公开(公告)号：US20230086157A1

公开(公告)日：2023-03-23

申请号：US17722780

申请日：2022-04-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woohyun KANG ,  Youngdeok SEO ,  Hyuna KIM ,  Hyunkyo OH ,  Donghoo LIM

IPC: G06F3/06

Abstract: Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes outputting a first command including a request for on-chip valley search (OVS) count data of a memory region of the non-volatile memory device to the non-volatile memory device, wherein the OVS count data includes a first count value and a second count value of a first read voltage and a third count value and a fourth count value of a second read voltage, receiving the OVS count data from the non-volatile memory device, determining a distribution type of the memory region to be a predicted distribution type, from among a plurality of distribution types, based on the OVS count data, and determining a subsequent operation, based on the predicted distribution type.

公开(公告)号：US20230187002A1

公开(公告)日：2023-06-15

申请号：US17893476

申请日：2022-08-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyuna KIM ,  Woohyun KANG ,  Youngdeok SEO ,  Hyunkyo OH ,  Donghoo LIM

IPC: G11C16/34 ,  G11C16/26

CPC classification number: G11C16/3495 ,  G11C16/3404 ,  G11C16/26

Abstract: Disclosed is a storage controller which includes a history table and communicates with a non-volatile memory device. A method of operating the storage controller includes determining whether history data of a target memory block are registered at the history table, providing a history read request for the target memory block based on the history data when it is determined that the history data are registered, receiving first raw data corresponding to the history read request from the non-volatile memory device, generating skew information of the target memory block based on the first raw data and the history data, and determining whether to perform a read reclaim operation of the target memory block, based on the skew information.

公开(公告)号：US20220326884A1

公开(公告)日：2022-10-13

申请号：US17518770

申请日：2021-11-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woohyun KANG ,  Hyuna KIM ,  Minkyu KIM ,  Donghoo LIM ,  Sanghyun CHOI

IPC: G06F3/06 ,  G06F13/28 ,  G11C16/04 ,  G11C16/26 ,  G11C16/14 ,  G06F11/10

Abstract: A storage controller communicates with a non-volatile memory device, and an operation method of the storage controller includes determining whether a first read voltage is registered at a history table, when it is determined that the first read voltage is registered at the history table, performing a first direct memory access (DMA) read operation on data stored in the non-volatile memory device, based on the first read voltage, obtaining a page count value, based on the first DMA read operation, determining a second read voltage different from the first read voltage based on a difference between the page count value and an idle count value, without an additional read operation for the data stored in the non-volatile memory device, and updating the first read voltage of the history table based on the second read voltage.

公开(公告)号：US20220310168A1

公开(公告)日：2022-09-29

申请号：US17511738

申请日：2021-10-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woohyun KANG ,  Hyuna KIM ,  Minkyu KIM ,  Donghyub KANG

IPC: G11C16/10 ,  G11C16/26 ,  G11C16/30 ,  G11C16/32 ,  G11C29/42 ,  G06N20/00

Abstract: A method of operating a storage controller that communicates with a non-volatile memory device includes performing a first direct memory access (DMA) read operation on data stored in the non-volatile memory device, based on a first read voltage; updating a page count value of a DMA register, based on the first DMA read operation; determining whether data read by the first DMA read operation include an uncorrectable error; when it is determined that the data read by the first DMA read operation include the uncorrectable error, determining a second read voltage different from the first read voltage, based on the updated page count value of the DMA register, without an additional read operation on the data stored in the non-volatile memory device; and performing a second DMA read operation on the data stored in the non-volatile memory device, based on the second read voltage.