公开(公告)号：US20240153851A1

公开(公告)日：2024-05-09

申请号：US18406602

申请日：2024-01-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JAEWON HWANG ,  Kwangjin Moon ,  Hojin Lee ,  Hyungjun Jeon

IPC: H01L23/485 ,  H01L23/00 ,  H01L23/48 ,  H01L23/535

CPC classification number: H01L23/485 ,  H01L23/481 ,  H01L23/535 ,  H01L24/29 ,  H01L24/45

Abstract: A semiconductor device includes a semiconductor substrate having a first surface adjacent to an active layer; a first insulating layer disposed on the first surface of the semiconductor substrate; a second insulating layer disposed on the first insulating layer; an etch stop structure interposed between the first insulating layer and the second insulating layer and including a plurality of etch stop layers; a contact wiring pattern disposed inside the second insulating layer and surrounded by at least one etch stop layer of the plurality of etch stop layers; and a through electrode structure configured to pass through the semiconductor substrate, the first insulating layer, and at least one etch stop layer of the plurality of etch stop layers in a vertical direction and contact the contact wiring pattern.

公开(公告)号：US20230335467A1

公开(公告)日：2023-10-19

申请号：US18341087

申请日：2023-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUBIN SEO ,  KWANGJIN MOON ,  KUNSANG PARK ,  MYUNGJOO PARK ,  SUJEONG PARK ,  JAEWON HWANG

IPC: H01L23/48 ,  H01L23/498 ,  H01L23/538 ,  H01L23/00 ,  H01L25/065 ,  H01L23/522 ,  H01L23/532 ,  H01L23/528

CPC classification number: H01L23/481 ,  H01L23/49838 ,  H01L23/5384 ,  H01L23/5386 ,  H01L24/08 ,  H01L24/16 ,  H01L25/0652 ,  H01L25/0657 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/5283 ,  H01L23/5286 ,  H01L23/49816 ,  H01L2225/06548 ,  H01L2224/16146 ,  H01L2224/16147 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/08146 ,  H01L2224/08147 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06544

Abstract: A semiconductor device includes a semiconductor substrate having a first surface and a second surface, which are opposite to each other, an active pattern protruding from the first surface of the semiconductor substrate, the active pattern including a source/drain region, a power rail electrically connected to the source/drain region, a power delivery network disposed on the second surface of the semiconductor substrate, and a penetration via structure penetrating the semiconductor substrate and electrically connected to the power rail and the power delivery network. The penetration via structure includes a first conductive pattern electrically connected to the power rail and a second conductive pattern electrically connected to the power delivery network. The first conductive pattern includes a material different from the second conductive pattern.

公开(公告)号：US20220037236A1

公开(公告)日：2022-02-03

申请号：US17316970

申请日：2021-05-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUBIN SEO ,  KWANGJIN MOON ,  KUNSANG PARK ,  MYUNGJOO PARK ,  SUJEONG PARK ,  JAEWON HWANG

IPC: H01L23/48 ,  H01L23/498 ,  H01L23/538 ,  H01L23/00 ,  H01L25/065 ,  H01L23/522 ,  H01L23/532 ,  H01L23/528

Abstract: A semiconductor device includes a semiconductor substrate having a first surface and a second surface, which are opposite to each other, an active pattern protruding from the first surface of the semiconductor substrate, the active pattern including a source/drain region, a power rail electrically connected to the source/drain region, a power delivery network disposed on the second surface of the semiconductor substrate, and a penetration via structure penetrating the semiconductor substrate and electrically connected to the power rail and the power delivery network. The penetration via structure includes a first conductive pattern electrically connected to the power rail and a second conductive pattern electrically connected to the power delivery network. The first conductive pattern includes a material different from the second conductive pattern.

公开(公告)号：US20210351112A1

公开(公告)日：2021-11-11

申请号：US17381287

申请日：2021-07-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： MYUNGJOO PARK ,  JAEWON HWANG ,  KWANGJIN MOON ,  KUNSANG PARK

IPC: H01L23/48 ,  H01L23/538 ,  H01L21/48 ,  H01L23/00

Abstract: A semiconductor device and a method of manufacturing the semiconductor device are disclosed. The semiconductor device includes a substrate, a first through substrate via configured to penetrate at least partially through the substrate, the first through substrate via having a first aspect ratio, and a second through substrate via configured to penetrate at least partially through the substrate. The second through substrate via has a second aspect ratio greater than the first aspect ratio, and each of the first through substrate via and the second through substrate via includes a first conductive layer and a second conductive layer. A thickness in a vertical direction of the first conductive layer of the first through substrate via is less than a thickness in the vertical direction of the first conductive layer of the second through substrate via.