公开(公告)号：US10396205B2

公开(公告)日：2019-08-27

申请号：US15951385

申请日：2018-04-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Mun-hyeon Kim ,  Sung-man Whang ,  Chang-woo Noh ,  Dong-won Kim ,  Han-su Oh

IPC: H01L27/12 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8232

Abstract: An integrated circuit device includes a base burying insulating film covering a lower side wall of a fin-type active region on a substrate, an isolation pattern having a top surface higher than a top surface of the base burying insulating film, and a gate line covering a channel section of the fin-type active region. The gate line has an upper gate covering an upper portion of the channel section and a lower gate protruding from the upper gate toward the substrate and filling a space between a lower side wall of the channel section and an upper side wall of the isolation pattern.

公开(公告)号：US11742411B2

公开(公告)日：2023-08-29

申请号：US17224609

申请日：2021-04-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang-woo Noh ,  Myung-gil Kang ,  Ho-jun Kim ,  Geum-jong Bae ,  Dong-il Bae

IPC: H01L21/02 ,  H01L21/762 ,  H01L29/78 ,  H01L29/165 ,  H01L21/768 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/66545 ,  H01L21/02603 ,  H01L21/76224 ,  H01L21/76802 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/42356 ,  H01L29/7846 ,  H01L29/7848

Abstract: A semiconductor device according to an example embodiment includes a substrate extending in first and second directions intersecting with each other; nanowires on the substrate and spaced apart from each other in the second direction; gate electrodes extending in the first direction and spaced apart from each other in the second direction, and surrounding the nanowires to be superimposed vertically with the nanowires; external spacers on the substrate and covering sidewalls of the gate electrodes on the nanowires; and an isolation layer between the gate electrodes and extending in the first direction, wherein an upper surface of the isolation layer is flush with upper surfaces of the gate electrodes.

公开(公告)号：US10978299B2

公开(公告)日：2021-04-13

申请号：US16361914

申请日：2019-03-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang-woo Noh ,  Myung-gil Kang ,  Ho-jun Kim ,  Geum-jong Bae ,  Dong-il Bae

IPC: H01L21/02 ,  H01L21/762 ,  H01L21/768 ,  H01L29/165 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423

Abstract: A semiconductor device according to an example embodiment includes a substrate extending in first and second directions intersecting with each other; nanowires on the substrate and spaced apart from each other in the second direction; gate electrodes extending in the first direction and spaced apart from each other in the second direction, and surrounding the nanowires to be superimposed vertically with the nanowires; external spacers on the substrate and covering sidewalls of the gate electrodes on the nanowires; and an isolation layer between the gate electrodes and extending in the first direction, wherein an upper surface of the isolation layer is flush with upper surfaces of the gate electrodes.