公开(公告)号：US20220190134A1

公开(公告)日：2022-06-16

申请号：US17460446

申请日：2021-08-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEO JIN JEONG ,  Do Hyun GO ,  Seok Hoon KIM ,  Jung Taek KIM ,  Pan Kwi PARK ,  Moon Seung YANG ,  Min-Hee CHOI ,  Ryong HA

IPC: H01L29/423 ,  H01L29/786 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417

Abstract: A semiconductor device includes an active pattern including a lower pattern and a plurality of sheet patterns; a gate structure disposed on the lower pattern and surrounding the plurality of sheet patterns; and a source/drain pattern filling a source/drain recess formed on one side of the gate structure. The source/drain pattern includes a first semiconductor pattern extending along the source/drain recess and contacting the lower pattern, a second and third semiconductor patterns sequentially disposed on the first semiconductor pattern, a lower surface of the third semiconductor pattern is disposed below a lower surface of a lowermost sheet pattern, a side surface of the third semiconductor pattern includes a planar portion, and a thickness of the second semiconductor pattern on the lower surface of the third semiconductor pattern is different from a thickness of the second semiconductor pattern on the planar portion of the side surface of the third semiconductor pattern.

公开(公告)号：US20240297234A1

公开(公告)日：2024-09-05

申请号：US18661171

申请日：2024-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seo Jin JEONG ,  Do Hyun GO ,  Seok Hoon KIM ,  Jung Taek KIM ,  Pan Kwi PARK ,  Moon Seung YANG ,  Min-Hee CHOI ,  Ryong HA

IPC: H01L29/423 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/786

CPC classification number: H01L29/42392 ,  H01L29/0665 ,  H01L29/0847 ,  H01L29/41775 ,  H01L29/78696

Abstract: A semiconductor device includes an active pattern including a lower pattern and a plurality of sheet patterns; a gate structure disposed on the lower pattern and surrounding the plurality of sheet patterns; and a source/drain pattern filling a source/drain recess formed on one side of the gate structure. The source/drain pattern includes a first semiconductor pattern extending along the source/drain recess and contacting the lower pattern, a second and third semiconductor patterns sequentially disposed on the first semiconductor pattern, a lower surface of the third semiconductor pattern is disposed below a lower surface of a lowermost sheet pattern, a side surface of the third semiconductor pattern includes a planar portion, and a thickness of the second semiconductor pattern on the lower surface of the third semiconductor pattern is different from a thickness of the second semiconductor pattern on the planar portion of the side surface of the third semiconductor pattern.

公开(公告)号：US20230378335A1

公开(公告)日：2023-11-23

申请号：US18076639

申请日：2022-12-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Keun LIM ,  Hyo Hoon BYEON ,  Do Hyun GO ,  Un Ki KIM ,  Yu Yeong JO ,  Jin Yeong CHO

IPC: H01L29/775 ,  H01L29/06 ,  H01L29/16 ,  H01L29/165 ,  H01L29/423 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/775 ,  H01L29/0673 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/42392 ,  H01L21/02603 ,  H01L21/02529 ,  H01L21/02532 ,  H01L29/66068

Abstract: The present disclosure provides a semiconductor device with a multi-bridge channel field effect transistor. In some embodiments, a semiconductor device includes a substrate, an active pattern that extends in a first horizontal direction on the substrate, a first nanosheet, a second nanosheet, and a gate electrode. The first nanosheet is spaced apart from the active pattern in a vertical direction, and includes a first layer, a second layer disposed on and in contact with the first layer, and a third layer disposed on and in contact with the second layer. The first and third layers include a first material, and the second layer includes a different second material. The second nanosheet is disposed on the first nanosheet and spaced apart from the first nanosheet in the vertical direction. The gate electrode extends in a second horizontal direction on the active pattern and surrounds the first and second nanosheets.