公开(公告)号：US20250159868A1

公开(公告)日：2025-05-15

申请号：US18783044

申请日：2024-07-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Selyung Yoon ,  Daehyeon Kwon ,  Donggeon Kim ,  Bok-Yeon Won

IPC: H10B12/00 ,  H01L23/522

Abstract: A semiconductor device includes a substrate, a transistor on the substrate, a bit line structure electrically connected to the transistor, a channel layer on the bit line structure, a gate structure intersecting the bit line structure, a first conductive line electrically connecting the transistor and the bit line structure, an upper shield line overlapping the first conductive line, and side shield lines spaced apart from each other with the first conductive line interposed therebetween. The upper shield line and the side shield lines are electrically separated from the first conductive line and the bit line structure.

公开(公告)号：US20250085858A1

公开(公告)日：2025-03-13

申请号：US18591238

申请日：2024-02-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donggeon Kim ,  Myeongsik Ryu ,  Bokyeon Won ,  Seokjae Lee ,  Daehyeon Kwon ,  Kyoungmin Kim ,  Inseok Baek ,  Selyung Yoon

IPC: G06F3/06

Abstract: A bit-line sense amplifier includes an amplifying circuit, an isolation circuit, an offset cancellation circuit and an equalizer. The amplifying circuit is connected to a bit-line and a complementary bit-line, senses a voltage difference between the bit-line and the complementary bit-line based on a first control signal and a second control signal, and adjusts a voltage of a sensing bit-line and a complementary sensing bit-line based on the voltage difference. The equalizer is connected to the sensing bit-line, and equalizes the bit-line and the complementary bit-line to a precharge voltage, based on an equalizing signal. The equalizer includes an equalizing transistor that has a source, a gate configured to receive the equalizing signal, and a drain. The source of the equalizing transistor is connected to a wiring structure through a direct contact, and the wiring structure is configured to receive the precharge voltage.