公开(公告)号：US20240388815A1

公开(公告)日：2024-11-21

申请号：US18685715

申请日：2022-08-22

Applicant: NIKON CORPORATION

Inventor： Shutaro KATO ,  Osamu SARUWATARI ,  Wataru FUNAMIZU

IPC: H04N25/772 ,  H04N23/745 ,  H04N25/531 ,  H04N25/62 ,  H04N25/778 ,  H04N25/79

Abstract: An imaging element includes a first semiconductor substrate having a pixel unit in which a plurality of pixels are disposed, each pixel including a photoelectric conversion unit that converts light to an electric charge, a retention unit that retains the electric charge, a first transfer unit that transfers the electric charge from the photoelectric conversion unit to the retention unit, an accumulation unit that accumulates the electric charge, a second transfer unit that transfers the electric charge from the retention unit to the accumulation unit, and an output unit that outputs a signal based on the electric charge and a second semiconductor substrate having a control circuit unit that is disposed at a position opposing the pixel unit and that controls the first transfer unit and/or the second transfer unit, and a peripheral circuit unit that is disposed outside of the control circuit unit and that controls the output unit.

公开(公告)号：US20240305905A1

公开(公告)日：2024-09-12

申请号：US18666112

申请日：2024-05-16

Applicant: Sony Semiconductor Solutions Corporation

Inventor： Junichiro Kusuda

IPC: H04N25/62 ,  H04N25/75 ,  H04N25/77

CPC classification number: H04N25/62 ,  H04N25/75 ,  H04N25/77

Abstract: An overlight amount detection circuit (1) according to the present disclosure includes a MOS transistor and a high-impedance element (Ca). A source of the MOS transistor (Mn1) is connected to a vertical signal line (VSL) of an image sensor. The high-impedance element (Ca) is connected to a drain of the MOS transistor (Mn1). The overlight amount detection circuit (1) detects a potential fluctuation of the vertical signal line (VSL) based on a potential defined by a gate potential of the MOS transistor (Mn1), and outputs a potential of a contact point between the drain of the MOS transistor (Mn1) and the high-impedance element (Ca) as a signal indicating an overlight amount detection result.

公开(公告)号：US20240297202A1

公开(公告)日：2024-09-05

申请号：US18251630

申请日：2021-11-04

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： YILUN HE ,  TAKASHI MACHIDA

IPC: H01L27/148 ,  H01L27/146 ,  H04N25/62

CPC classification number: H01L27/14818 ,  H01L27/14689 ,  H04N25/62

Abstract: To prevent leakage of incident light to a charge holding unit of an imaging element. The pixel includes a photoelectric conversion unit disposed on a side of the light receiving face of the semiconductor substrate, a charge holding unit disposed on a side different from the light receiving face of the semiconductor substrate, and a charge transfer unit that transfers a charge to the charge holding unit, and is configured to have a rectangular shape in a light receiving face view. The charge holding unit light shielding film is configured to have a band shape adjacent to three sides including a first side that is one of the sides of the rectangle and parallel to the first side in a light receiving face view, is adjacent to a semiconductor region including the charge transfer unit in a light receiving face view, and is disposed in the pixel between the photoelectric conversion unit and the charge holding unit to shield incident light. The charge transfer unit light shielding film is configured to have a band shape adjacent to three sides including a second side that is a side facing the first side in a light receiving face view and parallel to the second side, and is configured to be disposed in the pixel between the photoelectric conversion unit and the charge transfer unit to shield incident light and have a shape which has an end portion overlapping an end portion of the charge holding unit light shielding film in a light receiving face view.

