公开(公告)号：US20150137320A1

公开(公告)日：2015-05-21

申请号：US14538046

申请日：2014-11-11

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： JUNG-HWAN KIM ,  HUN-HYEOUNG LEAM ,  TAE-HYUN KIM ,  SEOK-WOO NAM ,  HYUN NAMKOONG ,  YONG-SEOK KIM ,  TEA-KWANG YU

IPC分类号： H01L29/06 ,  H01L29/78

CPC分类号： H01L29/785 ,  H01L21/28282 ,  H01L21/308 ,  H01L21/76224 ,  H01L21/76232 ,  H01L21/823481 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/1079 ,  H01L29/42352 ,  H01L29/66818 ,  H01L29/66833 ,  H01L29/7851 ,  H01L29/7854 ,  H01L2029/7858

摘要： A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.

摘要翻译： 半导体器件包括限定形成在半导体衬底中的有源区的隔离层。 在隔离层上执行第一凹陷处理以暴露活性区域的边缘部分。 执行第一舍入处理以围绕活动区域的边缘部分。 在隔离层上进行第二凹陷处理。 执行第二舍入处理以围绕活动区域的边缘部分。

公开(公告)号：US20170033225A1

公开(公告)日：2017-02-02

申请号：US15290269

申请日：2016-10-11

申请人： Samsung Electronics Co., Ltd.

发明人： JUNG-HWAN KIM ,  HUN-HYEOUNG LEAM ,  TAE-HYUN KIM ,  SEOK-WOO NAM ,  HYUN NAMKOONG ,  YONG-SEOK KIM ,  TEA-KWANG YU

IPC分类号： H01L29/78 ,  H01L27/115 ,  H01L29/66 ,  H01L21/762 ,  H01L21/308

CPC分类号： H01L29/785 ,  H01L21/28282 ,  H01L21/308 ,  H01L21/76224 ,  H01L21/76232 ,  H01L21/823481 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/1079 ,  H01L29/42352 ,  H01L29/66818 ,  H01L29/66833 ,  H01L29/7851 ,  H01L29/7854 ,  H01L2029/7858

摘要： A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.

摘要翻译： 半导体器件包括限定形成在半导体衬底中的有源区的隔离层。 在隔离层上执行第一凹陷处理以暴露活性区域的边缘部分。 执行第一舍入处理以围绕活动区域的边缘部分。 在隔离层上进行第二凹陷处理。 执行第二舍入处理以围绕活动区域的边缘部分。

公开(公告)号：US20150179799A1

公开(公告)日：2015-06-25

申请号：US14635034

申请日：2015-03-02

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： JUNG-HWAN KIM ,  HUN-HYEOUNG LEAM ,  TAE-HYUN KIM ,  SEOK-WOO NAM ,  HYUN NAMKOONG ,  YONG-SEOK KIM ,  TEA-KWANG YU

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/10

CPC分类号： H01L29/785 ,  H01L21/28282 ,  H01L21/308 ,  H01L21/76224 ,  H01L21/76232 ,  H01L21/823481 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/1079 ,  H01L29/42352 ,  H01L29/66818 ,  H01L29/66833 ,  H01L29/7851 ,  H01L29/7854 ,  H01L2029/7858

摘要： A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.