公开(公告)号：US11863893B2

公开(公告)日：2024-01-02

申请号：US17743724

申请日：2022-05-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungwook Lim ,  Jihun Kim

IPC: H04N25/704 ,  H04N25/11 ,  H04N25/77 ,  H04N25/766 ,  H01L27/146

CPC classification number: H04N25/704 ,  H04N25/11 ,  H04N25/77

Abstract: An image sensor including: a pixel array including first and second pixel groups, each of the first and second pixel groups includes of pixels arranged in rows and columns; and a row driver configured to provide transmission control signals to the pixel array, the first pixel group includes a first auto-focus (AF) pixel including photodiodes arranged in a first direction, the pixels of the first pixel group output a pixel signal through a first column line, and the second pixel group includes a second AF pixel including photodiodes arranged in a second direction perpendicular to the first direction, the pixels of the second pixel group output a pixel signal through a second column line, and the first AF pixel of the first pixel group and the second AF pixel of the second pixel group receive same transmission control signals.

公开(公告)号：US20230299116A1

公开(公告)日：2023-09-21

申请号：US18123073

申请日：2023-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungwook Lim ,  Joongseok Park ,  Dongsuk Yoo ,  Seojoo Kim ,  Soeun Park ,  Sunghyuck Cho

IPC: H01L27/146

CPC classification number: H01L27/14654 ,  H01L27/14645 ,  H01L27/14621 ,  H01L27/1463

Abstract: Disclosed is an image sensor including a semiconductor substrate including first and second pixel regions, first and second photoelectric conversion elements on the first and second pixel regions, a pixel isolation structure between the first and second photoelectric conversion elements, a first floating diffusion region on the first pixel region, a first transfer gate electrode between the first photoelectric conversion element and the first floating diffusion region, a second floating diffusion region on the second pixel region, a second transfer gate electrode between the second photoelectric conversion element and the second floating diffusion region, a first charge storage region on the first pixel region, a second charge storage region on the second pixel region, a first switching element between the first floating diffusion region and the first charge storage region, and a second switching element between the second floating diffusion region and the second charge storage region.

公开(公告)号：US11943552B2

公开(公告)日：2024-03-26

申请号：US17719649

申请日：2022-04-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungwook Lim

IPC: H04N25/705 ,  H01L27/146

CPC classification number: H04N25/705 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14643

Abstract: A depth sensor and an image detecting system including the same are provided. The depth sensor includes a pixel that generates an image signal based on a sensed light. The pixel includes a first photo transistor that integrates first charges based on a first photo gate signal toggling during an integration period, a second photo transistor that integrates second charges based on a second photo gate signal toggling during the integration period, a first transfer transistor that transfers the first charges to a first floating diffusion node based on a first transfer gate signal, a second transfer transistor that transfers the second charges to a second floating diffusion node based on the first transfer gate signal, and a switch that is connected with the first photo transistor, the second photo transistor, the first transfer transistor, and the second transfer transistor.

公开(公告)号：US11950011B2

公开(公告)日：2024-04-02

申请号：US18051606

申请日：2022-11-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungwook Lim

IPC: H04N25/77 ,  H04N25/59 ,  H04N25/771 ,  H04N25/772 ,  H04N25/773

CPC classification number: H04N25/77 ,  H04N25/772 ,  H04N25/773

Abstract: In an image sensor including a pixel array having a plurality of pixels, each of the plurality of pixels includes: a first photodiode; a second photodiode having a larger light-receiving area than the first photodiode; a first floating diffusion node where charge generated in the first photodiode is accumulated; a second floating diffusion node where charge generated in the second photodiode is accumulated; a first capacitor accumulating charge overflowing from the first photodiode; a first driving transistor configured to generate an output signal corresponding to a voltage of the second floating diffusion node; and a second capacitor storing an amount of overflow charges according to an overflow operation for accumulating the overflowing charge and storing an amount of reset charges according to a reset operation for resetting the first floating diffusion node.

公开(公告)号：US11683603B2

公开(公告)日：2023-06-20

申请号：US17529744

申请日：2021-11-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwanwoong Kim ,  Jihun Kim ,  Jueun Park ,  Jungwook Lim ,  Youjin Jeong ,  Taesub Jung

IPC: H04N25/63 ,  H04N25/62

CPC classification number: H04N25/63 ,  H04N25/62

Abstract: An image sensor includes: a pixel array including pixels and reference pixels; an analog sensing circuit configured to sense signals from the pixels and the reference pixels; and a digital logic circuit configured to receive the sensed signals from the analog sensing circuit and configured to compensate signals corresponding to the pixels from among the sensed signals by using signals corresponding to the reference pixels from among the sensed signals, wherein each of the reference pixels is at least partially surround by the pixels.