公开(公告)号：US20240251181A1

公开(公告)日：2024-07-25

申请号：US18602787

申请日：2024-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Korea University Research and Business Foundation

Inventor： Suyeon Lee ,  Q-Han Park ,  Unjeong Kim ,  Hyunjun Ma

IPC: H04N25/62 ,  H04N9/67

CPC classification number: H04N25/62 ,  H04N9/67

Abstract: Provided are a method and a device, for processing spectrum data of an image sensor. The method includes obtaining spectrum response signals corresponding to channels of spectrum data of light, the spectrum data being obtained from an object by an image sensor; determining a set of bases corresponding to the obtained spectrum response signals; performing, based on the determined set of bases, a change of basis on at least one basis included in the determined set of bases; and generating, by using a pseudo inverse, reconstructed spectrum data from the spectrum response signals on which the change of basis has been performed.

公开(公告)号：US20240171866A1

公开(公告)日：2024-05-23

申请号：US18298242

申请日：2023-04-10

Applicant: SK hynix Inc.

Inventor： Jun Hyeok CHOI ,  Dae Hyun LEE

IPC: H04N23/81 ,  H04N23/84 ,  H04N25/10 ,  H04N25/62

CPC classification number: H04N23/81 ,  H04N23/84 ,  H04N25/10 ,  H04N25/62

Abstract: An image processing device includes a memory for storing reference color ratios and crosstalk values of each of light source images acquired by sensing light sources having different wavelengths. The image processing device also includes a processor for receiving an image including a plurality of regions each including outer pixel values and inner pixel values of the same color, and correcting the outer pixel values or the inner pixel values by using difference values between the respective reference color ratios and a color ratio of the image as weights of the crosstalk values.

公开(公告)号：US11765474B2

公开(公告)日：2023-09-19

申请号：US17818938

申请日：2022-08-10

Applicant: ams Sensors USA Inc. ,  ams Sensors Belgium BVBA

Inventor： Denver Lloyd ,  Adi Xhakoni ,  Scott Johnson

IPC: H04N25/59 ,  H04N25/778 ,  H04N25/75 ,  H04N25/531 ,  H04N25/585 ,  H04N25/62 ,  H04N25/583 ,  H01L27/146

CPC classification number: H04N25/59 ,  H01L27/14612 ,  H01L27/14643 ,  H04N25/531 ,  H04N25/583 ,  H04N25/585 ,  H04N25/62 ,  H04N25/75 ,  H04N25/778

Abstract: In an embodiment a pixel arrangement includes at least one photodiode configured to convert electromagnetic radiation into a respective charge signal, a transfer gate between the photodiode and a capacitance for transferring the respective charge signal to the capacitance, a reset gate electrically coupled to the capacitance, the reset gate configured to reset the capacitance, an amplifier electrically connected to the capacitance and configured to generate, based on the respective charge signal and on a sensitivity mode, a respective amplified signal being a low sensitivity signal or a high sensitivity signal, respectively, wherein the low sensitivity signal and the high sensitivity signal are based on a common noise level, a first capacitor configured to store the high sensitivity signal, a second capacitor configured to store the low sensitivity signal, a first switch between an output terminal of the amplifier and the first capacitor and a second switch between the output terminal of the amplifier and the second capacitor.

公开(公告)号：US20250056910A1

公开(公告)日：2025-02-13

申请号：US18718507

申请日：2022-10-24

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： MASATAKA ISHIDA ,  HARUMI TANAKA

IPC: H01L27/146 ,  H04N25/532 ,  H04N25/62 ,  H04N25/77

Abstract: [Problem] To provide an imaging element in which generation of optical noise is suppressed. [Solution] An imaging element 10 includes a semiconductor substrate 101, a photoelectric conversion portion PD disposed in the semiconductor substrate 101, a charge holding portion MEM disposed in the semiconductor substrate 101, a gate 130 of a transfer transistor TRX, TRY, or TRG arranged on a region of a bottom surface 101A of the semiconductor substrate 101, the region overlapping the charge holding portion MEM, a sidewall 131 formed around the gate 130, and an in-substrate-shielding portion 112 that is a light-shielding portion disposed in a boundary region of a sensor pixel 50 in the semiconductor substrate 101 to extend like a wall from a light-receiving surface 101B of the semiconductor substrate 101toward the bottom surface 101A side. The in-substrate-shielding portion 112 has a penetrating portion 112A that penetrates the semiconductor substrate 101 and is in contact with the sidewall 130 at the penetrating portion 112A.

