公开(公告)号：US20240303410A1

公开(公告)日：2024-09-12

申请号：US18670009

申请日：2024-05-21

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jisu Yu ,  Jaeho Park ,  Sanghoon Baek ,  Hyeongyu You ,  Seungyoung Lee ,  Seungman Lim

IPC分类号： G06F30/392 ,  G06F30/3953 ,  G06F30/398 ,  G06F117/12 ,  H01L23/528 ,  H01L29/423

CPC分类号： G06F30/392 ,  G06F30/3953 ,  G06F30/398 ,  H01L23/5283 ,  H01L23/5286 ,  H01L29/42376 ,  G06F2117/12

摘要： A method includes placing standard cells based on a standard cell library and generating layout data, and placing a filler cell selected from among a first type filler cell and a second type filler cell by using the layout data. The filler cell is placed based on a density of a pattern formed in the standard cell. The standard cell library includes data defining the first and second type filler cells. A density of a contact formed on an active region of the second type filler cell to contact the active region of the second type filler cell is lower than a density of a contact formed on an active region of a first type filler cell to contact the active region of the first type filler cell.

公开(公告)号：US12019965B2

公开(公告)日：2024-06-25

申请号：US17225773

申请日：2021-04-08

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jisu Yu ,  Jaeho Park ,  Sanghoon Baek ,  Hyeongyu You ,  Seungyoung Lee ,  Seungman Lim

IPC分类号： G06F30/392 ,  G06F30/3953 ,  G06F30/398 ,  H01L23/528 ,  H01L29/423 ,  G06F117/12

CPC分类号： G06F30/392 ,  G06F30/3953 ,  G06F30/398 ,  H01L23/5283 ,  H01L23/5286 ,  H01L29/42376 ,  G06F2117/12

摘要： A method includes placing standard cells based on a standard cell library and generating layout data, and placing a filler cell selected from among a first type filler cell and a second type filler cell by using the layout data. The filler cell is placed based on a density of a pattern formed in the standard cell. The standard cell library includes data defining the first and second type filler cells. A density of a contact formed on an active region of the second type filler cell to contact the active region of the second type filler cell is lower than a density of a contact formed on an active region of a first type filler cell to contact the active region of the first type filler cell.

公开(公告)号：US20210184038A1

公开(公告)日：2021-06-17

申请号：US16893549

申请日：2020-06-05

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Seungman Lim ,  Jaeho Park ,  Sanghoon Baek ,  Jisu YU ,  Hyeongyu You ,  Seungyoung Lee

IPC分类号： H01L29/78 ,  H01L23/522

摘要： A semiconductor device includes first and second active patterns, a first gate structure, first and second channels, and first and second source/drain layers. The first and second active patterns extend in a first direction, and are spaced apart in a second direction. The first gate structure extends in the second direction on the first and second active patterns. The first channels are spaced apart in a third direction on the first active pattern. The second channels are spaced apart in the third direction on the second active pattern. The first source/drain layer having a first conductivity type is formed at a side of the first gate structure to contact the first channels. The second source/drain layer having a second conductivity type is formed at a side of the first gate structure to contact the second channels. Widths in the second direction of the first and second channels are different.

公开(公告)号：US20210334449A1

公开(公告)日：2021-10-28

申请号：US17225773

申请日：2021-04-08

申请人： Samsung Electronics Co., Ltd.

发明人： Jisu Yu ,  Jaeho Park ,  Sanghoon Baek ,  Hyeongyu You ,  Seungyoung Lee ,  Seungman Lim

IPC分类号： G06F30/398 ,  H01L23/528 ,  H01L29/423 ,  G06F30/392 ,  G06F30/3953

摘要： A method includes placing standard cells based on a standard cell library and generating layout data, and placing a filler cell selected from among a first type filler cell and a second type filler cell by using the layout data. The filler cell is placed based on a density of a pattern formed in the standard cell. The standard cell library includes data defining the first and second type filler cells. A density of a contact formed on an active region of the second type filler cell to contact the active region of the second type filler cell is lower than a density of a contact formed on an active region of a first type filler cell to contact the active region of the first type filler cell.

公开(公告)号：US10884556B2

公开(公告)日：2021-01-05

申请号：US16028754

申请日：2018-07-06

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Chang-Ju Lee ,  Jaeho Park ,  YoonKyung Choi

IPC分类号： G06F3/045 ,  G06F3/044 ,  G09G3/36 ,  G06F3/041 ,  G09G3/3266 ,  G06F3/0488 ,  G09G3/20

摘要： Embodiments relate to a gate driving integrated circuit and an operating method thereof operating in a time-division method divided into a display period and a touch period. The gate driving integrated circuit includes a charging circuit, a gate control circuit, and a discharging circuit. The charging circuit charges a memory element. The discharging circuit discharges the memory element. The gate control circuit outputs a gate-on voltage to a gate line based on the charged memory element in during display period. The gate control circuit electrically disconnects the memory element from the gate control circuit during the touch period.