公开(公告)号：US09793291B2

公开(公告)日：2017-10-17

申请号：US15142365

申请日：2016-04-29

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Hyun-Jin Shin ,  Hong-Suk Kim ,  Jung-Hwan Kim ,  Sang-Hoon Lee ,  Hun-Hyeong Lim ,  Yong-Seok Cho ,  Young-Dae Kim ,  Han-Vit Yang

IPC分类号： H01L21/336 ,  H01L27/11582 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/02 ,  H01L21/28 ,  H01L27/11521 ,  H01L27/11568 ,  H01L21/768

CPC分类号： H01L27/11582 ,  H01L21/0206 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/76826 ,  H01L21/76831 ,  H01L27/11521 ,  H01L27/11568

摘要： A method of manufacturing a semiconductor device, the method including forming a structure on a substrate, the structure including a metal pattern, at least a portion of the metal pattern being exposed; forming a preliminary buffer oxide layer to cover the structure, a metal oxide layer being formed at the exposed portion of the metal pattern; and deoxidizing the metal oxide layer so that the preliminary buffer oxide layer is transformed into a buffer oxide layer.

公开(公告)号：US09905664B2

公开(公告)日：2018-02-27

申请号：US15604646

申请日：2017-05-24

申请人： Samsung Electronics Co., Ltd.

发明人： Hyun Namkoong ,  Dong-Kyum Kim ,  Jung-Hwan Kim ,  Jung Geun Jee ,  Han-Vit Yang ,  Ji-Man Yoo

IPC分类号： H01L29/792 ,  H01L21/336 ,  H01L29/423 ,  H01L21/28 ,  H01L29/66 ,  H01L29/788 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11565 ,  H01L27/11582

CPC分类号： H01L29/42328 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11565 ,  H01L27/11582 ,  H01L29/42324 ,  H01L29/42344 ,  H01L29/66825 ,  H01L29/7881 ,  H01L29/7926

摘要： A semiconductor device includes a substrate, a tunnel insulation pattern on the substrate, a charge storage pattern on the tunnel insulation pattern, a dielectric pattern having a width smaller than a width of the charge storage pattern on the charge storage pattern, a control gate having a width greater than the width of the dielectric pattern on the dielectric pattern, and a metal-containing gate on the control gate.