公开(公告)号：US20240334081A1

公开(公告)日：2024-10-03

申请号：US18578911

申请日：2022-03-16

Applicant: Sony Semiconductor Solutions Corporation

Inventor： Kazumasa Hirano ,  Kazuhiro Itani ,  Sumie Tanoue ,  Shigeru Kanematsu

IPC: H04N25/62 ,  H04N25/77

CPC classification number: H04N25/62 ,  H04N25/77

Abstract: Imaging elements and imaging devices that reduce leakage of electric charges in a photoelectric conversion unit are disclosed. In one example, an imaging element includes photoelectric conversion units for generating an image signal corresponding to incident light. A charge retaining unit receives and retains sequentially transferred electric charges from the photoelectric conversion units. Charge transfer units are disposed for each of the photoelectric conversion units and transfer the electric charges to the charge retaining unit. Charge transfer signal lines are capacitively coupled to the charge retaining unit and are respectively connected to the charge transfer units to transmit a control signal. The charge transfer signal line connected to an earliest charge transfer unit that transfers the electric charges earliest in an image signal generation period is configured to have higher capacitance in the capacitive coupling than the other charge transfer signal lines.

公开(公告)号：US12096140B2

公开(公告)日：2024-09-17

申请号：US17818962

申请日：2022-08-10

Applicant: ams Sensors USA Inc. ,  ams Sensors Belgium BVBA

Inventor： Denver Lloyd ,  Adi Xhakoni ,  Scott Johnson

IPC: H04N25/59 ,  H01L27/146 ,  H04N25/531 ,  H04N25/583 ,  H04N25/585 ,  H04N25/62 ,  H04N25/75 ,  H04N25/778

CPC classification number: H04N25/59 ,  H01L27/14612 ,  H01L27/14643 ,  H04N25/531 ,  H04N25/583 ,  H04N25/585 ,  H04N25/62 ,  H04N25/75 ,  H04N25/778

Abstract: In an embodiment a pixel arrangement includes a photodetector configured to accumulate charge carriers by converting electromagnetic radiation, a transfer transistor electrically coupled to the photodetector, a diffusion node electrically coupled to the transfer transistor, a reset transistor electrically coupled to the diffusion node and to a pixel supply voltage and a sample-and-hold stage including at least a first capacitor and a second capacitor, an input of the sample-and-hold stage being electrically coupled to the diffusion node via an amplifier, wherein the transfer transistor is configured to be pulsed to different voltage levels for transferring parts of the accumulated charge carriers to the diffusion node, wherein at least the second capacitor is configured to store a low conversion gain signal representing a first part of the accumulated charge carriers, and wherein the first capacitor is configured to store a high conversion gain signal representing a remaining part of the accumulated charge carriers.

公开(公告)号：US20240292124A1

公开(公告)日：2024-08-29

申请号：US18437342

申请日：2024-02-09

Applicant: CANON KABUSHIKI KAISHA

Inventor： KAN TAKAIWA ,  AIHIKO NUMATA

IPC: H04N25/62 ,  H01L27/146 ,  H04N25/13 ,  H04N25/79

CPC classification number: H04N25/62 ,  H04N25/134 ,  H04N25/79 ,  H01L27/14645

Abstract: An imaging device includes: a photoelectric conversion element including an avalanche photodiode; a generation unit configured to generate an image based on a signal acquired by the photoelectric conversion element; a first correction unit configured to correct the image based on first characteristic information on crosstalk between pixels of the photoelectric conversion element; and a second correction unit configured to perform pixel interpolation of the image based on second characteristic information for determining a crosstalk region to neighboring pixels of a specific pixel and the image.