourth pixel region is spaced apart in a second direction from the first pixel region. The second direction intersects the first direction. The semiconductor substrate includes first impurity sections disposed on corresponding central portions of the first through fourth pixel regions, and a second impurity section disposed between the second and fourth pixel regions. Impurities doped in the first impurity sections have a conductivity type different from that of impurities doped in the second impurity section.

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