公开(公告)号：US20230378335A1

公开(公告)日：2023-11-23

申请号：US18076639

申请日：2022-12-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Keun LIM ,  Hyo Hoon BYEON ,  Do Hyun GO ,  Un Ki KIM ,  Yu Yeong JO ,  Jin Yeong CHO

IPC: H01L29/775 ,  H01L29/06 ,  H01L29/16 ,  H01L29/165 ,  H01L29/423 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/775 ,  H01L29/0673 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/42392 ,  H01L21/02603 ,  H01L21/02529 ,  H01L21/02532 ,  H01L29/66068

Abstract: The present disclosure provides a semiconductor device with a multi-bridge channel field effect transistor. In some embodiments, a semiconductor device includes a substrate, an active pattern that extends in a first horizontal direction on the substrate, a first nanosheet, a second nanosheet, and a gate electrode. The first nanosheet is spaced apart from the active pattern in a vertical direction, and includes a first layer, a second layer disposed on and in contact with the first layer, and a third layer disposed on and in contact with the second layer. The first and third layers include a first material, and the second layer includes a different second material. The second nanosheet is disposed on the first nanosheet and spaced apart from the first nanosheet in the vertical direction. The gate electrode extends in a second horizontal direction on the active pattern and surrounds the first and second nanosheets.