- 专利标题： SEMICONDUCTOR DEVICES
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申请号： US16893549申请日： 2020-06-05
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公开(公告)号： US20210184038A1公开(公告)日： 2021-06-17
- 发明人: Seungman Lim , Jaeho Park , Sanghoon Baek , Jisu YU , Hyeongyu You , Seungyoung Lee
- 申请人： SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2019-0166585 20191213
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L23/522
摘要：
A semiconductor device includes first and second active patterns, a first gate structure, first and second channels, and first and second source/drain layers. The first and second active patterns extend in a first direction, and are spaced apart in a second direction. The first gate structure extends in the second direction on the first and second active patterns. The first channels are spaced apart in a third direction on the first active pattern. The second channels are spaced apart in the third direction on the second active pattern. The first source/drain layer having a first conductivity type is formed at a side of the first gate structure to contact the first channels. The second source/drain layer having a second conductivity type is formed at a side of the first gate structure to contact the second channels. Widths in the second direction of the first and second channels are different.
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