公开(公告)号：US11317049B2

公开(公告)日：2022-04-26

申请号：US16690741

申请日：2019-11-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungwook Lim

IPC: H04N5/378 ,  H04N3/14 ,  H01L27/146 ,  H04N5/374

Abstract: An image sensor device includes a pixel that converts a light signal into an electrical signal and outputs the converted electrical signal through a data line, a current bias element that is connected between the data line and a ground voltage, and a self-pull-down circuit that is connected between the data line and the ground voltage and pulls down the data line based on an output voltage of the data line.

公开(公告)号：US12219279B2

公开(公告)日：2025-02-04

申请号：US18513747

申请日：2023-11-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungwook Lim ,  Jihun Kim

IPC: H04N25/704 ,  H01L27/146 ,  H04N25/11 ,  H04N25/76 ,  H04N25/77

Abstract: An image sensor including: a pixel array including first and second pixel groups, each of the first and second pixel groups includes of pixels arranged in rows and columns; and a row driver configured to provide transmission control signals to the pixel array, the first pixel group includes a first auto-focus (AF) pixel including photodiodes arranged in a first direction, the pixels of the first pixel group output a pixel signal through a first column line, and the second pixel group includes a second AF pixel including photodiodes arranged in a second direction perpendicular to the first direction, the pixels of the second pixel group output a pixel signal through a second column line, and the first AF pixel of the first pixel group and the second AF pixel of the second pixel group receive same transmission control signals.

公开(公告)号：US20240430587A1

公开(公告)日：2024-12-26

申请号：US18672977

申请日：2024-05-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungwook Lim

IPC: H04N25/59 ,  H04N25/76 ,  H04N25/78

Abstract: An image sensor includes a first photoelectric element, a second photoelectric element having a larger receiving area than that of the first photoelectric element, a first floating diffusion region in which charges generated by the first photoelectric element are stored, a second floating diffusion region, in which charges generated by the second photoelectric element are stored, and which is connected to a gate of a driving transistor, a capacitor selectively connected to the first floating diffusion region based on a readout mode and configured to store charges overflowing from the first photoelectric element, a third floating diffusion region connected to the first and second floating diffusion regions through first and second switch transistors, respectively, a reset transistor, a first end of which is selectively connected to one of plural voltage nodes through a reset node, and a second end of which is connected to the third floating diffusion region.

公开(公告)号：US11619546B2

公开(公告)日：2023-04-04

申请号：US16869731

申请日：2020-05-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungwook Lim ,  Seungki Jung

IPC: A61B5/00 ,  G01R31/52 ,  G01J1/44

Abstract: A sensing module is provided. The sensing module includes a light source, unit pixels, a leakage current detector, and a pixel driving circuit. The light source outputs an optical signal. The unit pixels are connected to row lines and column lines, and sense the optical signal to generate a pixel signal. The leakage current detector compares an amplitude of the pixel signal generated by the unit pixels with a first reference voltage, in a state in which the light source is deactivated, to detect a unit pixel, among the unit pixels, in which a leakage current equal to or greater than a threshold value is generated. The pixel driving circuit deactivates the detected unit pixel in a state in which the light source is activated.

公开(公告)号：US20220377267A1

公开(公告)日：2022-11-24

申请号：US17743724

申请日：2022-05-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungwook Lim ,  Jihun Kim

IPC: H04N5/369

Abstract: An image sensor including: a pixel array including first and second pixel groups, each of the first and second pixel groups includes of pixels arranged in rows and columns; and a row driver configured to provide transmission control signals to the pixel array, the first pixel group includes a first auto-focus (AF) pixel including photodiodes arranged in a first direction, the pixels of the first pixel group output a pixel signal through a first column line, and the second pixel group includes a second AF pixel including photodiodes arranged in a second direction perpendicular to the first direction, the pixels of the second pixel group output a pixel signal through a second column line, and the first AF pixel of the first pixel group and the second AF pixel of the second pixel group receive same transmission control signals.